公开(公告)号：US10923529B2

公开(公告)日：2021-02-16

申请号：US16556108

申请日：2019-08-29

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Dapeng Xue

IPC: H01L27/15 ,  H01L27/12

Abstract: A display substrate, a method of manufacturing the same, and a display device are disclosed. The display substrate includes a driving substrate and a micro LED chip, wherein the micro LED chip includes a main body and an electrode pin, a TFT is arranged on the driving substrate, the micro LED chip is coupled to the TFT, and the display substrate further includes: a heat dissipation structure arranged between the micro LED chip and the TFT, wherein the heat dissipation structure is electrically coupled to the electrode pin of the micro LED chip.

公开(公告)号：US20200168661A1

公开(公告)日：2020-05-28

申请号：US16556108

申请日：2019-08-29

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Dapeng Xue

IPC: H01L27/15 ,  H01L27/12

Abstract: A display substrate, a method of manufacturing the same, and a display device are disclosed. The display substrate includes a driving substrate and a micro LED chip, wherein the micro LED chip includes a main body and an electrode pin, a TFT is arranged on the driving substrate, the micro LED chip is coupled to the TFT, and the display substrate further includes: a heat dissipation structure arranged between the micro LED chip and the TFT, wherein the heat dissipation structure is electrically coupled to the electrode pin of the micro LED chip.

公开(公告)号：US12127447B2

公开(公告)日：2024-10-22

申请号：US17502052

申请日：2021-10-15

Applicant: BOE Technology Group Co., Ltd.

Inventor： Dapeng Xue ,  Shuilang Dong ,  Ke Wang ,  Zhanfeng Cao

IPC: H01L51/52 ,  H01L25/075 ,  H01L25/16 ,  H01L51/56 ,  H10K50/858 ,  H10K59/124 ,  H10K59/80 ,  H10K71/00 ,  H01L33/44

CPC classification number: H10K59/124 ,  H01L25/0753 ,  H01L25/167 ,  H10K50/858 ,  H10K59/879 ,  H10K71/00 ,  H01L33/44

Abstract: A display substrate is provided, which includes a base substrate and a plurality of sub-pixels disposed on the base substrate. At least one sub-pixel includes a light transmittance region and a display region. The display region includes a circuit structure layer and a light-emitting element which are disposed on a base substrate, and the light-emitting element is connected with the circuit structure layer. The display substrate further includes a plurality of insulating layers disposed on the base substrate, and at least one insulating layer is hollowed out in the light transmittance region.

公开(公告)号：US10818797B2

公开(公告)日：2020-10-27

申请号：US16050294

申请日：2018-07-31

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Shengguang Ban ,  Zhanfeng Cao ,  Qi Yao ,  Dapeng Xue

IPC: H01L29/786 ,  H01L29/417 ,  H01L27/12 ,  H01L29/45 ,  H01L29/66 ,  H01L29/423 ,  H01L29/165 ,  H01L29/04 ,  H01L21/02

Abstract: The present application provides a thin film transistor and a method of fabricating the same, an array substrate and a display device. The thin film transistor includes: a gate electrode; an active layer including a first portion made of polysilicon and a second portion made of amorphous silicon; a source electrode and a drain electrode; and an ohmic contact layer. The second portion of the active layer is in contact with the source electrode and the drain electrode through the ohmic contact layer.

公开(公告)号：US12217651B2

公开(公告)日：2025-02-04

申请号：US17913258

申请日：2021-11-04

Applicant: BOE Technology Group Co., Ltd.

Inventor： Lizhong Wang ,  Ce Ning ,  Yunping Di ,  Binbin Tong ,  Chengfu Xu ,  Dapeng Xue ,  Shuilang Dong ,  Nianqi Yao

IPC: G09G3/20

Abstract: A display substrate, a manufacturing method thereof and a display apparatus are provided. In the present disclosure, a first transistor group with oxide semiconductor as an active layer material is disposed on a side of a second transistor group with polysilicon as an active layer material away from the base, and an area enclosed by orthographic projections of the transistors in the first transistor group on the base is overlapped with an area enclosed by orthographic projections of the transistors in the second transistor group on the base. Stable performance of the transistors included can be ensured in a manufacturing process of the first transistor group and the second transistor group located in different layers, and at the same time, an area occupied by the driving circuit can be reduced so as to decrease a frame width of a display apparatus or improve resolution of the display apparatus.

公开(公告)号：US11996017B2

公开(公告)日：2024-05-28

申请号：US17508866

申请日：2021-10-22

Applicant: BOE Technology Group Co., Ltd.

