公开(公告)号：US20250013158A1

公开(公告)日：2025-01-09

申请号：US18712671

申请日：2022-11-22

Applicant: ASML NETHERLANDS B.V.

Inventor： Huaichen ZHANG ,  Ruben Cornelis MAAS ,  Syam Parayil VENUGOPALAN ,  Jan Wouter BIJLSMA

IPC: G03F7/00

Abstract: A method and system for designing a mark for use in imaging of a pattern on a substrate using a lithographic process in a lithographic apparatus. The method includes obtaining a mark construction, obtaining a spatial variation of a geometric parameter associated with the mark construction, and determining a geometry design of individual patterns of a mark based on the spatial variation and a spatial location of the mark.

公开(公告)号：US20220342316A1

公开(公告)日：2022-10-27

申请号：US17640792

申请日：2020-09-03

Applicant: ASML Netherlands B.V.

Inventor： Marleen KOOIMAN ,  Maxim PISARENCO ,  Abraham SLACHTER ,  Mark John MASLOW ,  Bernardo Andres OYARZUN RIVERA ,  Wim Tjibbo TEL ,  Ruben Cornelis MAAS

IPC: G03F7/20 ,  G06T7/00 ,  G06T7/33

Abstract: Described herein is a method of training a model configured to predict whether a feature associated with an imaged substrate will be defective after etching of the imaged substrate and determining etch conditions based on the trained model. The method includes obtaining, via a metrology tool, (i) an after development image of the imaged substrate at a given location, the after development image including a plurality of features, and (ii) an after etch image of the imaged substrate at the given location; and training, using the after development image and the after etch image, the model configured to determine defectiveness of a given feature of the plurality of features in the after development image. In an embodiment, the determining of defectiveness is based on comparing the given feature in the after development image with a corresponding etch feature in the after etch image.

公开(公告)号：US20220107571A1

公开(公告)日：2022-04-07

申请号：US17467441

申请日：2021-09-06

Applicant: ASML Netherlands B.V.

Inventor： Thomas Jarik HUISMAN ,  Ruben Cornelis MAAS ,  Hermanus Adrianus DILLEN

IPC: G03F7/20 ,  G01B9/04 ,  G03F1/84 ,  G06T7/12 ,  G03F1/86

Abstract: Disclosed is a method of, and associated apparatus for, determining an edge position relating to an edge of a feature comprised within an image, such as a scanning electron microscope image, which comprises noise. The method comprises determining a reference signal from said image; and determining said edge position with respect to said reference signal. The reference signal may be determined from the image by applying a 1-dimensional low-pass filter to the image in a direction parallel to an initial contour estimating the edge position.

公开(公告)号：US20210327678A1

公开(公告)日：2021-10-21

申请号：US17271667

申请日：2019-08-22

Applicant: ASML NETHERLANDS B.V.

Inventor： Ruben Cornelis MAAS ,  Alexey Olegovich POLYAKOV ,  Teis Johan COENEN

IPC: H01J37/304 ,  H01J37/147 ,  H01J37/302 ,  H01J37/317 ,  H01L21/263 ,  G03F7/20

Abstract: A particle beam apparatus includes an object table configured to hold a semiconductor substrate; a particle beam source configured to generate a particle beam; a detector configured to detect a response of the substrate caused by interaction of the particle beam with the substrate and to output a detector signal representative of the response; and a processing unit configured to: receive or determine a location of one or more defect target areas on the substrate; control the particle beam source to inspect the one or more defect target areas; identify one or more defects within the one or more defect target areas, based on the detector signal obtained during the inspection of the one or more defect target areas; control the particle beam source to repair the one or more defects.

公开(公告)号：US20210079519A1

公开(公告)日：2021-03-18

申请号：US16971012

申请日：2019-02-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Pieter Willem Herman DE JAGER ,  Sander Frederik WUISTER ,  Marie-Claire VAN LARE ,  Ruben Cornelis MAAS ,  Alexey Olegovich POLYAKOV ,  Tamara DRUZHININA ,  Victoria VORONINA ,  Evgenia KURGANOVA ,  Jim Vincent OVERKAMP ,  Bernardo KASTRUP ,  Maarten VAN KAMPEN ,  Alexandr DOLGOV

IPC: C23C16/04 ,  C23C16/455 ,  C23C16/48

Abstract: Methods and apparatuses for forming a patterned layer of material are disclosed. In one arrangement, a selected portion of a surface of a substrate is irradiated with electromagnetic radiation having a wavelength of less than 100 nm during a deposition process. Furthermore, an electric field controller is configured to apply an electric field that is oriented so as to force secondary electrons away from the substrate. The irradiation locally drives the deposition process in the selected portion and thereby causes the deposition process to, for example, form a layer of material in a pattern defined by the selected portion.