公开(公告)号：US20230042759A1

公开(公告)日：2023-02-09

申请号：US17968352

申请日：2022-10-18

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo Tel ,  Frank Staals ,  Mark John Maslow ,  Roy Anunciado ,  Marinus Jochemsen ,  Hugo Augustinus Joseph Cramer ,  Thomas Theeuwes ,  Paul Christiaan Hinnen

IPC: G03F7/20

Abstract: A method including: computing a value of a first variable of a pattern of, or for, a substrate processed by a patterning process by combining a fingerprint of the first variable on the substrate and a certain value of the first variable; and determining a value of a second variable of the pattern based at least in part on the computed value of the first variable.

公开(公告)号：US11385554B2

公开(公告)日：2022-07-12

申请号：US16456878

申请日：2019-06-28

Applicant: ASML Netherlands B.V.

Inventor： Miguel Garcia Granda ,  Steven Erik Steen ,  Eric Jos Anton Brouwer ,  Bart Peter Bert Segers ,  Pierre-Yves Jerome Yvan Guittet ,  Frank Staals ,  Paulus Jacobus Maria Van Adrichem

IPC: G03F7/20 ,  G03F1/44 ,  G03F1/84

Abstract: Disclosed is a method of determining a characteristic of interest, in particular focus, relating to a structure on a substrate formed by a lithographic process, and an associated patterning device and lithographic system. The method comprises forming a modified substrate feature on the substrate using a corresponding modified reticle feature on a patterning device, the modified substrate feature being formed for a primary function other than metrology, more specifically for providing a support for a vertically integrated structure. The modified reticle feature is such that said modified substrate feature is formed with a geometry dependent on the characteristic of interest during formation. The modified substrate feature can be measured to determine said characteristic of interest.

公开(公告)号：US11029614B2

公开(公告)日：2021-06-08

申请号：US16318388

申请日：2017-06-22

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo Tel ,  Frank Staals ,  Martin Jules Marie-Emile De Nivelle ,  Tanbir Hasan

IPC: G05B19/4097 ,  G03F9/00

Abstract: A method of determining topographical variation across a substrate on which one or more patterns have been applied. The method includes obtaining measured topography data representing a topographical variation across a substrate on which one or more patterns have been applied by a lithographic process; and combining the measured topography data with knowledge relating to intra-die topology to obtain derived topography data having a resolution greater than the resolution of the measured topography data. Also disclosed is a corresponding level sensor apparatus and lithographic apparatus having such a level sensor apparatus, and a more general method of determining variation of a physical parameter from first measurement data of variation of the physical parameter across the substrate and intra-die measurement data of higher resolution than the first measurement data and combining these.

公开(公告)号：US10571812B2

公开(公告)日：2020-02-25

申请号：US16045979

申请日：2018-07-26

Applicant: ASML Netherlands B.V.

Inventor： Fahong Li ,  Miguel Garcia Granda ,  Carlo Cornelis Maria Luijten ,  Bart Peter Bert Segers ,  Cornelis Andreas Franciscus Johannes Van Der Poel ,  Frank Staals ,  Anton Bernhard Van Oosten ,  Mohamed Ridane

IPC: G03F7/20 ,  G01M11/02

Abstract: Focus performance of a lithographic apparatus is measured using pairs of targets that have been exposed (1110) with an aberration setting (e.g. astigmatism) that induces a relative best focus offset between them. A calibration curve (904) is obtained in advance by exposing similar targets on FEM wafers (1174, 1172). In a set-up phase, calibration curves are obtained using multiple aberration settings, and an anchor point (910) is recorded, where all the calibration curves intersect. When a new calibration curve is measured (1192), the anchor point is used to produce an adjusted updated calibration curve (1004′) to cancel focus drift and optionally to measure drift of astigmatism. Another aspect of the disclosure (FIGS. 13-15) uses two aberration settings (+AST, −AST) in each measurement, reducing sensitivity to astigmatism drift. Another aspect (FIGS. 16-17) uses pairs of targets printed with relative focus offsets, by double exposure in one resist layer.

公开(公告)号：US10001710B2

公开(公告)日：2018-06-19

申请号：US15214067

申请日：2016-07-19

Applicant: ASML Netherlands B.V.

