公开(公告)号：US20200075353A1

公开(公告)日：2020-03-05

申请号：US16519586

申请日：2019-07-23

Applicant: Applied Materials, Inc.

Inventor： Tejas ULAVI ,  Thuy BRITCHER ,  Amit Kumar BANSAL

IPC: H01L21/67 ,  G05D7/06

Abstract: A substrate processing system includes a processing chamber that includes a substrate support positioned therein. The substrate processing system includes a valve system fluidly coupled to the processing chamber and configured to control flow of gas into the processing chamber. The valve system includes a primary flow line and a first gas source flow line fluidly coupled to the primary flow line through a first gas source valve. The valve system includes a second gas source flow line fluidly coupled to the primary flow line through a second gas source valve. The first gas source valve and the second gas source valve are positioned in series within the primary flow line.

公开(公告)号：US20190080889A1

公开(公告)日：2019-03-14

申请号：US15701222

申请日：2017-09-11

Applicant: Applied Materials, Inc.

Inventor： Kalyanjit GHOSH ,  Shailendra SRIVASTAVA ,  Tejas ULAVI ,  Yusheng ZHOU ,  Amit Kumar BANSAL ,  Sanjeev BALUJA

IPC: H01J37/32 ,  H01L21/67

Abstract: Implementations disclosed herein generally relate to systems and methods of protecting a substrate support in a process chamber from cleaning fluid during a cleaning process. The method of cleaning the process chamber includes positioning in the process chamber a cover substrate above a substrate support and a process kit that separates a purge volume from a process volume. The method of cleaning includes flowing a purge gas in the purge volume to protect the substrate support and flowing a cleaning fluid to a process volume above the cover substrate, flowing the cleaning fluid in the process volume to an outer flow path, and to an exhaust outlet in the chamber body. The purge volume is maintained at a positive pressure with respect to the process volume to block the cleaning fluid from the purge volume.

公开(公告)号：US20200251311A1

公开(公告)日：2020-08-06

申请号：US16855126

申请日：2020-04-22

Applicant: Applied Materials, Inc.

Inventor： Kalyanjit GHOSH ,  Shailendra SRIVASTAVA ,  Tejas ULAVI ,  Yusheng ZHOU ,  Amit Kumar BANSAL ,  Sanjeev BALUJA

IPC: H01J37/32 ,  H01L21/67

Abstract: Implementations disclosed herein generally relate to systems and methods of protecting a substrate support in a process chamber from cleaning fluid during a cleaning process. The method of cleaning the process chamber includes positioning in the process chamber a cover substrate above a substrate support and a process kit that separates a purge volume from a process volume. The method of cleaning includes flowing a purge gas in the purge volume to protect the substrate support and flowing a cleaning fluid to a process volume above the cover substrate, flowing the cleaning fluid in the process volume to an outer flow path, and to an exhaust outlet in the chamber body. The purge volume is maintained at a positive pressure with respect to the process volume to block the cleaning fluid from the purge volume.

公开(公告)号：US20200043704A1

公开(公告)日：2020-02-06

申请号：US16516419

申请日：2019-07-19

Applicant: Applied Materials, Inc.

Inventor： Tejas ULAVI ,  Amit Kumar BANSAL ,  Nitin PATHAK ,  Ajit BALAKRISHNA

IPC: H01J37/32 ,  C23C16/455 ,  H01L21/02

Abstract: Embodiments of the present disclosure relate to apparatus for improving quality of films deposited on a substrate by a CVD process. More specifically, a branched gas feed assembly uniformly distributes a process gas entering an annular plenum. Each conduit of a first plurality of conduits having substantially equal flow conductance is in fluid communication with one or more conduits of a second plurality of conduits having substantially equal flow conductance. Each conduit of the second plurality of conduits terminates at one of a plurality of outlets. Each outlet of the plurality of outlets is in fluid communication with one or more inlet ports of a plurality of inlet ports formed in the annular plenum. Each inlet port of the plurality of inlet ports is spaced equidistant about a central axis of the annular plenum.

公开(公告)号：US20190122872A1

公开(公告)日：2019-04-25

申请号：US16230766

申请日：2018-12-21

Applicant: Applied Materials, Inc.

