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公开(公告)号：US11894458B2
公开(公告)日：2024-02-06
申请号：US17762206
申请日：2020-09-25
发明人： Jiaxing Wei , Qichao Wang , Kui Xiao , Dejin Wang , Li Lu , Ling Yang , Ran Ye , Siyang Liu , Weifeng Sun , Longxing Shi
IPC分类号： H01L29/78
CPC分类号： H01L29/7825
摘要： A lateral double-diffused metal oxide semiconductor field effect transistor (LDMOS), including: a trench gate including a lower part inside a trench and an upper part outside the trench, a length of the lower part in a width direction of a conducting channel being less than that of the upper part, and the lower part extending into a body region and having a depth less than that of the body region; an insulation structure arranged between a drain region and the trench gate and extending downwards into a drift region, a depth of the insulation structure being less than that of the drift region.
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公开(公告)号：US11515395B2
公开(公告)日：2022-11-29
申请号：US17624336
申请日：2020-09-25
发明人： Siyang Liu , Ningbo Li , Dejin Wang , Kui Xiao , Chi Zhang , Sheng Li , Xinyi Tao , Weifeng Sun , Longxing Shi
IPC分类号： H01L29/872 , H01L29/20 , H01L29/66 , H01L21/02 , H01L29/06 , H01L29/861
摘要： A gallium nitride power device, including: a gallium nitride substrate; cathodes; a plurality of gallium nitride protruding structures arranged on the gallium nitride substrate and between the cathodes, a groove is formed between adjacent gallium nitride protruding structures; an electron transport layer, covering a top portion and side surfaces of each of the gallium nitride protruding structures; a gallium nitride layer, arranged on the electron transport layer and filling each of the grooves; a plurality of second conductivity type regions, where each of the second conductivity type regions extends downward from a top portion of the gallium nitride layer into one of the grooves, and the top portion of each of the gallium nitride protruding structures is higher than a bottom portion of each of the second conductivity type regions; and an anode, arranged on the gallium nitride layer and the second conductivity type regions.
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公开(公告)号：US12119395B2
公开(公告)日：2024-10-15
申请号：US17762212
申请日：2020-08-26
发明人： Long Zhang , Jie Ma , Yan Gu , Sen Zhang , Jing Zhu , Jinli Gong , Weifeng Sun , Longxing Shi
IPC分类号： H01L29/739 , H01L29/06 , H01L29/08 , H01L29/10
CPC分类号： H01L29/7394 , H01L29/0623 , H01L29/0834 , H01L29/1095
摘要： An insulated gate bipolar transistor, comprising an anode second conductivity-type region and an anode first conductivity-type region provided on a drift region; the anode first conductivity-type region comprises a first region and a second region, and the anode second conductivity-type region comprises a third region and a fourth region, the dopant concentration of the first region being less than that of the second region, the dopant concentration of the third region being less than that of the fourth region, the third region being provided between the fourth region and a body region, the first region being provided below the fourth region, and the second region being provided below the third region and located between the first region and the body region.
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公开(公告)号：US11984813B2
公开(公告)日：2024-05-14
申请号：US17435789
申请日：2020-05-15
发明人： Shen Xu , Siyu Zhao , Congming Qi , Sen Zhang , Xiaoyu Shi , Weifeng Sun , Longxing Shi
CPC分类号： H02M3/33592 , H02M1/0058 , H02M1/38
摘要： A synchronous rectification control system and method for a quasi-resonant flyback converter are provided. The control system includes a switching transistor voltage sampling circuit configured to sample an output terminal voltage of the switching transistor to obtain a sampled voltage of the switching transistor; a sampling calculation module configured to obtain a dead-time based on the sampled voltage of the switching transistor and a preset relationship, the preset relationship being a correspondence between the duration of the sampled voltage of the switching transistor being below a first preset value and the dead-time during an on-time of a switching cycle of the switching transistor, the dead-time being a time from when the switching transistor is turned off to when the synchronous rectification transistor is turned on; and a control module configured to receive the dead-time and control switching of the synchronous rectification transistor based on the dead-time.
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公开(公告)号：US11777416B2
公开(公告)日：2023-10-03
申请号：US17418606
申请日：2019-12-19
发明人： Weifeng Sun , Huaxin Zhang , Hu Zhang , Menglin Yu , Siyu Zhao , Shen Xu , Longxing Shi
IPC分类号： H02M3/335
CPC分类号： H02M3/33592
摘要： A flyback converter and an output voltage acquisition method therefor and apparatus thereof, wherein the output voltage acquisition method comprises the following steps: acquiring the reference output voltage of a flyback converter; sampling the current output voltage of the flyback converter within a reset time of each switching period among M continuous switching periods of the flyback converter, wherein M is a positive integer; and according to the reference output voltage and the current output voltage, sampling a dichotomy to successively approximate the current output voltage until the M switching periods are finished, and acquiring the output voltage of the flyback converter.