Inventor： Frank Staals ,  Carlo Cornelis Maria Luijten ,  Paul Christiaan Hinnen ,  Anton Bernhard Van Oosten

IPC: G01B11/04 ,  G03B27/32 ,  G03B27/74 ,  G03C5/00 ,  G03F7/20 ,  G01B11/02 ,  G01B11/27

CPC classification number: G03F7/70633 ,  G01B11/02 ,  G01B11/272 ,  G01B2210/56 ,  G03F7/70625 ,  G03F7/70641

Abstract: Disclosed is a method of monitoring a lithographic process parameter, such as focus and/or dose, of a lithographic process. The method comprises acquiring a first and a second target measurement using respectively a first measurement configuration and a second measurement configuration, and determining the lithographic process parameter from a first metric derived from said first target measurement and said second target measurement. The first metric may be difference. Also disclosed are corresponding measurement and lithographic apparatuses, a computer program and a method of manufacturing devices.

公开(公告)号：US09977344B2

公开(公告)日：2018-05-22

申请号：US15358321

申请日：2016-11-22

Applicant: ASML Netherlands B.V.

Inventor： Wim Tjibbo Tel ,  Frank Staals

IPC: G03F7/20 ,  G03F9/00

CPC classification number: G03F7/70683 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70641 ,  G03F9/7026

Abstract: Disclosed is a substrate comprising a combined target for measurement of overlay and focus. The target comprises: a first layer comprising a first periodic structure; and a second layer comprising a second periodic structure overlaying the first periodic structure. The target has structural asymmetry which comprises a structural asymmetry component resultant from unintentional mismatch between the first periodic structure and the second periodic structure, a structural asymmetry component resultant from an intentional positional offset between the first periodic structure and the second periodic structure and a focus dependent structural asymmetry component which is dependent upon a focus setting during exposure of said combined target on said substrate. Also disclosed is a method for forming such a target, and associated lithographic and metrology apparatuses.

公开(公告)号：US12287582B2

公开(公告)日：2025-04-29

申请号：US17437884

申请日：2020-02-17

Applicant: ASML NETHERLANDS B.V.

Inventor： Frank Staals ,  Simon Hendrik Celine Van Gorp

IPC: G03F7/00

Abstract: A method for configuring an apparatus for providing structures to a layer on a substrate, the method including: obtaining first data including substrate specific data as measured and/or modeled before the providing of the structures to the layer on the substrate; and determining a configuration of the apparatus for at least two different control regimes based on the first data and the use of a common merit function including parameters associated with the at least two control regimes.

公开(公告)号：US11733615B2

公开(公告)日：2023-08-22

申请号：US17420388

申请日：2019-12-05

Applicant: ASML Netherlands B.V.

Inventor： Frank Staals ,  Christoph Rene Konrad Cebulla Hennerkes

IPC: G03F7/20 ,  G03F7/00

CPC classification number: G03F7/70641

Abstract: Disclosed is a method for selecting a structure for focus monitoring. The method comprises: simulating a Bossung response with focus of a focus dependent parameter, for one or more different structures; and selecting a structure for focus monitoring in a manufacturing process based on the results of said simulating step. The simulating step may be performed using a computational lithography simulation.

公开(公告)号：US11733610B2

公开(公告)日：2023-08-22

申请号：US16722557

申请日：2019-12-20

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo Tel ,  Mark John Maslow ,  Frank Staals ,  Paul Christiaan Hinnen

IPC: G03F7/20 ,  G03F7/00 ,  H01L21/66

CPC classification number: G03F7/2043 ,  G03F7/705 ,  G03F7/70616 ,  G03F7/70625 ,  G03F7/70633 ,  H01L22/12 ,  H01L22/20

Abstract: A method involving determining a contribution that one or more process apparatuses make to a characteristic of a substrate after the substrate has been processed according to a patterning process by the one or more process apparatuses by removing from values of the characteristic of the substrate a contribution of a lithography apparatus to the characteristic and a contribution of one or more pre-lithography process apparatuses to the characteristic.

公开(公告)号：US11586114B2

公开(公告)日：2023-02-21

申请号：US16973377

申请日：2019-06-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Duan-Fu Stephen Hsu ,  Christoph Rene Konrad Cebulla Hennerkes ,  Rafael C. Howell ,  Zhan Shi ,  Xiaoyang Jason Li ,  Frank Staals

IPC: G03F7/20

Abstract: A method for determining a wavefront parameter of a patterning process. The method includes obtaining a reference performance (e.g., a contour, EPE, CD) of a reference apparatus (e.g., a scanner), a lens model for a patterning apparatus configured to convert a wavefront parameter of a wavefront to actuator movement, and a lens fingerprint of a tuning apparatus (e.g., a to-be-matched scanner). Further, the method involves determining the wavefront parameter (e.g., a wavefront parameter such as tilt, offset, etc.) based on the lens fingerprint of the tuning apparatus, the lens model, and a cost function, wherein the cost function is a difference between the reference performance and a tuning apparatus performance.