-
公开(公告)号:US10687419B2
公开(公告)日:2020-06-16
申请号:US15621964
申请日:2017-06-13
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor: Ming-Ze Lin , Chia Ching Chen , Yi Chuan Ding
IPC: H05K1/02 , H05K1/09 , H05K1/11 , H05K1/18 , H05K3/36 , H01L21/00 , H01L21/48 , H01L21/50 , H01L21/56 , H01L21/66 , H01L21/78 , H01L23/00 , H01L23/02 , H01L23/48 , H01L23/49 , H01L23/498 , H01L23/522 , H05K3/46 , H01L23/14
Abstract: A semiconductor package device includes a first dielectric layer, a first interconnection layer, a second interconnection layer, and a second dielectric layer. The first dielectric layer has a first surface, a second surface opposite to the first surface and a lateral surface extending between the first surface and the second surface. The first interconnection layer is within the first dielectric layer. The second interconnection layer is on the second surface of the first dielectric layer and extends from the second surface of the first dielectric layer into the first dielectric layer to electrically connect to the first interconnection layer. The second dielectric layer covers the second surface and the lateral surface of the first dielectric layer and the second interconnection layer.
-
公开(公告)号:US11956897B2
公开(公告)日:2024-04-09
申请号:US17873088
申请日:2022-07-25
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor: Ming-Ze Lin , Chia Ching Chen , Yi Chuan Ding
IPC: H05K1/02 , H01L21/00 , H01L21/48 , H01L21/50 , H01L21/56 , H01L21/66 , H01L21/78 , H01L23/00 , H01L23/02 , H01L23/13 , H01L23/14 , H01L23/28 , H01L23/31 , H01L23/34 , H01L23/367 , H01L23/42 , H01L23/48 , H01L23/49 , H01L23/498 , H01L23/522 , H05K1/09 , H05K1/11 , H05K3/07 , H05K3/36 , H05K3/46
CPC classification number: H05K1/0298 , H01L21/4857 , H01L23/145 , H01L23/49822 , H05K1/115 , H05K3/4623 , H01L2224/16225 , H05K2203/1438
Abstract: A semiconductor package device includes a first dielectric layer, a first interconnection layer, a second interconnection layer, and a second dielectric layer. The first dielectric layer has a first surface, a second surface opposite to the first surface and a lateral surface extending between the first surface and the second surface. The first interconnection layer is within the first dielectric layer. The second interconnection layer is on the second surface of the first dielectric layer and extends from the second surface of the first dielectric layer into the first dielectric layer to electrically connect to the first interconnection layer. The second dielectric layer covers the second surface and the lateral surface of the first dielectric layer and the second interconnection layer.
-