公开(公告)号：US20180233367A1

公开(公告)日：2018-08-16

申请号：US15951495

申请日：2018-04-12

Applicant: Axcelis Technologies, Inc.

Inventor： Marvin Farley ,  Mike Ameen ,  Causon Ko-Chuan Jen

IPC: H01L21/265 ,  H01J37/20 ,  C23C14/54 ,  H01L21/67 ,  C23C14/48 ,  H01L21/677 ,  H01J37/317

CPC classification number: H01L21/26513 ,  C23C14/48 ,  C23C14/541 ,  H01J37/20 ,  H01J37/3171 ,  H01J2237/2001 ,  H01J2237/31701 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67213 ,  H01L21/67742

Abstract: An ion implantation system has a first chamber and a process chamber with a heated chuck. A controller transfers the workpiece between the heated chuck and first chamber and selectively energizes the heated chuck first and second modes. In the first and second modes, the heated chuck is heated to a first and second temperature, respectively. The first temperature is predetermined. The second temperature is variable, whereby the controller determines the second temperature based on a thermal budget, an implant energy, and/or an initial temperature of the workpiece in the first chamber, and generally maintains the second temperature in the second mode. Transferring the workpiece from the heated chuck to the first chamber removes implant energy from the process chamber in the second mode. Heat may be further transferred from the heated chuck to a cooling platen by a transfer of the workpiece therebetween to sequentially cool the heated chuck.

公开(公告)号：US09558914B2

公开(公告)日：2017-01-31

申请号：US14631066

申请日：2015-02-25

Applicant: Axcelis Technologies, Inc.

Inventor： Marvin Farley ,  Takao Sakase ,  Joseph Foley

IPC: H01J37/08 ,  H01J37/304 ,  H01J37/317 ,  H01J37/32

CPC classification number: H01J37/304 ,  H01J37/3171 ,  H01J37/32412 ,  H01J2237/0041 ,  H01J2237/0203 ,  H01J2237/24507 ,  H01J2237/304 ,  H01J2237/31701 ,  H01L22/14

Abstract: A charge monitor having a Langmuir probe is provided, wherein a positive and negative charge rectifier are operably coupled to the probe and configured to pass only a positive and negative charges therethrough, respectively. A positive current integrator is operably coupled to the positive charge rectifier, wherein the positive current integrator is biased via a positive threshold voltage, and wherein the positive current integrator is configured to output a positive dosage based, at least in part, on the positive threshold voltage. A negative current integrator is operably coupled to the negative charge rectifier, wherein the negative current integrator is biased via a negative threshold voltage, and wherein the negative current integrator is configured to output a negative dosage based, at least in part, on the negative threshold voltage. A positive charge counter and a negative charge counter are configured to respectively receive the output from the positive current integrator and negative current integrator in order to provide a respective cumulative positive charge value and cumulative negative charge value associated with the respective positive charge and negative charge.

Abstract translation: 提供具有朗缪尔探针的电荷监测器，其中正和负电荷整流器可操作地耦合到探针并且被配置为分别仅通过正和负电荷。 正电流积分器可操作地耦合到正电荷整流器，其中正电流积分器经由正阈值电压偏置，并且其中正电流积分器被配置为至少部分地基于正阈值输出正剂量 电压。 负电流积分器可操作地耦合到负电荷整流器，其中负电流积分器经由负阈值电压被偏置，并且其中负电流积分器被配置为基于至少部分地基于负阈值输出负剂量 电压。 配置正电荷计数器和负电荷计数器以分别接收来自正电流积分器和负电流积分器的输出，以便提供与相应的正电荷和负电荷相关联的相应的累积正电荷值和累积负电荷值。

公开(公告)号：US20160247664A1

公开(公告)日：2016-08-25

申请号：US14631066

申请日：2015-02-25

Applicant: Axcelis Technologies, Inc.