Inventor： Shuilang Dong ,  Xinhong Lu ,  Jingshang Zhou ,  Lei Zhao ,  Zhanfeng Cao ,  Dapeng Xue ,  Lizhong Wang ,  Guangcai Yuan

IPC: H01L33/62 ,  G09F9/302 ,  G09F9/33 ,  H10K77/10

CPC classification number: G09F9/3026 ,  G09F9/33 ,  H01L33/62 ,  H10K77/111

Abstract: The present application discloses an array substrate and a splicing screen. The array substrate provided by an embodiment of the present application includes: a flexible base, wherein the flexible base includes a display region, a first region and a second region, the display region and at least one of the first region and the second region are located in different planes, and the first region is located between the display region and the second region; a plurality of signal lines, arranged on the display region and the first region; a plurality of fan-out lines, arranged on the second region and connected with the plurality of signal lines in a one-to-one correspondence; and a buffer cushion, arranged on the first region, wherein an orthographic projection of the buffer cushion on the flexible base does not overlap with orthographic projections of the signal lines on the flexible base.

公开(公告)号：US11631362B2

公开(公告)日：2023-04-18

申请号：US17535127

申请日：2021-11-24

Applicant: BOE Technology Group Co., Ltd.

Inventor： Shuilang Dong ,  Shanshan Xu ,  Guangcai Yuan ,  Zhanfeng Cao ,  Ce Ning ,  Lizhong Wang ,  Dapeng Xue ,  Nianqi Yao

IPC: G09G3/3266 ,  G09G3/20 ,  G11C19/28

Abstract: A shift register unit includes an input sub-circuit, a pull-down node driving sub-circuit and an output sub-circuit. The pull-down node driving sub-circuit includes a first connection unit, a first voltage-reduction unit and a second connection unit, and configured to: under the control of the first voltage signal terminal and the pull-up node, transmit a first voltage signal from the first voltage signal terminal to the first pull-down node via the first connection unit, and reduce a voltage applied to the second connection unit via the first voltage-reduction unit; and transmit a second voltage signal from the second voltage signal terminal to the first pull-down node via the second connection unit under the control of the pull-up node.

公开(公告)号：US20210013243A1

公开(公告)日：2021-01-14

申请号：US16314298

申请日：2018-03-27

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Haixu Li ,  Zhanfeng Cao ,  Qi Yao ,  Dapeng Xue ,  Shuilang Dong

IPC: H01L27/12

Abstract: An array substrate, manufacturing method thereof, and a display device according to some arrangements of the present disclosure include: a first transistor and a second transistor; an active layer of the second transistor is disposed on a side of the interlayer dielectric layer of the first transistor away from the substrate; an insulating layer is disposed between the interlayer dielectric layer of the first transistor and the active layer of the second transistor, and the insulating layer has an ability to block hydrogen.

公开(公告)号：US12191400B2

公开(公告)日：2025-01-07

申请号：US18322981

申请日：2023-05-24

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Lizhong Wang ,  Tianmin Zhou ,  Hehe Hu ,  Xiaochun Xu ,  Nianqi Yao ,  Dapeng Xue ,  Shuilang Dong

IPC: H01L27/12 ,  H01L29/66 ,  H01L29/786

Abstract: An oxide thin film transistor includes: a gate electrode, a metal oxide active layer and a source-drain metal layer, which are on a base substrate. The metal oxide active layer includes a first metal oxide layer and a second metal oxide layer stacked on the first metal oxide layer in a direction away from the base substrate; the first metal oxide layer is a carrier transport layer; the second metal oxide layer is a carrier isolation layer; an electron transfer rate of the carrier transport layer is greater than an electron transfer rate of the carrier isolation layer. The first metal oxide layer includes a primary surface facing toward the base substrate and a primary surface away from the base substrate; the first metal oxide layer further includes a lateral surface around the primary surfaces; the second metal oxide layer covers the lateral surface of the first metal oxide layer.

公开(公告)号：US11925064B2

公开(公告)日：2024-03-05

申请号：US17468638

申请日：2021-09-07

Applicant: FUZHOU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD. ,  BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Dapeng Xue ,  Guangcai Yuan ,  Xiaochun Xu ,  Zheng Liu ,  Liangliang Li ,  Shuilang Dong ,  Lizhong Wang ,  Niangi Yao

IPC: H01L21/02 ,  H01L27/32 ,  H10K59/121 ,  H01L27/12 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786 ,  H10K59/12

CPC classification number: H10K59/1213 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L27/127 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H10K59/1201

Abstract: The present disclosure provides a display substrate including: a base substrate, and a thin film transistor, an oxygen supplementing functional layer and an oxygen containing layer formed on the base substrate. The thin film transistor includes: an active layer in direct contact with the oxygen containing layer, and the active layer includes an oxide semiconductor material. The oxygen supplementing functional layer includes a metal oxide material and serves as a first electrode of the display substrate. The oxygen containing layer is between the oxygen supplementing functional layer and the base substrate.