公开(公告)号：US20170018477A1

公开(公告)日：2017-01-19

申请号：US14798136

申请日：2015-07-13

Applicant: ASM IP Holding B.V.

Inventor： Richika Kato ,  Seiji Okuro ,  Kunitoshi Namba ,  Yuya Nonaka ,  Akinori Nakano

IPC: H01L23/31 ,  H01L21/324 ,  H01L21/02

CPC classification number: H01L23/3192 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/324

Abstract: A method for protecting a layer includes: providing a substrate having a target layer and forming a protective layer on the target layer, said protective layer contacting and covering the target layer and containing a hydrocarbon-based layer constituting at least an upper part of the protective layer, which hydrocarbon-based layer is formed by plasma-enhanced atomic layer deposition (PEALD) using an alkylaminosilane precursor and a noble gas without a reactant.

Abstract translation: 一种保护层的方法包括：提供具有目标层并在靶层上形成保护层的衬底，所述保护层与目标层接触并覆盖，并含有至少构成保护层上部的烃基层 层，通过使用烷基氨基硅烷前体的等离子体增强原子层沉积（PEALD）和没有反应物的惰性气体形成烃基层。

公开(公告)号：US09899291B2

公开(公告)日：2018-02-20

申请号：US14798136

申请日：2015-07-13

Applicant: ASM IP Holding B.V.

Inventor： Richika Kato ,  Seiji Okuro ,  Kunitoshi Namba ,  Yuya Nonaka ,  Akinori Nakano

IPC: H01L23/31 ,  H01L21/02 ,  H01L21/324

CPC classification number: H01L23/3192 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/324

Abstract: A method for protecting a layer includes: providing a substrate having a target layer and forming a protective layer on the target layer, said protective layer contacting and covering the target layer and containing a hydrocarbon-based layer constituting at least an upper part of the protective layer, which hydrocarbon-based layer is formed by plasma-enhanced atomic layer deposition (PEALD) using an alkylaminosilane precursor and a noble gas without a reactant.

公开(公告)号：US20140349033A1

公开(公告)日：2014-11-27

申请号：US13901400

申请日：2013-05-23

Applicant: ASM IP Holding B.V.

Inventor： Yuya Nonaka ,  Fumitaka Shoji ,  Hiroki Arai

IPC: C23C16/505

CPC classification number: C23C16/045 ,  C23C16/5096 ,  C23C16/515 ,  H01J37/32091 ,  H01J37/32146 ,  H01J37/32165

Abstract: A method for forming a dielectric film on a substrate by plasma-assisted deposition, includes: introducing a Si-containing process gas to a reaction space wherein a substrate having a surface with patterned recesses is placed; and applying RF power to the process gas in the reaction space to form a dielectric film on the surface by plasma reaction. The RF power is comprised of pulses of high-frequency RF power and pulses of low-frequency RF power, which overlap and are synchronized.

Abstract translation: 通过等离子体辅助沉积在基板上形成电介质膜的方法包括：将含Si工艺气体引入反应空间，其中放置具有图案化凹坑的表面的基板; 并对反应空间中的处理气体施加RF功率，以通过等离子体反应在表面上形成电介质膜。 RF功率包括高频RF功率的脉冲和低频RF功率的脉冲，其重叠并同步。

公开(公告)号：US11761084B2

公开(公告)日：2023-09-19

申请号：US15368104

申请日：2016-12-02

Applicant: ASM IP Holding B.V.

Inventor： Hiroki Arai ,  Yukihiro Mori ,  Yuya Nonaka

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/505 ,  C23C16/452

CPC classification number: C23C16/45565 ,  C23C16/4412 ,  C23C16/452 ,  C23C16/505

Abstract: A substrate processing apparatus includes a stage provided in a chamber, a shower head in which a plurality of slits are formed and which is opposed to the stage, a first gas supply part which supplies a first gas to a space between the stage and the shower head via the plurality of slits, and a second gas supply part which supplies a second gas which is not a noble gas to a region below the stage, wherein the second gas is the same gas as one of a plurality of kinds of gases constituting the first gas in a case where the first gas is a mixture gas constituted of the plurality of kinds of gases, and the second gas is the same gas as the first gas in a case where the first gas is a single kind of gas.

公开(公告)号：US10526704B2

公开(公告)日：2020-01-07

申请号：US14609758

申请日：2015-01-30

Applicant: ASM IP Holding B.V.

Inventor： Yuya Nonaka ,  Yozo Ikedo

IPC: C23C16/00 ,  C23C16/455 ,  C23C16/50

Abstract: A film forming apparatus includes a chamber having a processing space, a stage provided in the processing space and having a substrate placed thereon, a diffusion tube connected to the chamber so that a diffusion space communicating with the processing space is provided right above the stage, and a gas supply tube extending from the outside of the diffusion tube into the diffusion space through a portion of the diffusion tube and having a gas supply orifice in a portion thereof inside of the diffusion space. The gas supply orifice is formed so as to eject a material gas in a direction away from the stage.

公开(公告)号：US09365924B2

公开(公告)日：2016-06-14

申请号：US13901400

申请日：2013-05-23

Applicant: ASM IP Holding B.V.

Inventor： Yuya Nonaka ,  Fumitaka Shoji ,  Hiroki Arai

IPC: C23C16/515 ,  C23C16/04 ,  C23C16/509 ,  H01J37/32

CPC classification number: C23C16/045 ,  C23C16/5096 ,  C23C16/515 ,  H01J37/32091 ,  H01J37/32146 ,  H01J37/32165

Abstract: A method for forming a dielectric film on a substrate by plasma-assisted deposition, includes: introducing a Si-containing process gas to a reaction space wherein a substrate having a surface with patterned recesses is placed; and applying RF power to the process gas in the reaction space to form a dielectric film on the surface by plasma reaction. The RF power is comprised of pulses of high-frequency RF power and pulses of low-frequency RF power, which overlap and are synchronized.

Abstract translation: 通过等离子体辅助沉积在基板上形成电介质膜的方法包括：将含Si工艺气体引入反应空间，其中放置具有图案化凹坑的表面的基板; 并对反应空间中的处理气体施加RF功率，以通过等离子体反应在表面上形成电介质膜。 RF功率包括高频RF功率的脉冲和低频RF功率的脉冲，其重叠并同步。