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    Method for achieving good adhesion between dielectric and organic material
    1.
    发明授权
    Method for achieving good adhesion between dielectric and organic material 有权

    公开(公告)号：US09908774B2

    公开(公告)日：2018-03-06

    申请号：US15024942

    申请日：2014-09-15

    Applicant: CAVENDISH KINETICS, INC.

    Inventor： Mickael Renault

    IPC: B81C1/00

    CPC classification number: B81C1/0038 ,  B81C1/00801 ,  B81C2201/0108 ,  B81C2201/0176 ,  B81C2201/053

    Abstract: The present invention generally relates to a method for forming a MEMS device and a MEMS device formed by the method. When forming the MEMS device, sacrificial material is deposited around the switching element within the cavity body. The sacrificial material is eventually removed to free the switching element in the cavity. The switching element has a thin dielectric layer thereover to prevent etchant interaction with the conductive material of the switching element. During fabrication, the dielectric layer is deposited over the sacrificial material. To ensure good adhesion between the dielectric layer and the sacrificial material, a silicon rich silicon oxide layer is deposited onto the sacrificial material before depositing the dielectric layer thereon.

    Method of forming planar sacrificial material in a MEMS device
    2.
    发明授权
    Method of forming planar sacrificial material in a MEMS device 有权
    在MEMS器件中形成平面牺牲材料的方法

    公开(公告)号：US09487395B2

    公开(公告)日：2016-11-08

    申请号：US14914504

    申请日：2014-09-02

    Applicant: CAVENDISH KINETICS, INC.

    Inventor： Brian I. Troy ,  James F. Bobey ,  Mickael Renault ,  Joseph Damian Gordon Lacey ,  Thomas L. Maguire

    IPC: H01L21/00 ,  B81C1/00 ,  H01G5/16

    CPC classification number: B81C1/00611 ,  H01G5/16

    Abstract: The present invention generally relates to a method of fabricating a MEMS device. In the MEMS device, a movable plate is disposed within a cavity such that the movable plate is movable within the cavity. To form the cavity, sacrificial material may be deposited and then the material of the movable plate is deposited thereover. The sacrificial material is removed to free the mov able plate to move within the cavity. The sacrificial material, once deposited, may not be sufficiently planar because the height difference between the lowest point and the highest point of the sacrificial material may be quite high. To ensure the movable plate is sufficiently planar, the planarity of the sacrificial material should be maximized. To maximize the surface planarity of the sacrificial material, the sacrificial material may be deposited and then conductive heated to permit the sacrificial material to reflow and thus, be planarized.

    Abstract translation: 本发明一般涉及制造MEMS器件的方法。 在MEMS装置中，可动板设置在空腔内，使得可移动板可在空腔内移动。 为了形成空腔，可以沉积牺牲材料，然后将可移动板的材料沉积在其上。 去除牺牲材料以使可移动板在空腔内移动。 由于牺牲材料的最低点和最高点之间的高度差可能相当高，牺牲材料一旦被沉积就可能不够平坦。 为了确保可动板足够平坦，牺牲材料的平面度应该被最大化。 为了使牺牲材料的表面平坦度最大化，可以沉积牺牲材料，然后进行导电加热，以使牺牲材料回流并因此被平坦化。

    Method for MEMS device fabrication and device formed
    3.
    发明授权
    Method for MEMS device fabrication and device formed 有权
    MEMS器件制造方法及器件形成

    公开(公告)号：US08921953B2

    公开(公告)日：2014-12-30

    申请号：US13946479

    申请日：2013-07-19

    Applicant: Cavendish Kinetics Inc.

