公开(公告)号：US20230313380A1

公开(公告)日：2023-10-05

申请号：US18200497

申请日：2023-05-22

Applicant: Applied Materials, Inc.

Inventor： Sukti CHATTERJEE ,  Kenichi OHNO ,  Lance A. SCUDDER ,  Yuriy MELNIK ,  David A. BRITZ ,  Pravin K. NARWANKAR ,  Thomas KNISLEY ,  Mark SALY ,  Jeffrey ANTHIS

IPC: C23C16/56 ,  C22C19/03 ,  C23C16/40

CPC classification number: C23C16/56 ,  C22C19/03 ,  C23C16/405

Abstract: Embodiments of the present disclosure generally relate to protective coatings on aerospace components and methods for depositing the protective coatings. In one or more embodiments, an aerospace component has a body containing a nickel superalloy, a metal oxide template layer disposed on the body, and an aluminum oxide layer disposed between the body of the aerospace component and the metal oxide template layer. The metal oxide template layer contains chromium oxide, chromium oxide hydroxide, or a combination thereof. The aluminum oxide layer contains α-Al2O3. The metal oxide template layer and the aluminum oxide layer have a corundum crystal structure and have crystal structures with a lattice mismatch of about 0.1% to about 10%.

公开(公告)号：US20190148131A1

公开(公告)日：2019-05-16

申请号：US16248080

申请日：2019-01-15

Applicant: Applied Materials, Inc.

Inventor： Abhishek DUBE ,  Schubert S. CHU ,  Jessica S. KACHIAN ,  David THOMPSON ,  Jeffrey ANTHIS

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/283 ,  C23C16/04 ,  C23C16/52 ,  C23C16/455

Abstract: Methods and apparatus for processing a substrate are described herein. Methods for passivating dielectric materials include forming alkyl silyl moieties on exposed surfaces of the dielectric materials. Suitable precursors for forming the alkyl silyl moieties include (trimethylsilyl)pyrrolidine, aminosilanes, and dichlorodimethylsilane, among others. A capping layer may be selectively deposited on source/drain materials after passivation of the dielectric materials. Apparatus for performing the methods described herein include a platform comprising a transfer chamber, a pre-clean chamber, an epitaxial deposition chamber, a passivation chamber, and an atomic layer deposition chamber.

公开(公告)号：US20170352531A1

公开(公告)日：2017-12-07

申请号：US15684827

申请日：2017-08-23

Applicant: Applied Materials, Inc.

Inventor： Abhishek DUBE ,  Schubert S. CHU ,  Jessica S. KACHIAN ,  David THOMPSON ,  Jeffrey ANTHIS

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/04 ,  H01L21/283 ,  H01J37/32

CPC classification number: H01L21/0228 ,  C23C16/04 ,  C23C16/45544 ,  C23C16/52 ,  H01J37/32009 ,  H01J37/32357 ,  H01J37/32522 ,  H01J37/32899 ,  H01J2237/334 ,  H01L21/02049 ,  H01L21/02057 ,  H01L21/0217 ,  H01L21/02172 ,  H01L21/02175 ,  H01L21/283 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/32 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/67745

Abstract: Methods and apparatus for processing a substrate are described herein. Methods for passivating dielectric materials include forming alkyl silyl moieties on exposed surfaces of the dielectric materials. Suitable precursors for forming the alkyl silyl moieties include (trimethylsilyl)pyrrolidine, aminosilanes, and dichlorodimethylsilane, among others. A capping layer may be selectively deposited on source/drain materials after passivation of the dielectric materials. Apparatus for performing the methods described herein include a platform comprising a transfer chamber, a pre-clean chamber, an epitaxial deposition chamber, a passivation chamber, and an atomic layer deposition chamber.

公开(公告)号：US20200071816A1

公开(公告)日：2020-03-05

申请号：US16557086

申请日：2019-08-30

Applicant: APPLIED MATERIALS, INC.

Inventor： Wei LEI ,  Jeffrey ANTHIS

IPC: C23C16/16 ,  C23C16/08 ,  C23C16/02 ,  C23C16/44

Abstract: Methods for selectively depositing a layer atop a substrate having a metal surface and a dielectric surface are provided including contacting the substrate and metal surface with molybdenum hexacarbonyl to selectively deposit a molybdenum layer atop the metal surface of the substrate, wherein the dielectric layer inhibits deposition of the molybdenum layer atop the dielectric surface. In embodiments, contacting the substrate and metal surface with molybdenum hexacarbonyl is performed at a low temperature such as below 150 degrees Celsius or about 105 to about 125 degrees Celsius.

公开(公告)号：US20170084449A1

公开(公告)日：2017-03-23

申请号：US15247586

申请日：2016-08-25

Applicant: Applied Materials, Inc.

Inventor： Abhishek DUBE ,  Schubert S. CHU ,  Jessica S. KACHIAN ,  David THOMPSON ,  Jeffrey ANTHIS

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/455 ,  H01L21/283

CPC classification number: H01L21/0228 ,  C23C16/04 ,  C23C16/45544 ,  H01J37/32009 ,  H01J37/32357 ,  H01J37/32522 ,  H01J37/32899 ,  H01J2237/334 ,  H01L21/02049 ,  H01L21/02057 ,  H01L21/0217 ,  H01L21/02172 ,  H01L21/02175 ,  H01L21/283 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/32 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/67745

Abstract: Methods and apparatus for processing a substrate are described herein. Methods for passivating dielectric materials include forming alkyl silyl moieties on exposed surfaces of the dielectric materials. Suitable precursors for forming the alkyl silyl moieties include (trimethylsilyl)pyrrolidine, aminosilanes, and dichlorodimethylsilane, among others. A capping layer may be selectively deposited on source/drain materials after passivation of the dielectric materials. Apparatus for performing the methods described herein include a platform comprising a transfer chamber, a pre-clean chamber, an epitaxial deposition chamber, a passivation chamber, and an atomic layer deposition chamber.

公开(公告)号：US20140326276A1

公开(公告)日：2014-11-06

申请号：US14255443

申请日：2014-04-17

Applicant: APPLIED MATERIALS, INC.

Inventor： Kai WU ,  Bo ZHENG ,  Sang Ho YU ,  Avgerinos V. GELATOS ,  Bhushan N. ZOPE ,  Jeffrey ANTHIS ,  Benjamin SCHMIEGE

IPC: C23C16/44

CPC classification number: C23C16/4405 ,  B08B9/00 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32862

Abstract: Implementations described herein generally relate to methods and apparatus for in-situ removal of unwanted deposition buildup from one or more interior surfaces of a semiconductor substrate processing chamber. In one implementation, a method for removing cobalt or cobalt containing deposits from one or more interior surfaces of a substrate processing chamber after processing a substrate disposed in the substrate processing chamber is provided. The method comprises forming a reactive species from the fluorine containing cleaning gas mixture, permitting the reactive species to react with the cobalt and/or the cobalt containing deposits to form cobalt fluoride in a gaseous state and purging the cobalt fluoride in gaseous state out of the substrate processing chamber.

Abstract translation: 本文描述的实施方式一般涉及用于从半导体衬底处理室的一个或多个内表面原位去除不想要的沉积累积的方法和装置。 在一个实施方式中，提供了在处理设置在基板处理室中的基板之后从基板处理室的一个或多个内表面去除含钴或钴的沉积物的方法。 该方法包括从含氟清洗气体混合物中形成反应性物质，使反应物质与钴和/或含钴沉积物反应形成气态氟化钴，并将氟化氢以气态吹扫出来 基板处理室。