公开(公告)号：US20170176877A1

公开(公告)日：2017-06-22

申请号：US15451358

申请日：2017-03-06

Applicant: ASML NETHERLANDS B.V.

Inventor： Manish RANJAN ,  Carlo Cornelis Maria LUIJTEN ,  Franciscus Johannes Joseph JANSSEN ,  Maksym CHERNYSHOV

IPC: G03F7/20

CPC classification number: G03F7/70875 ,  G03F7/70633 ,  G03F7/70716 ,  G03F7/70933

Abstract: A lithographic apparatus includes a substrate table constructed to hold a substrate, a projection system configured to project a patterned radiation beam through an opening and onto a target portion of the substrate, and a conduit having an outlet in the opening. The conduit is configured to deliver gas to the opening. The lithographic apparatus includes a temperature control apparatus disposed in a space between the projection system and the substrate table. The temperature control device is configured to control the temperature of the gas in the space after the gas passes through the opening.

公开(公告)号：US20170023867A1

公开(公告)日：2017-01-26

申请号：US15214067

申请日：2016-07-19

Applicant: ASML Netherlands B.V.

Inventor： Frank STAALS ,  Carlo Cornelis Maria LUIJTEN ,  Paul Christiaan HINNEN ,  Anton Bernhard VAN OOSTEN

IPC: G03F7/20 ,  G01B11/27 ,  G01B11/02

CPC classification number: G03F7/70633 ,  G01B11/02 ,  G01B11/272 ,  G01B2210/56 ,  G03F7/70625 ,  G03F7/70641

Abstract: Disclosed is a method of monitoring a lithographic process parameter, such as focus and/or dose, of a lithographic process. The method comprises acquiring a first and a second target measurement using respectively a first measurement configuration and a second measurement configuration, and determining the lithographic process parameter from a first metric derived from said first target measurement and said second target measurement. The first metric may be difference. Also disclosed are corresponding measurement and lithographic apparatuses, a computer program and a method of manufacturing devices.

Abstract translation: 公开了一种监测光刻工艺参数的方法，例如光刻工艺的焦点和/或剂量。 该方法包括分别采用第一测量配置和第二测量配置获取第一和第二目标测量，以及根据从所述第一目标测量和所述第二目标测量导出的第一度量来确定光刻处理参数。 第一个度量可能是不同的。 还公开了相应的测量和光刻设备，计算机程序和制造设备的方法。

公开(公告)号：US20150331338A1

公开(公告)日：2015-11-19

申请号：US14651567

申请日：2013-11-26

Applicant: ASML Netherlands B.V.

Inventor： Erik Johan ARLEMARK ,  Andrianus Hendrik KOEVOETS ,  Raymond Wilhelmus Louis LAFARRE ,  Nicolaas TEN KATE ,  Carlo Cornelis Maria LUIJTEN ,  Han-Kwang NIENHUYS

IPC: G03F7/20

CPC classification number: G03F7/70875 ,  G03F7/70908

Abstract: Disclosed is a substrate support for an apparatus of the type which projects a beam of EUV radiation onto a target portion of a substrate (400). The substrate support comprises a substrate table constructed to hold the substrate, a support block (420) for supporting the substrate table, and a cover plate (450′) disposed around the substrate table. The top surface of the cover plate and the top surface of a substrate mounted on the substrate table are all substantially at the same level. At least one sensor unit (430) is located on the substrate support and its top surface is also at the same level as that of the cover plate and substrate. Also disclosed is an EUV lithographic apparatus comprising such a substrate support.

Abstract translation: 公开了一种用于将EUV辐射束投射到基板（400）的目标部分上的装置的基板支撑件。 衬底支撑件包括构造成保持衬底的衬底台，用于支撑衬底台的支撑块（420）和设置在衬底台周围的盖板（450'）。 盖板的顶表面和安装在基板上的基板的顶表面基本上处于相同的水平。 至少一个传感器单元（430）位于基板支撑件上，其顶表面也处于与盖板和基板相同的高度。 还公开了包括这种基板支撑件的EUV光刻设备。

公开(公告)号：US20190324371A1

公开(公告)日：2019-10-24

申请号：US16308835

申请日：2017-06-22

Applicant: ASML NETHERLANDS B.V.

Inventor： Léon Maria Albertus VAN DER LOGT ,  Bart Peter Bert SEGERS ,  Simon Hendrik Celine VAN GORP ,  Carlo Cornelis Maria LUIJTEN ,  Frank STAALS

IPC: G03F7/20

Abstract: A lithographic process is one that applies a desired pattern onto a substrate, usually onto a target portion of the substrate. During the lithographic process, the focus should be controlled. There is disclosed a method for determining a fingerprint of a performance parameter associated with a substrate, such as a focus value to be used during the lithographic process. A reference fingerprint of the performance parameter is determined for a reference substrate. A reference substrate parameter of the reference substrate is determined. A substrate parameter for a substrate, such as a substrate with product structures, is determined. Subsequently, the fingerprint of the performance parameter is determined based on the reference fingerprint, the reference substrate parameter and the substrate parameter. The fingerprint may then be used to control the lithographic process.