公开(公告)号：US20240370621A1

公开(公告)日：2024-11-07

申请号：US18686994

申请日：2022-08-22

Applicant: ASML NETHERLANDS B.V.

Inventor： Meng LIU ,  Been-Der CHEN ,  Debao SHAO ,  Jen-Yi WUU ,  Hao CHEN ,  Ayman HAMOUDA ,  Jianhua CHENG

IPC: G06F30/392 ,  G06F111/20

Abstract: Selecting an optimized, geometrically diverse subset of clips for a design layout for a semiconductor wafer is described. A complete representation of the design layout is received. A set of representative clips of the design layout is determined such that individual representative clips comprise different combinations of one or more unique patterns of the design layout. A subset of the representative clips is selected based on the one or more unique patterns. The subset of the representative clips is configured to include: (1) each geometrically unique pattern in a minimum number of representative clips; or (2) as many geometrically unique patterns of the design layout as possible in a maximum number of representative clips. The subset of representative clips is provided as training data for training an optical proximity correction or source mask optimization semiconductor process machine learning model, for example.

公开(公告)号：US20240288764A1

公开(公告)日：2024-08-29

申请号：US18570572

申请日：2022-06-12

Applicant: ASML NETHERLANDS B.V.

Inventor： Ayman HAMOUDA

IPC: G03F1/36 ,  G03F7/00 ,  G06N20/00

CPC classification number: G03F1/36 ,  G03F7/70441 ,  G03F7/705 ,  G03F7/70508 ,  G06N20/00

Abstract: Identification of error clusters in an image predicted by a simulation model (e.g., a machine learning model), and training or adjusting the simulation model by feeding the error cluster information back to the simulation model to improve the prediction in regions of the image having the error clusters. Further, embodiments are disclosed for scoring the predicted images, or the simulation models generating those predicted images, based on a severity of errors in the error clusters. The score may be used in evaluating the simulation models to select a specific simulation model for generating a predicted image that may be used in manufacturing a mask to print a desired pattern on a substrate.

公开(公告)号：US20240126183A1

公开(公告)日：2024-04-18

申请号：US17769107

申请日：2020-09-24

Applicant: ASML NETHERLANDS B.V.

Inventor： Ayman HAMOUDA

IPC: G03F7/00 ,  G06F30/392

CPC classification number: G03F7/706839 ,  G03F7/70441 ,  G03F7/70625 ,  G06F30/392

Abstract: A method for generating a retargeted pattern for a target pattern to be printed on a substrate. The method includes obtaining (i) the target pattern comprising at least one feature, the at least one feature having geometry including a first dimension and a second dimension, and (ii) a plurality of biasing rules defined as a function of the first dimension, the second dimension, and a property associated with features of the target pattern within a measurement region; determining values of the property at a plurality of locations on the at least one feature of the target pattern, each location surrounded by the measurement region; selecting, from the plurality of biasing rules based on the values of the property, a sub-set of biases; and generating the retargeted pattern by applying the selected sub-set of biases to the at least one feature of the target pattern.

公开(公告)号：US20240310718A1

公开(公告)日：2024-09-19

申请号：US18578299

申请日：2022-07-04

Applicant: ASML NETHERLANDS B.V.

Inventor： Ayman HAMOUDA ,  Dong MAO

IPC: G03F1/36 ,  G03F1/70

CPC classification number: G03F1/36 ,  G03F1/70

Abstract: A method for generating a mask pattern for a lithographic process. The method involves generating a smoothed representation of a segmented mask pattern by applying a first smoothing function and adjusting the segmented mask pattern by with a set of changes to one or more of the plurality of segmented features. Further, a patterning process simulation is performed in an iterative manner by using the smoothed mask pattern of an adjusted segmented mask pattern until a termination condition is satisfied. In each iteration, upon adjusting the segmented mask pattern, a smoothed mask pattern is generated and used by process models to simulate the patterning process. Once the termination condition is satisfied, a resultant segmented mask pattern is obtained. Then, a final mask pattern is generated by applying a second smoothing function to a resultant segmented mask pattern.

公开(公告)号：US20240184213A1

公开(公告)日：2024-06-06

申请号：US18278881

申请日：2022-02-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Ayman HAMOUDA

IPC: G03F7/00 ,  G06F30/39 ,  G06N3/0464 ,  G06N20/00

CPC classification number: G03F7/705 ,  G03F7/70508 ,  G06F30/39 ,  G06N3/0464 ,  G06N20/00

Abstract: A method and apparatus for selecting patterns for training or calibrating models related to semiconductor manufacturing. The method includes obtaining a first set of patterns; representing each pattern of the first set of patterns in a representation domain, the representation domain corresponding to electromagnetic functions; and selecting a second set of patterns from the first set of patterns based on the representation domain.

公开(公告)号：US20230185187A1

公开(公告)日：2023-06-15

申请号：US17924543

申请日：2021-05-13

Applicant: ASML NETHERLANDS B.V.

Inventor： Ayman HAMOUDA

IPC: G03F1/70

CPC classification number: G03F1/70

Abstract: A method for verifying a feature of a mask design. The method includes determining localized shapes of the feature, and determining whether there is a breach by the feature of verification criteria based on the localized shapes. The verification criteria specifies correspondence between a threshold of a pattern characteristic and a localized shape. For example, the feature of the mask design may be a freeform curvilinear mask feature. The localized shapes may include local curvatures of individual locations on segments of the feature. In some embodiments, the threshold of the pattern characteristic is a spacing threshold, and the verification criteria specifies the spacing threshold as a function of the local curvatures. The method may facilitate enhanced mask rules checks (MRC), including better definition and verification of MRC criteria for freeform curvilinear masks, and/or have other advantages.