公开(公告)号：US11880971B2

公开(公告)日：2024-01-23

申请号：US17671522

申请日：2022-02-14

Applicant: ASML Netherlands B.V.

Inventor： Wei Fang ,  Zhao-Li Zhang ,  Jack Jau

IPC: G06K9/00 ,  G06T7/00 ,  G06V10/44 ,  G06V10/50 ,  G06V10/46

CPC classification number: G06T7/001 ,  G06T7/0004 ,  G06V10/44 ,  G06V10/50 ,  G06T2207/10004 ,  G06T2207/10061 ,  G06T2207/30148 ,  G06V10/467 ,  G06V2201/06

Abstract: An inspection method includes the following steps: identifying a plurality of patterns within an image; and comparing the plurality of patterns with each other for measurement values thereof. The above-mentioned inspection method uses the pattern within the image as a basis for comparison; therefore, measurement values of the plurality of pixels constructing the pattern can be processed with statistical methods and then compared, and the false rate caused by variation of a few pixels is decreased significantly. An inspection system implementing the above-mentioned method is also disclosed.

公开(公告)号：US11842420B2

公开(公告)日：2023-12-12

申请号：US17659467

申请日：2022-04-15

Applicant: ASML Netherlands B.V.

Inventor： Wei Fang ,  Lingling Pu

IPC: G06T7/33 ,  G06T7/73 ,  G06T7/13 ,  G06T7/00 ,  H01L21/67 ,  H01L21/66

CPC classification number: G06T7/337 ,  G06T7/001 ,  G06T7/13 ,  G06T7/74 ,  H01L21/67288 ,  H01L22/12 ,  G06T2207/10061 ,  G06T2207/30148

Abstract: A method for aligning a wafer image with a reference image, comprising: searching for a targeted reference position on the wafer image for aligning the wafer image with the reference image; and in response to a determination that the targeted reference position does not exist: defining a current lock position and an area that encloses the current lock position on the wafer image; computing an alignment score of the current lock position; comparing the alignment score of the current lock position with stored alignment scores of positions previously selected in relation to aligning the wafer image with the reference image; and aligning the wafer image with the reference image based on the comparison.

公开(公告)号：US11650576B2

公开(公告)日：2023-05-16

申请号：US16479199

申请日：2018-01-15

Applicant: ASML Netherlands B.V.

Inventor： Wei Fang ,  Cho Huak Teh ,  Robeter Jian ,  Yi-Ying Wang ,  Shih-Tsung Chen ,  Jian-Min Liao ,  Chuan Li ,  Zhaohui Guo ,  Pang-Hsuan Huang ,  Shao-Wei Lai ,  Shih-Tsung Hsu

IPC: G06T7/00 ,  G06K9/62 ,  G06N5/02 ,  G05B19/418 ,  G06F18/24

CPC classification number: G05B19/41875 ,  G06F18/24 ,  G06N5/02 ,  G06T7/0004 ,  G06T2207/30148

Abstract: A server for knowledge recommendation for defect review. The server includes a processor electronically coupled to an electronic storage device storing a plurality of knowledge files related to wafer defects. The processor is configured to execute a set of instruction to cause the server to: receive a request for knowledge recommendation for inspecting an inspection image from a defect classification server; search for a knowledge file in the electronic storage device that matches the inspection image; and transmit the search result to the defect classification server.

公开(公告)号：US11216938B2

公开(公告)日：2022-01-04

申请号：US16554110

申请日：2019-08-28

Applicant: ASML Netherlands B.V.

Inventor： Lingling Pu ,  Wei Fang ,  Nan Zhao ,  Wentian Zhou ,  Teng Wang ,  Ming Xu

IPC: G06T7/00 ,  G06T7/60 ,  H01L21/66

Abstract: Systems and methods for optimal electron beam metrology guidance are disclosed. According to certain embodiments, the method may include receiving an acquired image of a sample, determining a set of image parameters based on an analysis of the acquired image, determining a set of model parameters based on the set of image parameters, generating a set of simulated images based on the set of model parameters. The method may further comprise performing measurement of critical dimensions on the set of simulated images and comparing critical dimension measurements with the set of model parameters to provide a set of guidance parameters based on comparison of information from the set of simulated images and the set of model parameters. The method may further comprise receiving auxiliary information associated with target parameters including critical dimension uniformity.

公开(公告)号：US12230013B2

公开(公告)日：2025-02-18

申请号：US18365134

申请日：2023-08-03

Applicant: ASML Netherlands B.V.

Inventor： Wentian Zhou ,  Liangjiang Yu ,  Teng Wang ,  Lingling Pu ,  Wei Fang

IPC: G06T7/00 ,  G06F18/214 ,  G06V10/774 ,  G06V10/776 ,  G06V10/98

Abstract: Disclosed herein is a method of automatically obtaining training images to train a machine learning model that improves image quality. The method may comprise analyzing a plurality of patterns of data relating to a layout of a product to identify a plurality of training locations on a sample of the product to use in relation to training the machine learning model. The method may comprise obtaining a first image having a first quality for each of the plurality of training locations, and obtaining a second image having a second quality for each of the plurality of training locations, the second quality being higher than the first quality. The method may comprise using the first image and the second image to train the machine learning model.

