公开(公告)号：US20130320356A1

公开(公告)日：2013-12-05

申请号：US13486247

申请日：2012-06-01

Applicant: Abbas Torabi ,  Alan Bielunis ,  Todd Southard

Inventor： Abbas Torabi ,  Alan Bielunis ,  Todd Southard

IPC: H01L29/24

CPC classification number: H01L23/367 ,  H01L23/3735 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/267 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor structure having: a doped silicon carbide heat spreader; a semi-insulating silicon carbide layer disposed over the doped silicon carbide heat spreader; and a nitride (such as GaN, Indium nitride, Aluminum nitride) semiconductor layer disposed on the semi-insulating silicon carbide layer.

Abstract translation: 一种具有：掺杂碳化硅散热器的半导体结构; 设置在掺杂碳化硅散热器上的半绝缘碳化硅层; 以及设置在半绝缘碳化硅层上的氮化物（例如GaN，氮化铟，氮化铝）半导体层。

公开(公告)号：US20130221219A1

公开(公告)日：2013-08-29

申请号：US13404277

申请日：2012-02-24

Applicant: Abbas Torabi

Inventor： Abbas Torabi

IPC: G01J5/06 ,  H01L31/0232

CPC classification number: G01J5/06 ,  G01J1/0209 ,  G01J1/0252 ,  G01J1/0488 ,  G01J5/022 ,  G01J5/0285 ,  G01J5/046 ,  G01J5/0862 ,  G01J5/20 ,  G01J2001/448 ,  G01J2005/0077 ,  G01J2005/202 ,  H01L27/14621 ,  H01L27/14649

Abstract: A detector structure having a sensor for detecting energy impinging on the structure in the infrared and/or optical frequency band; an electronics section disposed behind the sensor for processing electrical signal produced by the sensor in response to the sensor detecting the infrared and/or optical energy; and an electrically conductive layer for inhibiting electromagnetic energy outside of the visible and infrared portions of the spectrum, such electrically conductive layer being disposed between impinging energy and the electronics section, such layer having a transmissivity greater than 90 percent in the visible and infrared portions of the spectrum and being reflective and/or dissipative to portions of the impinging energy outside of the visible and infrared portions of the spectrum. In one embodiment an electrically conductive layer having a substantially constant absorptivity to electromagnetic energy within the visible and infrared portions of the spectrum. In one embodiment, the layer is graphene.

Abstract translation: 一种检测器结构，具有用于检测冲击在红外线和/或光频带中的结构的能量的传感器; 设置在所述传感器后面的电子部件，用于响应于所述传感器检测所述红外线和/或光能量而处理由所述传感器产生的电信号; 以及用于在光谱的可见光和红外部分之外抑制电磁能的导电层，这种导电层设置在入射能量和电子部分之间，这样的透光率在可见光和红外部分中的透射率大于90％ 光谱并且对于光谱的可见光和红外部分之外的部分冲击能量是反射和/或耗散的。 在一个实施例中，导电层具有对光谱的可见光和红外部分内的电磁能的基本上恒定的吸收性。 在一个实施例中，该层是石墨烯。

公开(公告)号：US08895925B2

公开(公告)日：2014-11-25

申请号：US13404277

申请日：2012-02-24

Applicant: Abbas Torabi

Inventor： Abbas Torabi

IPC: G01J5/20

CPC classification number: G01J5/06 ,  G01J1/0209 ,  G01J1/0252 ,  G01J1/0488 ,  G01J5/022 ,  G01J5/0285 ,  G01J5/046 ,  G01J5/0862 ,  G01J5/20 ,  G01J2001/448 ,  G01J2005/0077 ,  G01J2005/202 ,  H01L27/14621 ,  H01L27/14649

Abstract: A detector structure having a sensor for detecting energy impinging on the structure in the infrared and/or optical frequency band; an electronics section disposed behind the sensor for processing electrical signal produced by the sensor in response to the sensor detecting the infrared and/or optical energy; and an electrically conductive layer for inhibiting electromagnetic energy outside of the visible and infrared portions of the spectrum, such electrically conductive layer being disposed between impinging energy and the electronics section, such layer having a transmissivity greater than 90 percent in the visible and infrared portions of the spectrum and being reflective and/or dissipative to portions of the impinging energy outside of the visible and infrared portions of the spectrum. In one embodiment an electrically conductive layer having a substantially constant absorptivity to electromagnetic energy within the visible and infrared portions of the spectrum. In one embodiment, the layer is graphene.

Abstract translation: 一种检测器结构，具有用于检测冲击在红外线和/或光频带中的结构的能量的传感器; 设置在所述传感器后面的电子部件，用于响应于所述传感器检测所述红外线和/或光能量而处理由所述传感器产生的电信号; 以及用于在光谱的可见光和红外部分之外抑制电磁能的导电层，这种导电层设置在入射能量和电子部分之间，这样的透光率在可见光和红外部分中的透射率大于90％ 光谱并且对于光谱的可见光和红外部分之外的部分冲击能量是反射和/或耗散的。 在一个实施例中，导电层具有对光谱的可见光和红外部分内的电磁能的基本上恒定的吸收性。 在一个实施例中，该层是石墨烯。