Inventor： Marvin Farley ,  Takao Sakase ,  Joseph Foley

IPC: H01J37/304 ,  H01J37/317

CPC classification number: H01J37/304 ,  H01J37/3171 ,  H01J37/32412 ,  H01J2237/0041 ,  H01J2237/0203 ,  H01J2237/24507 ,  H01J2237/304 ,  H01J2237/31701 ,  H01L22/14

Abstract: A charge monitor having a Langmuir probe is provided, wherein a positive and negative charge rectifier are operably coupled to the probe and configured to pass only a positive and negative charges therethrough, respectively. A positive current integrator is operably coupled to the positive charge rectifier, wherein the positive current integrator is biased via a positive threshold voltage, and wherein the positive current integrator is configured to output a positive dosage based, at least in part, on the positive threshold voltage. A negative current integrator is operably coupled to the negative charge rectifier, wherein the negative current integrator is biased via a negative threshold voltage, and wherein the negative current integrator is configured to output a negative dosage based, at least in part, on the negative threshold voltage. A positive charge counter and a negative charge counter are configured to respectively receive the output from the positive current integrator and negative current integrator in order to provide a respective cumulative positive charge value and cumulative negative charge value associated with the respective positive charge and negative charge.

Abstract translation: 提供具有朗缪尔探针的电荷监测器，其中正和负电荷整流器可操作地耦合到探针并且被配置为分别仅通过正和负电荷。 正电流积分器可操作地耦合到正电荷整流器，其中正电流积分器经由正阈值电压偏置，并且其中正电流积分器被配置为至少部分地基于正阈值输出正剂量 电压。 负电流积分器可操作地耦合到负电荷整流器，其中负电流积分器经由负阈值电压被偏置，并且其中负电流积分器被配置为基于至少部分地基于负阈值输出负剂量 电压。 配置正电荷计数器和负电荷计数器以分别接收来自正电流积分器和负电流积分器的输出，以便提供与相应的正电荷和负电荷相关联的相应的累积正电荷值和累积负电荷值。

公开(公告)号：US20150200073A1

公开(公告)日：2015-07-16

申请号：US14584252

申请日：2014-12-29

Applicant: Axcelis Technologies, Inc.

Inventor： Causon Ko-Chuan Jen ,  Marvin Farley

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/302 ,  H01J2237/047 ,  H01J2237/24514 ,  H01J2237/30483

Abstract: An ion implantation system and method for implanting ions at varying energies across a workpiece is provided. The system comprises an ion source configured to ionize a dopant gas into a plurality of ions and to form an ion beam. A mass analyzer is positioned downstream of the ion source and configured to mass analyze the ion beam. A deceleration/acceleration stage is positioned downstream of the mass analyzer. An energy filter may form part of the deceleration/acceleration stage or may positioned downstream of the deceleration/acceleration stage. An end station is provided having a workpiece support associated therewith for positioning the workpiece before the ion beam is also provided. A scanning apparatus is configured to scan one or more of the ion beam and workpiece support with respect to one another. One or more power sources are operably coupled to one or more of the ion source, mass analyzer, deceleration/acceleration stage, and energy filter. A controller is configured to selectively vary one or more voltages respectively supplied to one or more of the deceleration/acceleration stage and the energy filter concurrent with the scanning of the ion beam and/or workpiece support, wherein the selective variation of the one or more voltages is based, at least in part, on a position of the ion beam with respect to the workpiece support.

Abstract translation: 提供了一种用于在工件上以不同能量注入离子的离子注入系统和方法。 该系统包括被配置为将掺杂剂气体离子化成多个离子并形成离子束的离子源。 质量分析器位于离子源的下游并且被配置成质量分析离子束。 减速/加速阶段位于质量分析仪的下游。 能量过滤器可以形成减速/加速阶段的一部分，或者可以位于减速/加速阶段的下游。 设置终端站，其具有与其相关联的工件支撑件，用于在还提供离子束之前定位工件。 扫描装置被配置为相对于彼此扫描一个或多个离子束和工件支撑件。 一个或多个电源可操作地耦合到离子源，质量分析器，减速/加速阶段和能量过滤器中的一个或多个。 控制器被配置为选择性地改变与扫描离子束和/或工件支撑件同时提供给减速/加速阶段和能量过滤器中的一个或多个的一个或多个电压，其中一个或多个 电压至少部分地基于离子束相对于工件支撑件的位置。

公开(公告)号：US11545330B2

公开(公告)日：2023-01-03

申请号：US17318325

申请日：2021-05-12

Applicant: Axcelis Technologies, Inc.

