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    Run to run control process for controlling critical dimensions
    1.
    再颁专利
    Run to run control process for controlling critical dimensions 有权
    运行以运行控制过程以控制关键尺寸

    公开(公告)号：USRE39518E1

    公开(公告)日：2007-03-13

    申请号：US09908390

    申请日：2001-07-18

    申请人： Anthony John Toprac ,  Douglas John Downey ,  Subhash Gupta

    发明人： Anthony John Toprac ,  Douglas John Downey ,  Subhash Gupta

    IPC分类号： H01L21/66 ,  H01L21/302

    CPC分类号： H01L22/20

    摘要： It has been discovered that all causes of critical dimension variation, both known and unknown, are compensated by adjusting the time of photoresist etch. Accordingly, a control method employs a control system using photoresist etch time as a manipulated variable in either a feedforward or a feedback control configuration to control critical dimension variation during semiconductor fabrication. By controlling critical dimensions through the adjustment of photoresist etch time, many advantages are achieved including a reduced lot-to-lot variation, an increased yield, and increased speed of the fabricated circuits. In one embodiment these advantages are achieved for polysilicon gate critical dimension control in microprocessor circuits. Polysilicon gate linewidth variability is reduced using a control method using either feedforward and feedback or feedback alone. In some embodiments, feedback control is implemented for controlling critical dimensions using photoresist each time as a manipulated variable. In an alternative embodiment, critical dimensions are controlled using RF power as a manipulated variable. A run-to-run control technique is used to drive the critical dimensions of integrated circuits to a set specification. In a run-to-run control technique a wafer test or measurement is made and a process control recipe is adjusted based on the result of the test or measurement on a run-by-run basis. The run-to-run control technique is applied to drive the critical dimensions of a polysilicon gate structure to a target specification. The run-to-run control technique is applied to drive the critical dimensions in an integrated circuit to a defined specification using photoresist etch time as a manipulated variable.

    摘要翻译： 已经发现，已知和未知的关键尺寸变化的所有原因通过调整光致抗蚀剂蚀刻的时间来补偿。 因此，控制方法采用使用光致抗蚀剂蚀刻时间的控制系统作为前馈或反馈控制配置中的操纵变量来控制半导体制造期间的临界尺寸变化。 通过调整光致抗蚀剂蚀刻时间来控制关键尺寸，实现了许多优点，包括减少的批次批量变化，增加的产量和增加的制造电路的速度。 在一个实施例中，对微处理器电路中的多晶硅栅极关键尺寸控制实现了这些优点。 使用仅使用前馈和反馈或反馈的控制方法来减少多晶硅栅极线宽变化。 在一些实施例中，实施反馈控制以用于每次作为操纵变量来控制使用光致抗蚀剂的临界尺寸。 在替代实施例中，使用RF功率作为操纵变量来控制临界尺寸。 运行运行控制技术用于将集成电路的关键尺寸驱动到设定规格。 在运行到运行的控制技术中，进行晶片测试或测量，并且基于逐个运行的测试或测量的结果来调整过程控制配方。 运行运行控制技术用于将多晶硅栅极结构的关键尺寸驱动到目标规格。 应用运行控制技术将集成电路中的关键尺寸驱动到使用光刻胶蚀刻时间作为操作变量的规定规格。

    Run-to-run control process for controlling critical dimensions
    2.
    发明授权
    Run-to-run control process for controlling critical dimensions 失效
    用于控制关键尺寸的运行控制过程

