公开(公告)号：US11956897B2

公开(公告)日：2024-04-09

申请号：US17873088

申请日：2022-07-25

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Ming-Ze Lin ,  Chia Ching Chen ,  Yi Chuan Ding

IPC: H05K1/02 ,  H01L21/00 ,  H01L21/48 ,  H01L21/50 ,  H01L21/56 ,  H01L21/66 ,  H01L21/78 ,  H01L23/00 ,  H01L23/02 ,  H01L23/13 ,  H01L23/14 ,  H01L23/28 ,  H01L23/31 ,  H01L23/34 ,  H01L23/367 ,  H01L23/42 ,  H01L23/48 ,  H01L23/49 ,  H01L23/498 ,  H01L23/522 ,  H05K1/09 ,  H05K1/11 ,  H05K3/07 ,  H05K3/36 ,  H05K3/46

CPC classification number: H05K1/0298 ,  H01L21/4857 ,  H01L23/145 ,  H01L23/49822 ,  H05K1/115 ,  H05K3/4623 ,  H01L2224/16225 ,  H05K2203/1438

Abstract: A semiconductor package device includes a first dielectric layer, a first interconnection layer, a second interconnection layer, and a second dielectric layer. The first dielectric layer has a first surface, a second surface opposite to the first surface and a lateral surface extending between the first surface and the second surface. The first interconnection layer is within the first dielectric layer. The second interconnection layer is on the second surface of the first dielectric layer and extends from the second surface of the first dielectric layer into the first dielectric layer to electrically connect to the first interconnection layer. The second dielectric layer covers the second surface and the lateral surface of the first dielectric layer and the second interconnection layer.

公开(公告)号：US12261350B2

公开(公告)日：2025-03-25

申请号：US18231771

申请日：2023-08-08

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Guo-Cheng Liao ,  Yi Chuan Ding

IPC: H01Q1/38 ,  H01L21/48 ,  H01L23/498 ,  H01L23/66 ,  H01Q1/22

Abstract: A semiconductor device package is provided that includes a substrate, a first support structure disposed on the substrate and a first antenna. The first support structure includes a first surface spaced apart from the substrate by a first distance. The first antenna is disposed above the first surface of the first support structure. The first antenna has a first surface, a second surface opposite the first surface and a third surface extending from the first surface to the second surface, wherein the first surface and the second surface of the first antenna are exposed.

公开(公告)号：US11107777B2

公开(公告)日：2021-08-31

申请号：US16420079

申请日：2019-05-22

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Guo-Cheng Liao ,  Yi Chuan Ding

IPC: H01L23/00 ,  H01L23/498 ,  H01L23/31

Abstract: A substrate structure includes a substrate body, a bottom circuit layer, a first bottom protection structure and a second bottom protection structure. The substrate body has a top surface and a bottom surface opposite to the top surface. The bottom circuit layer is disposed adjacent to the bottom surface of the substrate body, and includes a plurality of pads. The first bottom protection structure is disposed on the bottom surface of the substrate body, and covers a portion of the bottom circuit layer. The second bottom protection structure is disposed on the bottom surface of the substrate body, and covers a portion of the bottom circuit layer. A second thickness of the second bottom protection structure is greater than a first thickness of the first bottom protection structure.

公开(公告)号：US11362049B2

公开(公告)日：2022-06-14

申请号：US16732163

申请日：2019-12-31

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Guo-Cheng Liao ,  Yi Chuan Ding

IPC: H01L23/66 ,  H01L23/528 ,  H01L23/00

Abstract: A semiconductor device package includes a first surface and a second surface opposite to the first surface. The semiconductor device package further includes a first supporting structure disposed on the first surface of the substrate and a second supporting structure disposed on the first surface of the substrate. The first supporting structure has a first surface spaced apart from the first surface of the substrate by a first distance. The second supporting structure has a first surface spaced apart from the first surface of the substrate by a second distance. The second distance is different from the first distance. The semiconductor device package further includes a first antenna disposed above the first surface of the substrate. The first antenna is supported by the first surface of the first supporting structure and the first surface of the second supporting structure.

