公开(公告)号：US10366734B2

公开(公告)日：2019-07-30

申请号：US15424418

申请日：2017-02-03

Applicant: Advanced Micro Devices, Inc.

Inventor： Alexander W. Schaefer ,  Ravi T. Jotwani ,  Samiul Haque Khan ,  David Hugh McIntyre ,  Stephen Victor Kosonocky ,  John J. Wuu ,  Russell Schreiber

IPC: G11C8/08 ,  G11C11/418 ,  G11C5/14 ,  G11C11/413 ,  G11C11/419

Abstract: A system and method for efficient power, performance and stability tradeoffs of memory accesses under a variety of conditions are described. A system management unit in a computing system interfaces with a memory and a processing unit, and uses boosting of word line voltage levels in the memory to assist write operations. The computing system supports selecting one of multiple word line boost values, each with an associated cross-over region. A cross-over region is a range of operating voltages for the memory used for determining whether to enable or disable boosting of word line voltage levels in the memory. The system management unit selects between enabling and disabling the boosting of word line voltage levels based on a target operational voltage for the memory and the cross-over region prior to updating the operating parameters of the memory to include the target operational voltage.

公开(公告)号：US20180226111A1

公开(公告)日：2018-08-09

申请号：US15424418

申请日：2017-02-03

Applicant: Advanced Micro Devices, Inc.

Inventor： Alexander W. Schaefer ,  Ravi T. Jotwani ,  Samiul Haque Khan ,  David Hugh McIntyre ,  Stephen Victor Kosonocky ,  John J. Wuu ,  Russell Schreiber

IPC: G11C8/08 ,  G06F3/06

CPC classification number: G11C8/08 ,  G11C5/145 ,  G11C11/413 ,  G11C11/418 ,  G11C11/419

Abstract: A system and method for efficient power, performance and stability tradeoffs of memory accesses under a variety of conditions are described. A system management unit in a computing system interfaces with a memory and a processing unit, and uses boosting of word line voltage levels in the memory to assist write operations. The computing system supports selecting one of multiple word line boost values, each with an associated cross-over region. A cross-over region is a range of operating voltages for the memory used for determining whether to enable or disable boosting of word line voltage levels in the memory. The system management unit selects between enabling and disabling the boosting of word line voltage levels based on a target operational voltage for the memory and the cross-over region prior to updating the operating parameters of the memory to include the target operational voltage.

公开(公告)号：US10924120B1

公开(公告)日：2021-02-16

申请号：US16696285

申请日：2019-11-26

Applicant: Advanced Micro Devices, Inc.

Inventor： Deepesh John ,  Samiul Haque Khan ,  Vibhor Mittal ,  Shravan Lakshman ,  Teja Singh

IPC: H03K5/04 ,  H03K5/06 ,  H03K5/156 ,  H03K7/08 ,  H03L7/081 ,  H03L7/099 ,  H03K19/20

Abstract: An oscillator circuit includes a phase-locked loop (PLL) with a plurality of voltage controlled oscillator (VCO), a clock divider circuit receiving the VCO phase outputs and outputting a first stage clock signal with an adjustable clock period related to the PLL period based on selecting a combination of two of the VCO phase outputs. The first stage clock signal has a balanced duty cycle at frequencies that are related to the PLL frequency by even fractional divisions of the VCO phase output period based on the quantity VCO phase outputs, and an unbalanced duty cycle at frequencies that are related by odd fractional divisions. A duty cycle adjustment (DCA) circuit receives the first stage clock signal selectively adjusts a falling edge of the first stage clock signal to provide an even duty cycle and feeds a resulting signal to the second stage clock signal output.