    公开(公告)号：US5926690A

    公开(公告)日：1999-07-20

    申请号：US864489

    申请日：1997-05-28

    申请人： Anthony John Toprac ,  Douglas John Downey ,  Subhash Gupta

    发明人： Anthony John Toprac ,  Douglas John Downey ,  Subhash Gupta

    IPC分类号： H01L21/66 ,  G01R31/26

    CPC分类号： H01L22/20

    摘要： It has been discovered that all causes of critical dimension variation, both known and unknown, are compensated by adjusting the time of photoresist etch. Accordingly, a control method employs a control system using photoresist etch time as a manipulated variable in either a feedforward or a feedback control configuration to control critical dimension variation during semiconductor fabrication. By controlling critical dimensions through the adjustment of photoresist etch time, many advantages are achieved including a reduced lot-to-lot variation, an increased yield, and increased speed of the fabricated circuits. In one embodiment these advantages are achieved for polysilicon gate critical dimension control in microprocessor circuits. Polysilicon gate linewidth variability is reduced using a control method using either feedforward and feedback or feedback alone. In some embodiments, feedback control is implemented for controlling critical dimensions using photoresist etch time as a manipulated variable. In an alternative embodiment, critical dimensions are controlled using RF power as a manipulated variable. A run-to-run control technique is used to drive the critical dimensions of integrated circuits to a set specification. In a run-to-run control technique a wafer test or measurement is made and a process control recipe is adjusted based on the result of the test or measurement on a run-by-run basis. The run-to-run control technique is applied to drive the critical dimensions of a polysilicon gate structure to a target specification. The run-to-run control technique is applied to drive the critical dimensions in an integrated circuit to a defined specification using photoresist etch time as a manipulated variable.

    摘要翻译： 已经发现，已知和未知的关键尺寸变化的所有原因通过调整光致抗蚀剂蚀刻的时间来补偿。 因此，控制方法采用使用光致抗蚀剂蚀刻时间的控制系统作为前馈或反馈控制配置中的操纵变量来控制半导体制造期间的临界尺寸变化。 通过调整光致抗蚀剂蚀刻时间来控制关键尺寸，实现了许多优点，包括减少的批次批量变化，增加的产量和增加的制造电路的速度。 在一个实施例中，对微处理器电路中的多晶硅栅极关键尺寸控制实现了这些优点。 使用仅使用前馈和反馈或反馈的控制方法来减少多晶硅栅极线宽变化。 在一些实施例中，实施反馈控制以使用光致抗蚀剂蚀刻时间来控制临界尺寸作为操纵变量。 在替代实施例中，使用RF功率作为操纵变量来控制临界尺寸。 运行运行控制技术用于将集成电路的关键尺寸驱动到设定规格。 在运行到运行的控制技术中，进行晶片测试或测量，并且基于逐个运行的测试或测量的结果来调整过程控制配方。 运行运行控制技术用于将多晶硅栅极结构的关键尺寸驱动到目标规格。 应用运行控制技术将集成电路中的关键尺寸驱动到使用光刻胶蚀刻时间作为操作变量的规定规格。

    System for treating conditions of the periodontium
    4.
    发明申请
    System for treating conditions of the periodontium 审中-公开
    治疗牙周膜病变的系统

    公开(公告)号：US20060280698A1

    公开(公告)日：2006-12-14

    申请号：US11152499

    申请日：2005-06-14

    申请人： Subhash Gupta ,  Dennis Flanagan

    发明人： Subhash Gupta ,  Dennis Flanagan

    IPC分类号： A61K8/96 ,  A61K36/18

    CPC分类号： A61Q11/00 ,  A61K8/97 ,  A61K36/18

    摘要： A system for treating conditions of the periodontium, such as gingivitis and periodontitis, includes an Ayurvedic medicinal solution and an applicator for delivering the solution to the periodontium. The Ayurvedic medicinal solution utilizes herbal extracts to break-down bacteria which can inflame gum tissue. In one embodiment, the solution comprises approximately 1 gram of triphala extract for every 10 ml of glycerine. In another embodiment, the solution comprises approximately 1 gram of amla extract for every 10 ml of glycerine. The applicator for delivering the solution to the periodontium may either be in the form of a cotton swab-type wand, a pipette or a spray dispenser.

    摘要翻译： 用于治疗牙周病例如牙龈炎和牙周炎的系统包括阿育吠陀药用溶液和用于将溶液递送到牙周膜的施用器。 阿育吠陀药用溶液利用草药提取物分解可以使牙龈组织发炎的细菌。 在一个实施方案中，该溶液包含每10ml甘油约1克的三菌属提取物。 在另一个实施方案中，该溶液包含每10ml甘油约1克的amla提取物。 用于将溶液递送到牙周组织的施用器可以是棉签式棒，移液管或喷雾分配器的形式。