公开(公告)号：US20230420308A1

公开(公告)日：2023-12-28

申请号：US17848360

申请日：2022-06-23

Applicant: Applied Materials Israel Ltd.

Inventor： Rafael BISTRITZER ,  Vadim VERESCHAGIN ,  Grigory KLEBANOV ,  Roman KRIS ,  Ilan BEN-HARUSH ,  Omer KEREM ,  Asaf GOLOV ,  Elad SOMMER

IPC: H01L21/66 ,  G06T7/00 ,  G06T7/11 ,  G06V10/764 ,  G06T7/50 ,  G06T7/66

CPC classification number: H01L22/12 ,  G06T7/0004 ,  G06T7/11 ,  G06V10/764 ,  G06T7/50 ,  G06T7/66 ,  G06T2207/20021 ,  G06T2207/30148

Abstract: A system of examination of a semiconductor specimen, comprising a processor and memory circuitry (PMC) configured to:



obtain an image of a hole formed in the semiconductor specimen, wherein the hole exposes at least one layer of a plurality of layers of the semiconductor specimen,
segment the image into a plurality of regions,
generate at least one of:

data Dpix_intensity informative of one or more pixel intensities of one or more regions of the plurality of regions,
data Dgeometry informative of one or more geometrical properties of one or more regions of the plurality of regions,


feed at least one of Dpix_intensity or Dgeometry to a trained classifier to obtain an output, wherein the output of the trained classifier is usable to determine whether the hole ends at a target layer of the plurality of layers.

公开(公告)号：US20230069303A1

公开(公告)日：2023-03-02

申请号：US17465753

申请日：2021-09-02

Applicant: Applied Materials Israel Ltd.

Inventor： Roman KRIS ,  Ilan BEN-HARUSH ,  Rafael BISTRITZER ,  Vadim VERESCHAGIN ,  Elad SOMMER ,  Grigory KLEBANOV ,  Arundeepth THAMARASSERY ,  Jannelle Anna GEVA ,  Gal Daniel GUTTERMAN ,  Einat FRISHMAN ,  Sahar LEVIN

IPC: G01B9/02 ,  G01B11/24 ,  G06T7/00

Abstract: There is provided a system and method of a method of detecting a local shape deviation of a structural element in a semiconductor specimen, comprising: obtaining an image comprising an image representation of the structural element; extracting, from the image, an actual contour of the image representation; estimating a reference contour of the image representation indicative of a standard shape of the structural element, wherein the reference contour is estimated based on a Fourier descriptor representative of the reference contour, the Fourier descriptor being estimated using an optimization method based on a loss function specifically selected to be insensitive to local shape deviation of the actual contour; and performing one or more measurements representative of one or more differences between the actual contour and the reference contour, the measurements indicative of whether a local shape deviation is present in the structural element.

公开(公告)号：US20210383529A1

公开(公告)日：2021-12-09

申请号：US17281948

申请日：2019-10-31

Applicant: APPLIED MATERIALS ISRAEL LTD.

Inventor： Roman KRIS ,  Roi MEIR ,  Sahar LEVIN ,  Ishai SCHWARZBAND ,  Grigory KLEBANOV ,  Shimon LEVI ,  Efrat NOIFELD ,  Hiroshi MIROKU ,  Taku YOSHIZAWA ,  Kasturi SAHA ,  Sharon DUVDEVANI-BAR ,  Vadim VERESCHAGIN

IPC: G06T7/00 ,  G06K9/46 ,  G06K9/00 ,  G06T7/60 ,  G06T7/13 ,  G06T7/194 ,  G01N23/225

Abstract: A method for process control of a semiconductor structure fabricated by a series of fabrication steps, the method comprising obtaining an image of the semiconductor structure indicative of at least two individual fabrication steps; wherein the image is generated by scanning the semiconductor structure with a charged particle beam and collecting signals emanating from the semiconductor structure; and processing, by a hardware processor, the image to determining a parameter of the semiconductor structure, wherein processing includes measuring step/s from among the fabrication steps as an individual feature.

公开(公告)号：US20200327652A1

公开(公告)日：2020-10-15

申请号：US16652970

申请日：2018-10-01

Applicant: APPLIED MATERIALS ISRAEL LTD.

Inventor： Vadim VERESCHAGIN ,  Roman KRIS ,  Ishai SCHWARZBAND ,  Boaz COHEN ,  Ariel SHKALIM ,  Evgeny BAL

IPC: G06T7/00 ,  G06T7/13 ,  G06T7/60

Abstract: A captured image of a pattern and a reference image of the pattern may be received. A contour of interest of the pattern may be identified. One or more measurements of a dimension of the pattern may be determined for each of the reference image and the captured image with respect to the contour of interest of the pattern. A defect associated with the contour of interest may be classified based on the determined one or more measurements of the dimension of the pattern for each of the reference image and the captured image.