公开(公告)号：US20170316940A1

公开(公告)日：2017-11-02

申请号：US15650686

申请日：2017-07-14

申请人： ASM IP Holding B.V.

发明人： Dai Ishikawa ,  Atsuki Fukazawa ,  Toshiharu Watarai

IPC分类号： H01L21/033 ,  H01L21/02 ,  H01L21/311

CPC分类号： H01L21/0337 ,  C23C16/345 ,  C23C16/45536 ,  C23C16/45553 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0338 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144

摘要： A method of forming spacers for spacer-defined multiple pattering (SDMP), includes: depositing a pattern transfer film by PEALD on the entire patterned surface of a template using halogenated silane as a precursor and nitrogen as a reactant at a temperature of 200° C. or less, which pattern transfer film is a silicon nitride film; dry-etching the template using a fluorocarbon as an etchant, and thereby selectively removing a portion of the pattern transfer film formed on a top of a core material and a horizontal portion of the pattern transfer film while leaving the core material and a vertical portion of the pattern transfer film as a vertical spacer, wherein a top of the vertical spacer is substantially flat; and dry-etching the core material, whereby the template has a surface patterned by the vertical spacer on a underlying layer.

公开(公告)号：US10468251B2

公开(公告)日：2019-11-05

申请号：US15650686

申请日：2017-07-14

申请人： ASM IP Holding B.V.

发明人： Dai Ishikawa ,  Atsuki Fukazawa ,  Toshiharu Watarai

IPC分类号： H01L21/033 ,  H01L21/02 ,  H01L21/311 ,  H01L21/308 ,  C23C16/455 ,  C23C16/34

摘要： A method of forming spacers for spacer-defined multiple pattering (SDMP), includes: depositing a pattern transfer film by PEALD on the entire patterned surface of a template using halogenated silane as a precursor and nitrogen as a reactant at a temperature of 200° C. or less, which pattern transfer film is a silicon nitride film; dry-etching the template using a fluorocarbon as an etchant, and thereby selectively removing a portion of the pattern transfer film formed on a top of a core material and a horizontal portion of the pattern transfer film while leaving the core material and a vertical portion of the pattern transfer film as a vertical spacer, wherein a top of the vertical spacer is substantially flat; and dry-etching the core material, whereby the template has a surface patterned by the vertical spacer on a underlying layer.

公开(公告)号：US20170358482A1

公开(公告)日：2017-12-14

申请号：US15622510

申请日：2017-06-14

申请人： ASM IP HOLDING B.V.

发明人： Shang Chen ,  Toshiharu Watarai ,  Takahiro Onuma ,  Dai Ishikawa ,  Kunitoshi Namba

IPC分类号： H01L21/768 ,  H01L23/532 ,  H01L21/285

CPC分类号： H01L21/7685 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/32051 ,  H01L21/32055 ,  H01L21/76823 ,  H01L21/76826 ,  H01L21/76868 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/53266

摘要： Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.

公开(公告)号：USD864134S1

公开(公告)日：2019-10-22

申请号：US29667702

申请日：2018-10-24

申请人： ASM IP Holding B.V.

设计人： Toshiharu Watarai ,  Yozo Ikedo ,  Takuya Suguri

公开(公告)号：US10041166B2

公开(公告)日：2018-08-07

申请号：US15795768

申请日：2017-10-27

申请人： ASM IP Holding B.V.

发明人： Delphine Longrie ,  Antti Juhani Niskanen ,  Han Wang ,  Qi Xie ,  Jan Willem Maes ,  Shang Chen ,  Toshiharu Watarai ,  Takahiro Onuma ,  Dai Ishikawa ,  Kunitoshi Namba

IPC分类号： C23C16/02 ,  C23C16/455 ,  H01L21/285 ,  H01L21/768

CPC分类号： C23C16/02 ,  C23C16/06 ,  C23C16/345 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/56 ,  H01L21/28562 ,  H01L21/76826 ,  H01L21/76849 ,  H01L21/7685 ,  H01L21/76883

摘要： Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.

公开(公告)号：US09805974B1

公开(公告)日：2017-10-31

申请号：US15177198

申请日：2016-06-08

申请人： ASM IP Holding B.V.

发明人： Shang Chen ,  Toshiharu Watarai ,  Takahiro Onuma ,  Dai Ishikawa ,  Kunitoshi Namba

IPC分类号： H01L21/768 ,  H01L21/3205 ,  H01L23/532

CPC分类号： H01L21/7685 ,  C23C16/04 ,  C23C16/08 ,  C23C16/4404 ,  C23C16/45523 ,  H01L21/28562 ,  H01L21/32051 ,  H01L21/32055 ,  H01L21/76823 ,  H01L21/76826 ,  H01L21/76849 ,  H01L21/76883 ,  H01L23/53228 ,  H01L23/53266

摘要： Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.

公开(公告)号：US20200291511A1

公开(公告)日：2020-09-17

申请号：US16676017

申请日：2019-11-06

申请人： ASM IP Holding B.V.

发明人： Delphine Longrie ,  Antti Juhani Niskanen ,  Han Wang ,  Qi Xie ,  Jan Willem Maes ,  Shang Chen ,  Toshiharu Watarai ,  Takahiro Onuma ,  Dai Ishikawa ,  Kunitoshi Namba

IPC分类号： C23C16/02 ,  C23C16/06 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  C23C16/56 ,  H01L21/768 ,  H01L21/285

摘要： Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.

公开(公告)号：US10480064B2

公开(公告)日：2019-11-19

申请号：US16040844

申请日：2018-07-20

申请人： ASM IP Holding B.V.

发明人： Delphine Longrie ,  Antti Juhani Niskanen ,  Han Wang ,  Qi Xie ,  Jan Willem Maes ,  Shang Chen ,  Toshiharu Watarai ,  Takahiro Onuma ,  Dai Ishikawa ,  Kunitoshi Namba

IPC分类号： C23C16/02 ,  C23C16/455 ,  H01L21/285 ,  H01L21/768 ,  C23C16/06 ,  C23C16/34 ,  C23C16/44 ,  C23C16/56

摘要： Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.

公开(公告)号：US20190055643A1

公开(公告)日：2019-02-21

申请号：US16040844

申请日：2018-07-20

申请人： ASM IP Holding B.V.

发明人： Delphine Longrie ,  Antti Juhani Niskanen ,  Han Wang ,  Qi Xie ,  Jan Willem Maes ,  Shang Chen ,  Toshiharu Watarai ,  Takahiro Onuma ,  Dai Ishikawa ,  Kunitoshi Namba

IPC分类号： C23C16/02 ,  C23C16/44 ,  C23C16/06 ,  H01L21/768 ,  C23C16/455 ,  H01L21/285 ,  C23C16/56 ,  C23C16/34

摘要： Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.

公开(公告)号：US20180080121A1

公开(公告)日：2018-03-22

申请号：US15795768

申请日：2017-10-27

申请人： ASM IP Holding B.V.

发明人： Delphine Longrie ,  Antti Juhani Niskanen ,  Han Wang ,  Qi Xie ,  Jan Willem Maes ,  Shang Chen ,  Toshiharu Watarai ,  Takahiro Onuma ,  Dai Ishikawa ,  Kunitoshi Namba

IPC分类号： C23C16/02 ,  C23C16/455 ,  H01L21/768 ,  H01L21/285

CPC分类号： C23C16/02 ,  C23C16/06 ,  C23C16/345 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/56 ,  H01L21/28562 ,  H01L21/7685

摘要： Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.