Power device and resistance simulation method therefor, and power device simulation tool

    公开(公告)号:US11188700B2

    公开(公告)日:2021-11-30

    申请号:US17053550

    申请日:2019-08-15

    Abstract: The present application relates to a resistance simulation method for a power device, comprising: establishing an equivalent resistance model of a power device, wherein the connection relationship of N fingers is equivalent to N resistors Rb connected in parallel, input ends of adjacent resistors Rb are connected by means of a resistor Ra, output ends of adjacent resistors Rb are connected by means of a resistor Rc, R a = 1 N ⁢ R 0 , R c = 1 N ⁢ R 1 , and Rb=RDEV*N+RS+RD, wherein R0 and R1 are respectively resistances of a source metal strip and a drain metal strip, Rs is a metal resistor of a first intermediate layer connecting one source region to the source metal strip, RD is a metal resistor of a second intermediate layer connecting one drain region to the drain metal strip, and RDEV is the channel resistance of the power device; and calculating the resistance of the equivalent resistance model as the resistance of the power device.

    Analog-to-digital converter and clock generation circuit thereof

    公开(公告)号:US11711088B2

    公开(公告)日:2023-07-25

    申请号:US17419548

    申请日:2019-12-23

    Inventor: Chen Li Hao Wang

    CPC classification number: H03M1/002 H03M1/0624

    Abstract: An analog-to-digital converter and a clock generation circuit thereof are provided. The clock generation circuit comprises cascaded clock generation modules. The clock generation module at each stage is configured to generate a corresponding internal clock signal, and each stage of the clock generation module comprises a delay module and a logic gate module. The second input end of the N-th stage of the logic gate module is connected to the output end of the previous stage of the logic gate module, and the output end of the logic gate module is configured to output an internal clock, so that each stage of the clock generation module can generate one internal clock signal.

    Semiconductor memory
    4.
    发明授权

    公开(公告)号:US12165714B2

    公开(公告)日:2024-12-10

    申请号:US17916927

    申请日:2021-04-28

    Abstract: A semiconductor memory, comprising a negative voltage providing unit, which is used for providing a first negative voltage to a word line during a read operation, and comprises: a clamping unit that comprises an input end, a control end and an output end, wherein the input end is coupled to a common ground end of the memory, and the control end is used for receiving a first signal; an energy storage capacitor, a first end of which is coupled to the output end, and a second end that is used for receiving a second signal; and a negative voltage providing end which is coupled to the first end, wherein the clamping unit is used for: pulling the voltage at the output end to the voltage at the input end when the first signal is “0”; and clamping the output end at a clamping voltage when the first signal is “1”.

    Control system for synchronous rectifying transistor of LLC converter

    公开(公告)号:US11201557B2

    公开(公告)日:2021-12-14

    申请号:US16959116

    申请日:2018-12-29

    Abstract: A control system for synchronous rectifying transistor of LLC converter, the system comprising a voltage sampling circuit, a high-pass filtering circuit, a PI compensation and effective value detection circuit, and a control system taking a microcontroller (MCU) as a core. When the LLC converter is operating at a high frequency, a drain-source voltage VDS(SR) of the synchronous rectifying transistor delivers, via the sampling circuit, a change signal of the drain-source voltage during turn-off into the high-pass filtering circuit and the PI compensation and effective value detection circuit to obtain an effective value amplification signal of a drain-source voltage oscillation signal caused by parasitic parameters, and the current value is compared with a previously collected value via a control circuit taking a microcontroller (MCU) as a core, so as to change a turning-on time of the synchronous rectifying transistor in the next period.

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