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公开(公告)号：US11557959B2
公开(公告)日：2023-01-17
申请号：US16959015
申请日：2018-12-29
发明人： Shen Xu , Minggang Chen , Hao Wang , Jinyu Xiao , Wei Su , Weifeng Sun , Longxing Shi
摘要： An automatic dead zone time optimization system in a primary-side regulation flyback power supply continuous conduction mode (CCM), including a closed loop formed by a control system, including a single output digital to analog converter (DAC) midpoint sampling module, a digital control module, a current detection module, a dead zone time calculation module and a pulse-width modulation (PWM) driving module, and a controlled synchronous rectification primary-side regulation flyback converter. A primary-side current is sampled using a DAC Sampling mechanism to calculate a secondary-side average current, so as to obtain a primary-side average current and a secondary-side average current, in the case of CCM. A secondary-side current is input into the dead zone time calculation module to obtain a reasonable dead zone time; and the PWM driving module is jointly controlled by a primary-side regulation loop and the obtained dead zone time.
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7.发明授权公开(公告)号：US11336217B2
公开(公告)日：2022-05-17
申请号：US16958868
申请日：2018-12-29
发明人： Rui Zhong , Mingshu Zhang , Sen Zhang , Jinyu Xiao , Wei Su , Weifeng Sun , Longxing Shi
摘要： A method and an apparatus for reducing noise of a switched reluctance motor, includes: supplying a PWM signal as a driving signal to a driving circuit of a switched reluctance motor; and varying a carrier frequency of the PWM signal as an operation period of the switched reluctance motor varies; if the switched reluctance motor changes phase, determining that the operation period of the switched reluctance motor varies.
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公开(公告)号：US11770076B2
公开(公告)日：2023-09-26
申请号：US17420866
申请日：2020-06-19
发明人： Shen Xu , Minggang Chen , Wanqing Yang , Dejin Wang , Rui Jiang , Weifeng Sun , Longxing Shi
CPC分类号： H02M3/33569 , H02M1/342 , H02M1/38 , H02M3/33523
摘要： Disclosed are a system and method for controlling an active clamp flyback (ACF) converter. The system includes: a drive module configured to control turning-on or turning-off of a main switching transistor SL and a clamp switching transistor SH; a main switching transistor voltage sampling circuit configured to sample a voltage drop between an input terminal and an output terminal of the main switching transistor SL; a first comparator connected to the main switching transistor voltage sampling circuit and configured to determine whether a sampled first sampling voltage is a positive voltage or a negative voltage; and a dead time calculation module configured to adjust, according to an output of the first comparator and a main switching transistor control signal DUTYL of a current cycle, a clamp switching transistor control signal DUTYH of next cycle outputted by the drive module.
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公开(公告)号：US11742423B2
公开(公告)日：2023-08-29
申请号：US17761510
申请日：2020-08-20
发明人： Jing Zhu , Guichuang Zhu , Nailong He , Sen Zhang , Shaohong Li , Weifeng Sun , Longxing Shi
CPC分类号： H01L29/7824 , H01L29/086 , H01L29/0878 , H01L29/1095
摘要： A laterally double-diffused metal oxide semiconductor device is provided, including: a drift region (3) having a first conductivity type; a first body region (10) disposed on the drift region (3) and having a second conductivity type, the first conductivity type and the second conductivity type being opposite conductivity types; a first conductivity type region (13) disposed in the first body region (10); a second body region (12) disposed in the first conductivity type region (13) and having the second conductivity type; a source region (11) disposed in the second body region (12) and having the first conductivity type; and a contact region (9) disposed in the first body region (10) and having the second conductivity type.
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10.发明授权公开(公告)号：US11323039B2
公开(公告)日：2022-05-03
申请号：US16959001
申请日：2018-12-29
发明人： Weifeng Sun , Rongrong Tao , Hao Wang , Jinyu Xiao , Wei Su , Shen Xu , Longxing Shi
摘要： A method for improving the conversion efficiency of a CCM mode of a flyback resonant switch power supply, comprising: presetting a critical value Tset, calculating a time interval Ttap between adjacent zero points in the current connection time, outputting a shutdown signal at the zero points, and comparing the time interval Ttap with the preset critical value Tset; when Ttap>Tset, controlling the current shutdown time to be less than the shutdown time of the preceding cycle and outputting a start signal; when Ttap=0, controlling the current shutdown time to be greater than the shutdown time of the preceding cycle and outputting a start signal; and when 0
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