公开(公告)号：US12080513B2

公开(公告)日：2024-09-03

申请号：US17633176

申请日：2020-08-08

Applicant: ASML Netherlands B.V.

Inventor： Wei Fang ,  Lingling Pu ,  Bo Wang ,  Zhonghua Dong ,  Yongxin Wang

IPC: H01J37/22 ,  G01N23/2251 ,  G06T5/50 ,  G06T5/77 ,  G06T5/80 ,  H01J37/24 ,  H01J37/244 ,  H01J37/28

CPC classification number: H01J37/222 ,  G01N23/2251 ,  G06T5/50 ,  G06T5/77 ,  G06T5/80 ,  H01J37/244 ,  H01J37/28 ,  G01N2223/07 ,  G01N2223/401 ,  G01N2223/418 ,  G01N2223/507 ,  G06T2207/10061 ,  G06T2207/20081 ,  H01J2237/2448 ,  H01J2237/2806 ,  H01J2237/2809 ,  H01J2237/2817

Abstract: An improved apparatus and method for enhancing an image, and more particularly an apparatus and method for enhancing an image through cross-talk cancellation in a multiple charged-particle beam inspection are disclosed. An improved method for enhancing an image includes acquiring a first image signal of a plurality of image signals from a detector of a multi-beam inspection system. The first image signal corresponds to a detected signal from a first region of the detector on which electrons of a first secondary electron beam and of a second secondary electron beam are incident. The method includes reducing, from the first image signal, cross-talk contamination originating from the second secondary electron beam using a relationship between the first image signal and beam intensities associated with the first secondary electron beam and the second secondary electron beam. The method further includes generating a first image corresponding to first secondary electron beam after reduction.

公开(公告)号：US11681279B2

公开(公告)日：2023-06-20

申请号：US16326172

申请日：2017-08-14

Applicant: ASML Netherlands B.V.

Inventor： Wei Fang

IPC: G05B19/418

CPC classification number: G05B19/41875 ,  G05B19/4183 ,  G05B2219/32193 ,  G05B2219/37224 ,  G05B2219/37448 ,  Y02P90/02

Abstract: Embodiments of the present disclosure provide systems and methods for enhancing the semiconductor manufacturing yield. Embodiments of the present disclosure provide a yield improvement system. The system comprises a training tool configured to generate training data based on receipt of one or more verified results of an inspection of a first substrate. The system also comprises a point determination tool configured to determine one or more regions on a second substrate to inspect based on the training data, weak point information for the second substrate, and an exposure recipe for a scanner of the second substrate.

公开(公告)号：US11416979B2

公开(公告)日：2022-08-16

申请号：US16479190

申请日：2018-01-18

Applicant: ASML Netherlands B.V.

Inventor： Wei Fang ,  Cho Huak Teh ,  Ju Hao Chien ,  Yi-Ying Wang ,  Shih-Tsung Chen ,  Jian-Min Liao ,  Chuan Li ,  Zhaohui Guo ,  Pang-Hsuan Huang ,  Shao-Wei Lai ,  Shih-Tsung Hsu

IPC: G06T7/00

Abstract: A defect displaying method is provided in the disclosure. The method comprises acquiring defect group information from an image of a wafer, wherein the defect group information includes a set of correlations between a plurality of defects identified from the image and one or more corresponding assigned defect types and displaying at least some of the plurality of defects according to their corresponding assigned defect types.

公开(公告)号：US20220113637A1

公开(公告)日：2022-04-14

申请号：US17510524

申请日：2021-10-26

Applicant: ASML Netherlands B.V.

Inventor： Fei Wang ,  Wei Fang ,  Kuo-Shih Liu

IPC: G03F7/20 ,  H01J37/22 ,  G01B15/00 ,  H01J37/28 ,  H01L21/66

Abstract: Systems and methods for conducting critical dimension metrology are disclosed. According to certain embodiments, a charged particle beam apparatus generates a beam for imaging a first area and a second area. Measurements are acquired corresponding to a first feature in the first area, and measurements are acquired corresponding to a second feature in the second area. The first area and the second area are at separate locations on a sample. A combined measurement is calculated based on the measurements of the first feature and the measurements of the second feature.

公开(公告)号：US11720030B2

公开(公告)日：2023-08-08

申请号：US17510524

申请日：2021-10-26

Applicant: ASML Netherlands B.V.

Inventor： Fei Wang ,  Wei Fang ,  Kuo-Shih Liu

IPC: G03F7/20 ,  G01B15/00 ,  H01J37/22 ,  H01J37/28 ,  H01L21/66 ,  G03F7/00

CPC classification number: G03F7/70625 ,  G01B15/00 ,  H01J37/222 ,  H01J37/28 ,  H01L22/12 ,  H01J2237/2817

Abstract: Systems and methods for conducting critical dimension metrology are disclosed. According to certain embodiments, a charged particle beam apparatus generates a beam for imaging a first area and a second area. Measurements are acquired corresponding to a first feature in the first area, and measurements are acquired corresponding to a second feature in the second area. The first area and the second area are at separate locations on a sample. A combined measurement is calculated based on the measurements of the first feature and the measurements of the second feature.