    Inventor： Mickael Renault ,  Joseph Damian Gordon Lacey ,  Vikram Joshi ,  Thomas L. Maguire

    IPC: H01L29/84 ,  B81C1/00 ,  B81B3/00

    CPC classification number: B81B3/0072 ,  B81B2203/0118 ,  B81B2203/0307 ,  B81B2207/096 ,  B81C1/00039 ,  B81C1/00333 ,  B81C1/00476 ,  B81C2201/0132 ,  B81C2201/014 ,  B81C2203/0145 ,  B81C2203/0714

    Abstract: The present invention generally relates to methods for producing MEMS or NEMS devices and the devices themselves. A thin layer of a material having a lower recombination coefficient as compared to the cantilever structure may be deposited over the cantilever structure, the RF electrode and the pull-off electrode. The thin layer permits the etching gas introduced to the cavity to decrease the overall etchant recombination rate within the cavity and thus, increase the etching rate of the sacrificial material within the cavity. The etchant itself may be introduced through an opening in the encapsulating layer that is linearly aligned with the anchor portion of the cantilever structure so that the topmost layer of sacrificial material is etched first. Thereafter, sealing material may seal the cavity and extend into the cavity all the way to the anchor portion to provide additional strength to the anchor portion.

    Abstract translation: 本发明一般涉及用于生产MEMS或NEMS装置和装置本身的方法。 与悬臂结构相比，具有较低复合系数的材料的薄层可以沉积在悬臂结构，RF电极和拉出电极上。 薄层允许引入空腔的蚀刻气体降低空腔内的整体蚀刻剂复合速率，从而提高空腔内的牺牲材料的蚀刻速率。 蚀刻剂本身可以通过与悬臂结构的锚固部分线性对准的封装层中的开口引入，使得首先蚀刻最顶层的牺牲材料。 此后，密封材料可以密封空腔并且一直延伸到空腔中，以锚定部分，以向锚固部分提供额外的强度。

    MEMS RF-switch with controlled contact landing
    4.
    发明授权
    MEMS RF-switch with controlled contact landing 有权

    公开(公告)号：US10566163B2

    公开(公告)日：2020-02-18

    申请号：US15770705

    申请日：2016-11-15

    Applicant: CAVENDISH KINETICS, INC.

    Inventor： Robertus Petrus Van Kampen ,  Richard L. Knipe ,  Mickael Renault ,  Shibajyoti Ghosh Dastider ,  Jacques Marcel Muyango

    IPC: H01H59/00 ,  B81B3/00 ,  H01G5/16

    Abstract: A MEMS switch contains an RF electrode 102, pull-down electrodes 104 and anchor electrodes 108 located on a substrate 101. A plurality of islands 226 are provided in the pull-down electrode and electrically isolated therefrom. On top of the RF electrode is the RF contact 206 to which the MEMS-bridge 212, 214 forms an ohmic contact in the pulled-down state. The pull-down electrodes 104 are covered with a dielectric layer 202 to avoid a short-circuit between the bridge and the pull-down electrode. Contact stoppers 224 are disposed on the dielectric layer 202 at locations corresponding to the islands 226, and the resulting gap between the bridge and the dielectric layer in the pulled-down state reduces dielectric charging. In alternative embodiments, the contact stoppers are provide within the dielectric layer 202 or disposed on the islands themselves and under the dielectric layer. The switch provides good controllability of the contact resistance of MEMS switches over a wide voltage operating range.

    RF MEMS electrodes with limited grain growth
    5.
    发明授权
    RF MEMS electrodes with limited grain growth 有权

    公开(公告)号：US10301173B2

    公开(公告)日：2019-05-28

    申请号：US14914071

    申请日：2014-08-27

    Applicant: CAVENDISH KINETICS, INC.

    Inventor： Mickael Renault

    IPC: H01L29/84 ,  B81B7/00 ,  B81B3/00 ,  B81C1/00 ,  H01G5/18 ,  H01H59/00 ,  H01H1/00

    Abstract: The present invention generally relates to an RF MEMS DVC and a method for manufacture thereof. To ensure that undesired grain growth does not occur and contribute to an uneven RF electrode, a multilayer stack comprising an AlCu layer and a layer containing titanium may be used. The titanium diffuses into the AlCu layer at higher temperatures such that the grain growth of the AlCu will be inhibited and the switching element can be fabricated with a consistent structure, which leads to a consistent, predictable capacitance during operation.

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