Inventor： Wilhelm Platow ,  Paul Silverstein ,  Neil Bassom ,  Marvin Farley ,  David Sporleder

IPC: H01J27/02 ,  H01J27/08

Abstract: An ion source has an arc chamber having first and second ends and an aperture plate to enclose a chamber volume. An extraction aperture is disposed between the first and second ends. A cathode is near the first end of the arc chamber, and a repeller is near the second end. A generally U-shaped first bias electrode is on a first side of the extraction aperture within the chamber volume. A generally U-shaped second bias electrode is on a second side of the extraction aperture within the chamber volume, where the first and second bias electrodes are separated by a first distance proximate to the extraction aperture and a second distance distal from the extraction aperture. An electrode power supply provides a first and second positive voltage to the first and second bias electrodes, where the first and second positive voltages differ by a predetermined bias differential.

公开(公告)号：US20220367138A1

公开(公告)日：2022-11-17

申请号：US17318325

申请日：2021-05-12

Applicant: Axcelis Technologies, Inc.

Inventor： Wilhelm Platow ,  Paul Silverstein ,  Neil Bassom ,  Marvin Farley ,  David Sporleder

IPC: H01J27/02 ,  H01J27/08

Abstract: An ion source has an arc chamber having first and second ends and an aperture plate to enclose a chamber volume. An extraction aperture is disposed between the first and second ends. A cathode is near the first end of the arc chamber, and a repeller is near the second end. A generally U-shaped first bias electrode is on a first side of the extraction aperture within the chamber volume. A generally U-shaped second bias electrode is on a second side of the extraction aperture within the chamber volume, where the first and second bias electrodes are separated by a first distance proximate to the extraction aperture and a second distance distal from the extraction aperture. An electrode power supply provides a first and second positive voltage to the first and second bias electrodes, where the first and second positive voltages differ by a predetermined bias differential.

公开(公告)号：US11244800B2

公开(公告)日：2022-02-08

申请号：US17330801

申请日：2021-05-26

Applicant: Axcelis Technologies, Inc.

Inventor： Wilhelm Platow ,  Neil Bassom ,  Shu Satoh ,  Paul Silverstein ,  Marvin Farley

IPC: H01J1/52 ,  H01J1/02

Abstract: An ion source for forming a plasma has a cathode with a cavity and a cathode surface defining a cathode step. A filament is disposed within the cavity, and a cathode shield has a cathode shield surface at least partially encircling the cathode surface. A cathode gap is defined between the cathode surface and the cathode shield surface, where the cathode gap defines a tortured path for limiting travel of the plasma through the gap. The cathode surface can have a stepped cylindrical surface defined by a first cathode diameter and a second cathode diameter, where the first cathode diameter and second cathode diameter differ from one another to define the cathode step. The stepped cylindrical surface can be an exterior surface or an interior surface. The first and second cathode diameters can be concentric or axially offset.

公开(公告)号：US09218941B2

公开(公告)日：2015-12-22

申请号：US14584252

申请日：2014-12-29

Applicant: Axcelis Technologies, Inc.

