摘要:
A static receiver having a first inversion threshold for received signals undergoing a HIGH-to-LOW transition, and a second inversion threshold for received signals undergoing a LOW-to-HIGH transition, where the first inversion threshold is greater than the second inversion threshold. One embodiment comprises a static receiver, a pFET, and a nFET, where when a HIGH-to-LOW transition is being received at the receiver's input port, the pFET is coupled to the input port so as to contribute to raising the inversion threshold, and when a LOW-to-HIGH transition is being received at the input port, the nFET is coupled to the input port so as to contribute to lowering the inversion threshold. Other embodiments are described and claimed.
摘要:
Embodiments of the present invention relate to memory circuits with heavily loaded bit-lines, and where either the effect of leakage current in the read access or pass transistors is reduced, or leakage current is reduced.
摘要:
An integrated circuit (IC) bus architecture is disclosed. The bus architecture includes a receiver for fast on-chip signal transmission. The receiver includes a first gate device having one terminal connected to a voltage source and a gate terminal connectable to receive a sense signal. A second gate device includes one terminal connected to another terminal of the first gate device, a gate terminal connectable to receive the sense signal and another terminal serving as an input terminal of the receiver and connectable to an interconnect bus to receive input signals from other components on the IC chip. The receiver also includes a third gate device having one terminal connected to a voltage source and another terminal serving as an output terminal of the receiver and connected to the other terminal of the first gate device. The receiver further includes an inverter having an input terminal connected to the output of the receiver and having an output terminal connected to a gate terminal of the third gate device. The input of the receiver is capable of being pre-discharged to a low signal and the output of the receiver is capable of being pre-charged to a high signal for substantially instantaneous transmission of input signals received by the receiver.
摘要:
A high performance interconnect that utilizes dynamic driver technology is capable of reduced power operation during periods of low data switching activity. Circuitry is provided that limits the performance of an evaluation operation in the dynamic driver circuitry to clock cycles during which a present input bit of the interconnect differs from a previous input bit. Thus, the evaluation operation and subsequent precharge of the driver output is performed sparingly during periods of low data switching activity. An output circuit is also provided for decoding the data stream flowing through the interconnect at the receiver end thereof. Using the principles of the present invention, it is possible to achieve the performance advantages of dynamic drivers with the switching activity of interconnects that use static CMOS technology.
摘要:
A sense amplifier for reading memory cells in a SRAM, the sense amplifier comprising two gate-biased pMOSFETs, each corresponding to a selected bitline. The gates of the two gate-biased pMOSFETs have their gates biased to a bias voltage, their sources coupled to the selected bitlines via column-select transistors, and their drains coupled via pass transistors to the two ports of two cross-coupled inverters, the cross-coupled inverters forming a latch. After a selected bitline pair has been pre-charged and the pre-charge phase ends, one of the two gate-biased pMOSFETs quickly goes into its subthreshold region as one of the bitlines discharges through its corresponding memory cell, thereby cutting off the bitline's capacitance from the sense amplifier. When the pass transistors are enabled, the other of the two pMOSFETs allows a significant bitline charge to transfer via its corresponding pass transistor to its corresponding port, whereas a relatively much smaller charge is transferred to the other port. This charge transfer scheme allows a differential voltage to quickly develop at the ports, thereby providing a fast latch and read operation with reduced power consumption. Bitline voltage swing may also be reduced to reduce power consumption.
摘要:
A domino logic circuit contained within an integrated circuit includes a dynamic logic circuit and an intermediate logic circuit. The intermediate logic circuit includes a pull-up transistor having a source terminal coupled to a source voltage line and an n-block transistor having a source terminal connected to a low ground voltage line.
摘要:
A system for measuring the stability of a power signal from a power supply includes a threshold violation detector. The threshold violation detector includes a comparator and an indicator. The comparator has a power signal input, a threshold signal input, and a comparison result output, and is configured to compare the power signal on the power signal input with a threshold on the threshold signal input to present a comparison result signal on the comparison result output. The indicator has a threshold violation output and a comparison input that receives the comparison result signal from the comparator. The indicator presents a threshold violation signal on the threshold violation output when the comparison result signal indicates that the power signal has violated the threshold.
摘要:
Embodiments of the present invention relate to memory circuits with heavily loaded bit-lines, and where either the effect of leakage current in the read access or pass transistors is reduced, or leakage current is reduced.
摘要:
A novel circuit technique for reducing leakage currents through the read-path of large register files in which a negative gate-source voltage is forced on a critical pass transistor between a cell read transistor and a local bitline such that when the cell is in a first state, the leakage current from a dynamic node of the cell read transistor is reduced. The reduced leakage current increases the robustness and performance of the read operation.
摘要:
A voltage-level converter and a method of converting a first logic voltage level to a second logic voltage level are described. In one embodiment, a voltage-level converter connects a first logic unit connected to a first supply voltage to a second logic unit connected to a second supply voltage. The voltage-level converter includes at least one transistor connected to the second supply voltage. The at least one transistor has a threshold voltage whose absolute value is greater-than-or-about-equal to the absolute value of the difference between the second supply voltage and the first supply voltage. In an alternative embodiment, a method for converting a first logic voltage level to a second logic voltage level includes transmitting a logic signal from a logic unit having an output voltage swing of between a first voltage level and a second voltage level, receiving the logic signal at a logic circuit having a pull-up transistor and an output voltage swing between a third voltage level and a fourth voltage level, and turning off the pull-up transistor when the logic signal has a value slightly greater than the difference between the third voltage level and the first voltage level.