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公开(公告)号:US20210054504A1
公开(公告)日:2021-02-25
申请号:US16996886
申请日:2020-08-18
Applicant: ASM IP Holding B.V.
Inventor: Hua Feng Wang , Yozo Ikedo
IPC: C23C16/448 , C23C16/40 , C23C16/52
Abstract: There is provided a film-forming material mixed-gas forming device including: a film-forming material supply unit that supplies a film-forming material in liquid form at a predetermined flow rate; a carrier gas supply unit that supplies a carrier gas at a predetermined flow rate; a main vaporization unit that vaporizes the film-forming material by heating the film-forming material supplied from the film-forming material supply unit and the carrier gas supplied from the carrier gas supply unit; and an auxiliary vaporization unit having a porous vaporization member which captures carried over droplets of the film-forming material in gas flowing out from the main vaporization unit and vaporizes the captured droplets of the film-forming material.
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公开(公告)号:USD829306S1
公开(公告)日:2018-09-25
申请号:US29570199
申请日:2016-07-06
Applicant: ASM IP Holding B.V.
Designer: Yozo Ikedo , Takafumi Hisamitsu
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公开(公告)号:USD864134S1
公开(公告)日:2019-10-22
申请号:US29667702
申请日:2018-10-24
Applicant: ASM IP Holding B.V.
Designer: Toshiharu Watarai , Yozo Ikedo , Takuya Suguri
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公开(公告)号:US10526704B2
公开(公告)日:2020-01-07
申请号:US14609758
申请日:2015-01-30
Applicant: ASM IP Holding B.V.
Inventor: Yuya Nonaka , Yozo Ikedo
IPC: C23C16/00 , C23C16/455 , C23C16/50
Abstract: A film forming apparatus includes a chamber having a processing space, a stage provided in the processing space and having a substrate placed thereon, a diffusion tube connected to the chamber so that a diffusion space communicating with the processing space is provided right above the stage, and a gas supply tube extending from the outside of the diffusion tube into the diffusion space through a portion of the diffusion tube and having a gas supply orifice in a portion thereof inside of the diffusion space. The gas supply orifice is formed so as to eject a material gas in a direction away from the stage.
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公开(公告)号:US11639548B2
公开(公告)日:2023-05-02
申请号:US16996886
申请日:2020-08-18
Applicant: ASM IP Holding B.V.
Inventor: Hua Feng Wang , Yozo Ikedo
IPC: C23C16/448 , C23C16/52 , C23C16/40
Abstract: There is provided a film-forming material mixed-gas forming device including: a film-forming material supply unit that supplies a film-forming material in liquid form at a predetermined flow rate; a carrier gas supply unit that supplies a carrier gas at a predetermined flow rate; a main vaporization unit that vaporizes the film-forming material by heating the film-forming material supplied from the film-forming material supply unit and the carrier gas supplied from the carrier gas supply unit; and an auxiliary vaporization unit having a porous vaporization member which captures carried over droplets of the film-forming material in gas flowing out from the main vaporization unit and vaporizes the captured droplets of the film-forming material.
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公开(公告)号:US10435789B2
公开(公告)日:2019-10-08
申请号:US15370834
申请日:2016-12-06
Applicant: ASM IP Holding B.V.
Inventor: Naoto Tsuji , Takuya Suguri , Yozo Ikedo
IPC: H01L21/00 , C23C16/00 , C23C16/50 , H01J37/00 , H01L21/683 , C23C16/503
Abstract: A substrate treatment apparatus includes a lower electrode, an upper electrode, a first AC power supply that is connected to the upper electrode and supplies AC power at a first frequency, a second AC power supply that is connected to the upper electrode and supplies AC power at a second frequency which is lower than the first frequency, an internal electrode provided in the lower electrode, a filter circuit connected to the internal electrode, and a DC power supply connected to the internal electrode via the filter circuit. The filter circuit includes a first filter circuit that becomes low impedance with respect to AC power at the first frequency compared to AC power at the second frequency, and a second filter circuit that becomes low impedance with respect to AC power at the second frequency compared to AC power at the first frequency.
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