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公开(公告)号：US20170255112A1
公开(公告)日：2017-09-07
申请号：US15445612
申请日：2017-02-28
Applicant: ASML NETHERLANDS B.V.
Inventor： Adriaan Johan VAN LEEST , Anagnostis TSIATMAS , Paul Christiaan HINNEN , Elliott Gerard McNAMARA , Alok VERMA , Thomas THEEUWES , Hugo Augustinus Joseph CRAMER , Maria Isabel DE LA FUENTE VALENTIN , Koen VAN WITTEVEEN , Martijn Maria ZAAL , Shu-jin WANG
Abstract: A metrology target includes: a first structure arranged to be created by a first patterning process; and a second structure arranged to be created by a second patterning process, wherein the first structure and/or second structure is not used to create a functional aspect of a device pattern, and wherein the first and second structures together form one or more instances of a unit cell, the unit cell having geometric symmetry at a nominal physical configuration and wherein the unit cell has a feature that causes, at a different physical configuration than the nominal physical configuration due to a relative shift in pattern placement in the first patterning process, the second patterning process and/or another patterning process, an asymmetry in the unit cell.
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公开(公告)号：US20210035871A1
公开(公告)日：2021-02-04
申请号：US17072391
申请日：2020-10-16
Applicant: ASML NETHERLANDS B.V.
Inventor： Adriaan Johan VAN LEEST , Anagnostis TSIATMAS , Paul Christiaan HINNEN , Elliott Gerard Mc NAMARA , Alok VERMA , Thomas THEEUWES , Hugo Augustinus Joseph CRAMER , Maria Isabel DE LA FUENTE VALENTIN , Koen VAN WITTEVEEN , Martijn Maria ZAAL , Shu-jin WANG
Abstract: A metrology target includes: a first structure arranged to be created by a first patterning process; and a second structure arranged to be created by a second patterning process, wherein the first structure and/or second structure is not used to create a functional aspect of a device pattern, and wherein the first and second structures together form one or more instances of a unit cell, the unit cell having geometric symmetry at a nominal physical configuration and wherein the unit cell has a feature that causes, at a different physical configuration than the nominal physical configuration due to a relative shift in pattern placement in the first patterning process, the second patterning process and/or another patterning process, an asymmetry in the unit cell.
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公开(公告)号：US20240361702A1
公开(公告)日：2024-10-31
申请号：US18621218
申请日：2024-03-29
Applicant: ASML NETHERLANDS B.V.
Inventor： Anagnostis TSIATMAS , Paul Christiaan Hinnen , Elliott Gerard MC NAMARA , Thomas Theeuwes , Maria Isabel DE LA FUENTE VALENTIN , Mir Homayoun SHAHRJERDY , Arie Jeffrey DEN BOEF , Shu-jin WANG
CPC classification number: G03F7/70633 , G03F7/70625 , G03F7/70683 , G06T7/0006 , G03F7/20 , G06T2207/30148
Abstract: A method including: obtaining a detected representation of radiation redirected by each of a plurality of structures from a substrate additionally having a device pattern thereon, wherein each structure has an intentional different physical configuration of the respective structure than the respective nominal physical configuration of the respective structure, wherein each structure has geometric symmetry at the respective nominal physical configuration, wherein the intentional different physical configuration of the structure causes an asymmetric optical characteristic distribution and wherein a patterning process parameter measures change in the physical configuration; and determining a value, based on the detected representations and based on the intentional different physical configurations, to setup, monitor or correct a measurement recipe for determining the patterning process parameter.
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公开(公告)号：US20190204180A1
公开(公告)日：2019-07-04
申请号：US16214196
申请日：2018-12-10
Applicant: ASML NETHERLANDS B.V.
Inventor： Mariya Vyacheslavivna MEDVEDYEVA , Maria Isabel DE LA FUENTE VALENTIN , Satej Subhash KHEDEKAR , Bert VERSTRAETEN , Bastiaan Onne FAGGINGER AUER
CPC classification number: G01M11/02 , G01B11/002 , G01B2210/56 , G03F7/705 , G03F7/70625 , G03F7/70633
Abstract: Methods for processing data from a metrology process and for obtaining calibration data are disclosed. In one arrangement, measurement data is obtained from a metrology process. The metrology process includes illuminating a target on a substrate with measurement radiation and detecting radiation redirected by the target. The measurement data includes at least a component of a detected pupil representation of an optical characteristic of the redirected radiation in a pupil plane. The method further includes analyzing the at least a component of the detected pupil representation to determine either or both of a position property and a focus property of a radiation spot of the measurement radiation relative to the target.
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