公开(公告)号：US5362681A

公开(公告)日：1994-11-08

申请号：US918665

申请日：1992-07-22

申请人： Carl M. Roberts, Jr. ,  Lewis H. Long ,  Paul A. Ruggerio

发明人： Carl M. Roberts, Jr. ,  Lewis H. Long ,  Paul A. Ruggerio

IPC分类号： H01L21/67 ,  B28D1/00 ,  B28D5/00 ,  B28D5/02 ,  B81C1/00 ,  H01L21/301 ,  H01L21/683 ,  H01L21/304

CPC分类号： B81C1/00888 ,  B28D1/003 ,  B28D5/0058 ,  B28D5/02 ,  H01L21/6836 ,  H01L2221/68322 ,  H01L2221/68327 ,  H01L2223/54453 ,  H01L2223/54466 ,  H01L2924/19041 ,  H01L2924/30105 ,  Y10S438/975

摘要： A method for separating individual dies from a wafer in which the wafer is adhered to a plastic film on a film carrier with the circuit side of the wafer facing the film and with circuit components exposed through a hole in the film. In this manner, the circuitry is protected from dust, and trauma from the sawing and cleaning processes because the circuitry is sealed between the film and the non-circuit side of the wafer.

摘要翻译： 一种用于将晶片与晶片粘附到胶片载体上的塑料膜的晶片分离的方法，其中晶片的电路侧面向膜并且电路元件通过膜中的孔露出。 以这种方式，电路被保护免受灰尘和来自锯切和清洁过程的损伤，因为电路被密封在薄膜和晶片的非电路侧之间。

公开(公告)号：US06538233B1

公开(公告)日：2003-03-25

申请号：US09992946

申请日：2001-11-06

申请人： W. David Lee ,  Paul A. Ruggerio

发明人： W. David Lee ,  Paul A. Ruggerio

IPC分类号： B23K2600

CPC分类号： B81C1/00484 ,  B23K26/40 ,  B23K2103/50 ,  B81C1/00968 ,  B81C2201/0143 ,  G01P15/0802 ,  G01P2015/0814

摘要： A method for releasing a structure from contact with a substrate in a micromechanical device includes the step of irradiating the structure with energy having parameters selected to produce a thermal gradient normal to the surface of the structure which causes upward bowing and release of the structure from the substrate. Preferably, the structure is irradiated with laser energy and, more preferably, the structure is irradiated with pulsed laser energy. The temperature gradient creates a strain gradient, due to thermal expansion, which causes the structure to bow upwardly. Support elements react and hold the structure up after the thermal gradient has disappeared.

摘要翻译： 用于在微机械装置中释放结构与基底接触的方法包括以下步骤：用能量进行照射，所述能量具有选择的参数，以产生与结构表面垂直的热梯度，这导致结构的向上弯曲和释放 基质。 优选地，用激光能量照射该结构，更优选地，用脉冲激光能量照射该结构。 温度梯度由于热膨胀而产生应变梯度，这导致结构向上弯曲。 支撑元件在热梯度消失后反应并保持结构。

公开(公告)号：US5043295A

公开(公告)日：1991-08-27

申请号：US368825

申请日：1989-06-20

申请人： Paul A. Ruggerio ,  Cynthia E. Anderson

发明人： Paul A. Ruggerio ,  Cynthia E. Anderson

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/822 ,  H01L23/532

CPC分类号： H01L28/24 ,  H01L23/53223 ,  H01L2924/0002 ,  Y10S148/136

摘要： Process of making an IC chip with thin film resistors, and IC chips made by such process, wherein a chip substrate first is covered with layers of thin film and interconnect material (with an intermediate barrier layer if needed), such layers being etched away in predetermined regions in accordance with the metal interconnect pattern, the remaining layered material being aligned vertically, and thereafter, in a section of the remaining material, etching away the interconnect material (and barrier material if used) to expose the thin film material to form a thin film resistor which is self-aligned withe the adjoining sections of interconnect conductors. The material in the predetermined regions may be etched by a dry-etch (plasma) or by a wet-etch.

摘要翻译： 制造具有薄膜电阻器的IC芯片和通过这种工艺制造的IC芯片的工艺，其中芯片基板首先被薄膜和互连材料层（如果需要具有中间阻挡层）覆盖，这样的层被蚀刻掉 根据金属互连图案的预定区域，剩余的层状材料垂直对准，然后在剩余材料的一部分中蚀刻互连材料（和阻挡材料（如果使用的话））以暴露薄膜材料以形成 薄膜电阻器与互连导体的相邻部分自对准。 预定区域中的材料可以通过干蚀刻（等离子体）或湿式蚀刻来蚀刻。