公开(公告)号：US20200026182A1

公开(公告)日：2020-01-23

申请号：US16456878

申请日：2019-06-28

Applicant: ASML Netherlands B.V.

Inventor： Miguel GARCIA GRANDA ,  Steven Erik STEEN ,  Eric Jos Anton BROUWER ,  Bart Peter Bert SEGERS ,  Pierre-Yves Jerome Yvan GUITTET ,  Frank STAALS ,  Paulus Jacobus Maria VAN ADRICHEM

IPC: G03F1/44 ,  G03F1/84 ,  G03F7/20

Abstract: Disclosed is a method of determining a characteristic of interest, in particular focus, relating to a structure on a substrate formed by a lithographic process, and an associated patterning device and lithographic system. The method comprises forming a modified substrate feature on the substrate using a corresponding modified reticle feature on a patterning device, the modified substrate feature being formed for a primary function other than metrology, more specifically for providing a support for a vertically integrated structure. The modified reticle feature is such that said modified substrate feature is formed with a geometry dependent on the characteristic of interest during formation. The modified substrate feature can be measured to determine said characteristic of interest.

公开(公告)号：US20210191278A1

公开(公告)日：2021-06-24

申请号：US17197167

申请日：2021-03-10

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo TEL ,  Bart Peter Bert SEGERS ,  Everhardus Cornelis MOS ,  Emil Peter SCHMITT-WEAVER ,  Yichen ZHANG ,  Petrus Gerardus VAN RHEE ,  Xing Lan LIU ,  Maria KILITZIRAKI ,  Reiner Maria JUNGBLUT ,  Hyunwoo YU

IPC: G03F7/20 ,  G06N3/02

Abstract: A method, involving determining a first distribution of a first parameter associated with an error or residual in performing a device manufacturing process; determining a second distribution of a second parameter associated with an error or residual in performing the device manufacturing process; and determining a distribution of a parameter of interest associated with the device manufacturing process using a function operating on the first and second distributions. The function may include a correlation.

公开(公告)号：US20200249576A1

公开(公告)日：2020-08-06

申请号：US16635584

申请日：2018-07-11

Applicant: ASML NETHERLANDS B.V.

Inventor： Patrick WARNAAR ,  Patricius Aloysius Jacobus TINNEMANS ,  Grzegorz GRZELA ,  Everhardus Cornelis MOS ,  Wim Tjibbo TEL ,  Marinus JOCHEMSEN ,  Bart Peter Bert SEGERS ,  Frank STAALS

IPC: G03F7/20

Abstract: A method includes obtaining, for each particular feature of a plurality of features of a device pattern of a substrate being created using a patterning process, a modelled or simulated relation of a parameter of the patterning process between a measurement target for the substrate and the particular feature; and based on the relation and measured values of the parameter from the metrology target, generating a distribution of the parameter across at least part of the substrate for each of the features, the distribution for use in design, control or modification of the patterning process.

公开(公告)号：US20220260925A1

公开(公告)日：2022-08-18

申请号：US17738093

申请日：2022-05-06

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo TEL ,  Bart Peter Bert SEGERS ,  Everhardus Cornelis MOS ,  Emil Peter SCHMITT-WEAVER ,  Yichen ZHANG ,  Petrus Gerardus VAN RHEE ,  Xing Lan LIU ,  Maria KILITZIRAKI ,  Reiner Maria JUNGBLUT ,  Hyunwoo YU

IPC: G03F7/20 ,  G06N3/02

Abstract: A method, involving determining a first distribution of a first parameter associated with an error or residual in performing a device manufacturing process; determining a second distribution of a second parameter associated with an error or residual in performing the device manufacturing process; and determining a distribution of a parameter of interest associated with the device manufacturing process using a function operating on the first and second distributions. The function may include a correlation.

公开(公告)号：US20190324371A1

公开(公告)日：2019-10-24

申请号：US16308835

申请日：2017-06-22

Applicant: ASML NETHERLANDS B.V.

Inventor： Léon Maria Albertus VAN DER LOGT ,  Bart Peter Bert SEGERS ,  Simon Hendrik Celine VAN GORP ,  Carlo Cornelis Maria LUIJTEN ,  Frank STAALS

IPC: G03F7/20

Abstract: A lithographic process is one that applies a desired pattern onto a substrate, usually onto a target portion of the substrate. During the lithographic process, the focus should be controlled. There is disclosed a method for determining a fingerprint of a performance parameter associated with a substrate, such as a focus value to be used during the lithographic process. A reference fingerprint of the performance parameter is determined for a reference substrate. A reference substrate parameter of the reference substrate is determined. A substrate parameter for a substrate, such as a substrate with product structures, is determined. Subsequently, the fingerprint of the performance parameter is determined based on the reference fingerprint, the reference substrate parameter and the substrate parameter. The fingerprint may then be used to control the lithographic process.

公开(公告)号：US20190056673A1

公开(公告)日：2019-02-21

申请号：US16045979

申请日：2018-07-26

Applicant: ASML Netherlands B.V.

Inventor： Fahong LI ,  Miguel GARCIA GRANDA ,  Carlo Cornells Marla LUIJTEN ,  Bart Peter Bert SEGERS ,  Cornelis Andreas Franciscus Johannes VAN DER POEL ,  Frank STAALS ,  Anton Bernhard VAN OOSTEN ,  Mohamed RiDANE

IPC: G03F7/20

Abstract: Focus performance of a lithographic apparatus is measured using pairs of targets that have been exposed (1110) with an aberration setting (e.g. astigmatism) that induces a relative best focus offset between them. A calibration curve (904) is obtained in advance by exposing similar targets on FEM wafers (1174, 1172). In a set-up phase, calibration curves are obtained using multiple aberration settings, and an anchor point (910) is recorded, where all the calibration curves intersect. When a new calibration curve is measured (1192), the anchor point is used to produce an adjusted updated calibration curve (1004′) to cancel focus drift and optionally to measure drift of astigmatism. Another aspect of the disclosure (FIG. 13-15) uses two aberration settings (+AST, −AST) in each measurement, reducing sensitivity to astigmatism drift. Another aspect (FIG. 16-17) uses pairs of targets printed with relative focus offsets, by double exposure in one resist layer.