Inventor： Kalyanjit GHOSH ,  Sanjeev BALUJA ,  Mayur G. KULKARNI ,  Shailendra SRIVASTAVA ,  Tejas ULAVI ,  Yusheng ALVIN ZHOU ,  Amit Kumar BANSAL ,  Priyanka DASH ,  Zhijun JIANG ,  Ganesh BALASUBRAMANIAN ,  Qiang MA ,  Kaushik ALAYAVALLI ,  Yuxing ZHANG ,  Daniel HWUNG ,  Shawyon JAFARI

IPC: H01J37/32 ,  C23C16/52 ,  C23C16/455

Abstract: Systems and methods for depositing a film in a PECVD chamber while reducing residue buildup in the chamber. In some embodiments disclosed herein, a processing chamber includes a chamber body, a substrate support, a showerhead, and one or more heaters configured to heat the showerhead. In some embodiments, the processing chamber includes a controller.

公开(公告)号：US20180082866A1

公开(公告)日：2018-03-22

申请号：US15703666

申请日：2017-09-13

Applicant: Applied Materials, Inc.

Inventor： Kaushik ALAYAVALLI ,  Ajit BALAKRISHNA ,  Sanjeev BALUJA ,  Amit Kumar BANSAL ,  Matthew James BUSCHE ,  Juan Carlos ROCHA-ALVAREZ ,  Swaminathan T. SRINIVASAN ,  Tejas ULAVI ,  Jianhua ZHOU

IPC: H01L21/67

CPC classification number: H01L21/67103 ,  H01L21/67109 ,  H01L21/67161 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/67248 ,  H01L21/68792

Abstract: Implementations of the disclosure generally relate to a semiconductor processing chamber and, more specifically, a heated support pedestal for a semiconductor processing chamber. In one implementation, a pedestal assembly is disclosed and includes a substrate support comprising a dielectric material and having a support surface for receiving a substrate, a resistive heater encapsulated within the substrate support, a hollow shaft coupled to a support member of the substrate support at a first end of the shaft, and a thermally conductive material disposed at an interface between the support member and the first end of the shaft.

公开(公告)号：US20230128297A1

公开(公告)日：2023-04-27

申请号：US18083301

申请日：2022-12-16

Applicant: Applied Materials, Inc.

Inventor： Kalyanjit GHOSH ,  Shailendra SRIVASTAVA ,  Tejas ULAVI ,  Yusheng ZHOU ,  Amit Kumar BANSAL ,  Sanjeev BALUJA

IPC: H01J37/32 ,  H01L21/67

Abstract: Implementations disclosed herein generally relate to systems and methods of protecting a substrate support in a process chamber from cleaning fluid during a cleaning process. The method of cleaning the process chamber includes positioning in the process chamber a cover substrate above a substrate support and a process kit that separates a purge volume from a process volume. The method of cleaning includes flowing a purge gas in the purge volume to protect the substrate support and flowing a cleaning fluid to a process volume above the cover substrate, flowing the cleaning fluid in the process volume to an outer flow path, and to an exhaust outlet in the chamber body. The purge volume is maintained at a positive pressure with respect to the process volume to block the cleaning fluid from the purge volume.

公开(公告)号：US20220403520A1

公开(公告)日：2022-12-22

申请号：US17893018

申请日：2022-08-22

Applicant: Applied Materials, Inc.

Inventor： Tuan Anh NGUYEN ,  Jason M. SCHALLER ,  Edward P. HAMMOND, IV ,  David BLAHNIK ,  Tejas ULAVI ,  Amit Kumar BANSAL ,  Sanjeev BALUJA ,  Jun MA ,  Juan Carlos ROCHA-ALVAREZ

IPC: C23C16/505 ,  C23C16/44 ,  C23C16/458

Abstract: Embodiments described herein relate to ground path systems providing a shorter and symmetrical path for radio frequency (RF) energy to propagate to a ground to reduce generation of the parasitic plasma. The ground path system bifurcates the processing volume of the chamber to form an inner volume that isolates an outer volume of the processing volume.

公开(公告)号：US20210159094A1

公开(公告)日：2021-05-27

申请号：US17046916

申请日：2019-04-03

Applicant: Applied Materials, Inc.

Inventor： Yuxing ZHANG ,  Sanjeev BALUJA ,  Amit Kumar BANSAL ,  Tuan Anh NGUYEN ,  Tejas ULAVI ,  Gopu KRISHNA

IPC: H01L21/67 ,  H01L21/683 ,  H01L21/02

Abstract: A gas distribution apparatus is disclosed. The apparatus includes a faceplate and a blocker plate. An adjustment mechanism is coupled to the blocker plate and is operable to position the blocker plate relative to the faceplate in order to modify a flow profile of a gas flowing therethrough. A method of processing a substrate using the gas distribution is also disclosed.