摘要:
A thin film transistor (TFT) having an active layer pattern, the active layer pattern including a first active layer pattern extending in a first direction; a second active layer pattern extending in the first direction and parallel to the first active layer pattern; and a third active layer pattern connecting a first end of the first active layer pattern to a first end of the second active layer pattern.
摘要:
Laser crystallization equipment includes a laser generator generating a laser beam, the laser beam being directed toward a processing target substrate, and a blade member over the processing target substrate, the blade member being configured to chop the laser beam with a predetermined width in two directions, wherein two ends of the laser beam chopped by the blade member are irradiated to the processing target substrate as diffraction light.
摘要:
The described technology relates generally to a thin film transistor comprising a gate electrode, a semiconductor layer and source/drain electrode, wherein the source/drain electrode is disposed in a range of a region in which the semiconductor layer is formed. Therefore, the present embodiments can provide a thin film transistor in which reliability is excellent because a change amount of threshold voltage is small.
摘要:
An organic light emitting diode display device and a method of manufacturing thereof, the device including a substrate, the substrate including a pixel part and a circuit part; a first semiconductor layer and a second semiconductor layer on the pixel part of the substrate; a gate insulating layer on an entire surface of the substrate; gate electrodes on the gate insulating layer, the gate electrodes corresponding to the first semiconductor layer and the second semiconductor layer, respectively; source/drain electrodes insulated from the gate electrodes, the source/drain electrodes being connected to the first and second semiconductor layers, respectively; a first electrode connected to the source/drain electrodes of the first semiconductor layer; an organic layer on the first electrode; a second layer on the organic layer; and a metal catalyst layer under the first semiconductor layer.
摘要:
A display device with the substrate divided into three areas. A semiconductor layer is formed in the first second areas and includes a channel area and source/drain areas; a gate insulating layer formed on the semiconductor layer in an area corresponding to the channel area; and a gate electrode formed on the gate insulating layer. The source/drain electrodes contact the source/drain areas, respectively; a pixel electrode is formed in the same layer but in a third area; an interlayer insulating layer is formed on a whole surface of the substrate including the formed structures; and a gate line is formed on the interlayer insulating layer and is electrically connected to a gate electrode of the first area through a via contact hole of the interlayer insulating layer.
摘要:
An organic light emitting diode display is disclosed. The organic light emitting diode display includes: a substrate including a first region and a second region, a first gate electrode formed over the first region, a second gate electrode formed over the second region, a first gate insulator formed on the first gate electrode, a second gate insulator formed on the second gate electrode, a first semiconductor layer formed on the first gate insulator, the first semiconductor layer including a first channel region, a second semiconductor layer formed on the second gate insulator, the second semiconductor layer including a second channel region, an interlayer insulator formed over the substrate and over at least part of the first and second semiconductor layers, a first etching stop layer formed over the first channel region and surrounded by the interlayer insulator, a second etching stop layer formed over the second channel region and surrounded by the interlayer insulator, a first source electrode and a first drain electrode contacting the first semiconductor layer through the interlayer insulator, and a second source electrode and a second drain electrode contacting the second semiconductor layer through the interlayer insulator.