Inventor： Causon Ko-Chuan Jen ,  Marvin Farley

IPC: G21K5/10 ,  H01J37/08 ,  H01J37/317 ,  H01J37/302

CPC classification number: H01J37/3171 ,  H01J37/302 ,  H01J2237/047 ,  H01J2237/24514 ,  H01J2237/30483

Abstract: An ion implantation system and method for implanting ions at varying energies across a workpiece is provided. The system comprises an ion source configured to ionize a dopant gas into a plurality of ions and to form an ion beam. A mass analyzer is positioned downstream of the ion source and configured to mass analyze the ion beam. A deceleration/acceleration stage is positioned downstream of the mass analyzer. An energy filter may form part of the deceleration/acceleration stage or may positioned downstream of the deceleration/acceleration stage. An end station is provided having a workpiece support associated therewith for positioning the workpiece before the ion beam is also provided. A scanning apparatus is configured to scan one or more of the ion beam and workpiece support with respect to one another. One or more power sources are operably coupled to one or more of the ion source, mass analyzer, deceleration/acceleration stage, and energy filter. A controller is configured to selectively vary one or more voltages respectively supplied to one or more of the deceleration/acceleration stage and the energy filter concurrent with the scanning of the ion beam and/or workpiece support, wherein the selective variation of the one or more voltages is based, at least in part, on a position of the ion beam with respect to the workpiece support.

Abstract translation: 提供了一种用于在工件上以不同能量注入离子的离子注入系统和方法。 该系统包括被配置为将掺杂剂气体离子化成多个离子并形成离子束的离子源。 质量分析器位于离子源的下游并且被配置成质量分析离子束。 减速/加速阶段位于质量分析仪的下游。 能量过滤器可以形成减速/加速阶段的一部分，或者可以位于减速/加速阶段的下游。 设置终端站，其具有与其相关联的工件支撑件，用于在还提供离子束之前定位工件。 扫描装置被配置为相对于彼此扫描一个或多个离子束和工件支撑件。 一个或多个电源可操作地耦合到离子源，质量分析器，减速/加速阶段和能量过滤器中的一个或多个。 控制器被配置为选择性地改变与扫描离子束和/或工件支撑件同时提供给减速/加速阶段和能量过滤器中的一个或多个的一个或多个电压，其中一个或多个 电压至少部分地基于离子束相对于工件支撑件的位置。

公开(公告)号：US20210398765A1

公开(公告)日：2021-12-23

申请号：US17330801

申请日：2021-05-26

Applicant: Axcelis Technologies, Inc.

Inventor： Wilhelm Platow ,  Neil Bassom ,  Shu Satoh ,  Paul Silverstein ,  Marvin Farley

IPC: H01J1/02 ,  H01J1/52

Abstract: An ion source for forming a plasma has a cathode with a cavity and a cathode surface defining a cathode step. A filament is disposed within the cavity, and a cathode shield has a cathode shield surface at least partially encircling the cathode surface. A cathode gap is defined between the cathode surface and the cathode shield surface, where the cathode gap defines a tortured path for limiting travel of the plasma through the gap. The cathode surface can have a stepped cylindrical surface defined by a first cathode diameter and a second cathode diameter, where the first cathode diameter and second cathode diameter differ from one another to define the cathode step. The stepped cylindrical surface can be an exterior surface or an interior surface. The first and second cathode diameters can be concentric or axially offset.

公开(公告)号：US10403503B2

公开(公告)日：2019-09-03

申请号：US15951495

申请日：2018-04-12

Applicant: Axcelis Technologies, Inc.

Inventor： Marvin Farley ,  Mike Ameen ,  Causon Ko-Chuan Jen

IPC: H01L21/265 ,  C23C14/48 ,  C23C14/54 ,  H01J37/20 ,  H01J37/317 ,  H01L21/67 ,  H01L21/677

Abstract: An ion implantation system has a first chamber and a process chamber with a heated chuck. A controller transfers the workpiece between the heated chuck and first chamber and selectively energizes the heated chuck first and second modes. In the first and second modes, the heated chuck is heated to a first and second temperature, respectively. The first temperature is predetermined. The second temperature is variable, whereby the controller determines the second temperature based on a thermal budget, an implant energy, and/or an initial temperature of the workpiece in the first chamber, and generally maintains the second temperature in the second mode. Transferring the workpiece from the heated chuck to the first chamber removes implant energy from the process chamber in the second mode. Heat may be further transferred from the heated chuck to a cooling platen by a transfer of the workpiece therebetween to sequentially cool the heated chuck.