公开(公告)号：US10971798B2

公开(公告)日：2021-04-06

申请号：US16375640

申请日：2019-04-04

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Guo-Cheng Liao ,  Yi Chuan Ding

IPC: H01Q1/38 ,  H01Q1/22 ,  H01L23/66 ,  H01L21/48 ,  H01L23/498

Abstract: A semiconductor device package is provided that includes a substrate, a first support structure disposed on the substrate and a first antenna. The first support structure includes a first surface spaced apart from the substrate by a first distance. The first antenna is disposed above the first surface of the first support structure. The first antenna has a first surface, a second surface opposite the first surface and a third surface extending from the first surface to the second surface, wherein the first surface and the second surface of the first antenna are exposed.

公开(公告)号：US11721884B2

公开(公告)日：2023-08-08

申请号：US17222875

申请日：2021-04-05

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Guo-Cheng Liao ,  Yi Chuan Ding

IPC: H01Q1/22 ,  H01Q1/38 ,  H01L21/48 ,  H01L23/498 ,  H01L23/66

CPC classification number: H01Q1/2283 ,  H01L21/48 ,  H01L21/4853 ,  H01L23/498 ,  H01L23/49816 ,  H01L23/66 ,  H01Q1/22 ,  H01Q1/38 ,  H01L2223/6677

Abstract: A semiconductor device package is provided that includes a substrate, a first support structure disposed on the substrate and a first antenna. The first support structure includes a first surface spaced apart from the substrate by a first distance. The first antenna is disposed above the first surface of the first support structure. The first antenna has a first surface, a second surface opposite the first surface and a third surface extending from the first surface to the second surface, wherein the first surface and the second surface of the first antenna are exposed.

公开(公告)号：US11296001B2

公开(公告)日：2022-04-05

申请号：US16592543

申请日：2019-10-03

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Guo-Cheng Liao ,  Yi Chuan Ding

IPC: H01L23/31 ,  H01L25/065 ,  H01L23/498 ,  H01L23/544

Abstract: A package substrate includes a first dielectric layer, a first patterned conductive layer and a first set of alignment marks. The first patterned conductive layer is disposed on the first dielectric layer. The first set of alignment marks is disposed on the first dielectric layer and adjacent to a first edge of the first dielectric layer. The first set of alignment marks includes a plurality of alignment marks. Distances between the alignment marks of the first set of alignment marks and the first edge are different from each other.

公开(公告)号：US10687419B2

公开(公告)日：2020-06-16

申请号：US15621964

申请日：2017-06-13

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Ming-Ze Lin ,  Chia Ching Chen ,  Yi Chuan Ding

IPC: H05K1/02 ,  H05K1/09 ,  H05K1/11 ,  H05K1/18 ,  H05K3/36 ,  H01L21/00 ,  H01L21/48 ,  H01L21/50 ,  H01L21/56 ,  H01L21/66 ,  H01L21/78 ,  H01L23/00 ,  H01L23/02 ,  H01L23/48 ,  H01L23/49 ,  H01L23/498 ,  H01L23/522 ,  H05K3/46 ,  H01L23/14

Abstract: A semiconductor package device includes a first dielectric layer, a first interconnection layer, a second interconnection layer, and a second dielectric layer. The first dielectric layer has a first surface, a second surface opposite to the first surface and a lateral surface extending between the first surface and the second surface. The first interconnection layer is within the first dielectric layer. The second interconnection layer is on the second surface of the first dielectric layer and extends from the second surface of the first dielectric layer into the first dielectric layer to electrically connect to the first interconnection layer. The second dielectric layer covers the second surface and the lateral surface of the first dielectric layer and the second interconnection layer.