公开(公告)号：US20170194430A1

公开(公告)日：2017-07-06

申请号：US15395928

申请日：2016-12-30

Applicant: Applied Materials, Inc.

Inventor： Bingxi Sun WOOD ,  Michael G. WARD ,  Shiyu SUN ,  Michael CHUDZIK ,  Nam Sung KIM ,  Hua CHUNG ,  Yi-Chiau HUANG ,  Chentsau YING ,  Ying ZHANG ,  Chi-Nung NI ,  Lin DONG ,  Dongqing YANG

IPC: H01L29/06 ,  H01L21/02 ,  H01L29/66 ,  H01L21/311 ,  H01L21/764 ,  H01L21/306 ,  H01L29/423

CPC classification number: H01L29/0673 ,  H01L21/02115 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/764 ,  H01L29/0649 ,  H01L29/0669 ,  H01L29/42392 ,  H01L29/66742 ,  H01L29/66772 ,  H01L29/66795 ,  H01L29/78696

Abstract: The present disclosure provides methods for forming nanowire spacers for nanowire structures with desired materials in horizontal gate-all-around (hGAA) structures for semiconductor chips. In one example, a method of forming nanowire spaces for nanowire structures on a substrate includes performing a lateral etching process on a substrate having a multi-material layer disposed thereon, wherein the multi-material layer including repeating pairs of a first layer and a second layer, the first and second layers each having a first sidewall and a second sidewall respectively exposed in the multi-material layer, wherein the lateral etching process predominately etches the second layer through the second layer forming a recess in the second layer, filling the recess with a dielectric material, and removing the dielectric layer over filled from the recess.