公开(公告)号：US20230187215A1

公开(公告)日：2023-06-15

申请号：US18106379

申请日：2023-02-06

Applicant: Applied Materials, Inc.

Inventor： Sai Abhinand ,  Michael Sorensen ,  Karthik Elumalai ,  Dimantha Rajapaksa ,  Cheng Sun ,  James S. Papanu ,  Gaurav Mehta ,  Eng Sheng Peh ,  Sri Thirunavukarasu ,  Onkara Korasiddaramaiah

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/683 ,  H01L21/82

CPC classification number: H01L21/3065 ,  H01J37/32715 ,  H01L21/6833 ,  H01L21/82 ,  H01J37/32642 ,  H01J2237/3341

Abstract: Electrostatic chucks with reduced current leakage and methods of dicing semiconductor wafers are described. In an example, an etch apparatus includes a chamber, and a plasma source within or coupled to the chamber. An electrostatic chuck is within the chamber. The electrostatic chuck includes a conductive pedestal having a plurality of notches at a circumferential edge thereof. The electrostatic chuck also includes a plurality of lift pins corresponding to ones of the plurality of notches.

公开(公告)号：US11600492B2

公开(公告)日：2023-03-07

申请号：US16709522

申请日：2019-12-10

Applicant: Applied Materials, Inc.

Inventor： Sai Abhinand ,  Michael Sorensen ,  Karthik Elumalai ,  Dimantha Rajapaksa ,  Cheng Sun ,  James S. Papanu ,  Gaurav Mehta ,  Eng Sheng Peh ,  Sri Thirunavukarasu ,  Onkara Korasiddaramaiah

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/683 ,  H01L21/82

Abstract: Electrostatic chucks with reduced current leakage and methods of dicing semiconductor wafers are described. In an example, an etch apparatus includes a chamber, and a plasma source within or coupled to the chamber. An electrostatic chuck is within the chamber. The electrostatic chuck includes a conductive pedestal having a plurality of notches at a circumferential edge thereof. The electrostatic chuck also includes a plurality of lift pins corresponding to ones of the plurality of notches.

公开(公告)号：US10465288B2

公开(公告)日：2019-11-05

申请号：US14461318

申请日：2014-08-15

Applicant: Applied Materials, Inc.

Inventor： Rohit Mishra ,  Siva Suri Chandra Rao Bhesetti ,  Eng Sheng Peh ,  Sriskantharajah Thirunavukarasu ,  Shoju Vayyapron ,  Cheng Sun

IPC: C23C16/50 ,  H01J37/32 ,  C23C16/455

Abstract: A nozzle for uniform plasma processing comprises an inlet portion and an outlet portion. The inlet portion has a side surface substantially parallel to a vertical axis. The inlet portion comprises a plurality of gas channels. The outlet portion is coupled to the inlet portion. The outlet portion comprises a plurality of outlets. At least one of the outlets is at an angle other than a right angle relative to the vertical axis.

公开(公告)号：US20200017972A1

公开(公告)日：2020-01-16

申请号：US16584707

申请日：2019-09-26

Applicant: Applied Materials, Inc.

Inventor： Rohit Mishra ,  Siva Suri Chandra Rao Bhesetti ,  Eng Sheng Peh ,  Sriskantharajah Thirunavukarasu ,  Shoju Vayyapron ,  Cheng Sun

IPC: C23C16/50 ,  H01J37/32 ,  C23C16/455

Abstract: A nozzle for uniform plasma processing comprises an inlet portion and an outlet portion. The inlet portion has a side surface substantially parallel to a vertical axis. The inlet portion comprises a plurality of gas channels. The outlet portion is coupled to the inlet portion. The outlet portion comprises a plurality of outlets. At least one of the outlets is at an angle other than a right angle relative to the vertical axis.

公开(公告)号：US11053590B2

公开(公告)日：2021-07-06

申请号：US16584707

申请日：2019-09-26

Applicant: Applied Materials, Inc.

Inventor： Rohit Mishra ,  Siva Suri Chandra Rao Bhesetti ,  Eng Sheng Peh ,  Sriskantharajah Thirunavukarasu ,  Shoju Vayyapron ,  Cheng Sun

IPC: H01J37/32 ,  C23C16/50 ,  C23C16/455

Abstract: A nozzle for uniform plasma processing comprises an inlet portion and an outlet portion. The inlet portion has a side surface substantially parallel to a vertical axis. The inlet portion comprises a plurality of gas channels. The outlet portion is coupled to the inlet portion. The outlet portion comprises a plurality of outlets. At least one of the outlets is at an angle other than a right angle relative to the vertical axis.

公开(公告)号：US20210175086A1

公开(公告)日：2021-06-10

申请号：US16709522

申请日：2019-12-10

Applicant: Applied Materials, Inc.

Inventor： Sai Abhinand ,  Michael Sorensen ,  Karthik Elumalai ,  Dimantha Rajapaksa ,  Cheng Sun ,  James S. Papanu ,  Gaurav Mehta ,  Eng Sheng Peh ,  Sri Thirunavukarasu ,  Onkara Korasiddaramaiah

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/683 ,  H01L21/82

Abstract: Electrostatic chucks with reduced current leakage and methods of dicing semiconductor wafers are described. In an example, an etch apparatus includes a chamber, and a plasma source within or coupled to the chamber. An electrostatic chuck is within the chamber. The electrostatic chuck includes a conductive pedestal having a plurality of notches at a circumferential edge thereof. The electrostatic chuck also includes a plurality of lift pins corresponding to ones of the plurality of notches.