公开(公告)号：US09196764B2

公开(公告)日：2015-11-24

申请号：US14730932

申请日：2015-06-04

Applicant: BAE Systems Information and Electronic Systems Integration Inc.

Inventor： Andrew TS Pomerene ,  Vu A. Vu ,  Robert L. Kamocsai

IPC: G02B6/42 ,  H01L31/18 ,  H01L31/02 ,  H01L21/02 ,  H01L31/0232

CPC classification number: H01L31/02327 ,  G02B6/122 ,  G02B6/4295 ,  H01L21/02532 ,  H01L31/0232 ,  H01L31/107 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1808

Abstract: A method for manufacturing a photodetector including growing a quantity of germanium within an optical pathway of a waveguide. The detection of a current caused by an interaction between the optical signal and the germanium is used to indicate the presence of an optical signal passing through the waveguide.

公开(公告)号：US20150017788A1

公开(公告)日：2015-01-15

申请号：US14327715

申请日：2014-07-10

Applicant: BAE Systems Information And Electronic Systems Integration Inc.

Inventor： Vu A. Vu

IPC: H01L21/02

CPC classification number: H01L21/02595 ,  G01J5/024 ,  G01J5/046 ,  G01J5/0853 ,  G01J5/20 ,  G01J2005/204 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02667 ,  H01L31/09 ,  H01L31/1812 ,  Y02E10/50

Abstract: A system and method for growing polycrystalline silicon-germanium film that includes mixing a GeH4 gas and a SiH4 gas to coat and grow polycrystalline silicon-germanium film on a silicon wafer. The GeH4 gas and the SiH4 gas are also heated and the pressure around the wafer is reduced to at least 2.5*10−3 mBar to produce the polycrystalline silicon-germanium film. The polycrystalline silicon-germanium film is then annealed to improve its resistivity.

Abstract translation: 一种用于生长多晶硅 - 锗膜的系统和方法，其包括混合GeH 4气体和SiH 4气体以在硅晶片上涂覆和生长多晶硅 - 锗膜。 还加热GeH 4气体和SiH 4气体，并且将晶片周围的压力降低至至少2.5×10 -3 mBar，以产生多晶硅 - 锗膜。 然后将多晶硅锗膜退火以提高其电阻率。

公开(公告)号：US09316790B2

公开(公告)日：2016-04-19

申请号：US14734666

申请日：2015-06-09

Applicant: BAE Systems Information and Electronic Systems Integration Inc.

Inventor： Robert L. Kamocsai ,  Vu A. Vu

IPC: G02B6/12 ,  G02B6/10 ,  G02F2/02 ,  G02B6/13 ,  G02B6/122

CPC classification number: G02B6/131 ,  G02B6/12 ,  G02B6/122 ,  G02B2006/12061

Abstract: A waveguide having a substrate, a first germanium sidewall and a second germanium sidewall. The waveguide is formed by growing the first germanium sidewall and second germanium sidewall on the substrate.

公开(公告)号：US09116290B1

公开(公告)日：2015-08-25

申请号：US13647128

申请日：2012-10-08

Applicant: BAE Systems Information and Electronic Systems Integration Inc.

Inventor： Robert L. Kamocsai ,  Vu A. Vu

IPC: G02B6/12 ,  G02B6/10 ,  G02F2/02

CPC classification number: G02B6/131 ,  G02B6/12 ,  G02B6/122 ,  G02B2006/12061

Abstract: A waveguide having a substrate, a first germanium sidewall and a second germanium sidewall. The waveguide is formed by growing the first germanium sidewall and second germanium sidewall on the substrate.

Abstract translation: 具有衬底，第一锗侧壁和第二锗侧壁的波导。 波导通过在基板上生长第一锗侧壁和第二锗侧壁而形成。

公开(公告)号：US09105772B2

公开(公告)日：2015-08-11

申请号：US13953050

申请日：2013-07-29

Applicant: BAE Systems Information and Electronic Systems Integration Inc.

Inventor： Andrew T S Pomerene ,  Vu A. Vu ,  Robert L. Kamocsai

IPC: G02B6/122 ,  G02B6/42 ,  H01L31/0232 ,  H01L31/18 ,  H01L31/107

CPC classification number: H01L31/02327 ,  G02B6/122 ,  G02B6/4295 ,  H01L21/02532 ,  H01L31/0232 ,  H01L31/107 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1808

Abstract: A method for manufacturing a photodetector including growing a quantity of germanium within an optical pathway of a waveguide. The detection of a current caused by an interaction between the optical signal and the germanium is used to indicate the presence of an optical signal passing through the waveguide.

Abstract translation: 一种用于制造光电检测器的方法，包括在波导的光学通路内生长一定量的锗。 由光信号和锗之间的相互作用引起的电流的检测用于指示通过波导的光信号的存在。