摘要:
A method for inspecting a pattern formed on a substrate, includes the steps of moving a table along a first direction on which a substrate to be inspected is mounted, irradiating a converged electron beam on the substrate by scanning the converged electron beam along a second direction which is perpendicular to the first direction; detecting an electron radiated from the substrate by the irradiation of the converged electron beam in which the movement of the table and the scanning of the converged electron beam are synchronized; forming a digital image of the substrate from the detected electron; improving a quality of the digital image by filtering the digital image; and detecting a defect of a pattern formed on the substrate by using the improved quality digital image.
摘要:
A method and apparatus for inspecting a pattern, a first image of a first area on a sample is acquired by imaging the first area formed as a first pattern, and the first image is memorized. A second image of a second area on the sample is acquired by imaging the second area formed as a second pattern which is to be the same as the first pattern. A defect of the first pattern is detected by acquiring a differential image between the first image and the second image. The detection of the defect includes processing the differential image by using information of brightness corresponding to both of the first image and the second image.
摘要:
In a method of inspecting a defect and an apparatus thereof, an allowable range for a gradation value of a difference image is determined for each pixel from one pixel or less of position shift quantity between two images to be compared, a variation rate in a local gradation value of an image, and a representative value of the local gradation value. Then, by comparing the gradation value of the difference image with the allowable range determined for each pixel, a pixel, on which the gradation value of the difference image is within the allowable range, is judged to be an non-defective candidate and a pixel, on which the gradation value of the difference image is beyond the allowable range, is judged to be a defective candidate. This reduces the number of false information caused by mismatches attributed to an object to be inspected and an image detecting system, such as an infinitesimal difference in pattern configuration, a difference in the gradation value, a distortion of a pattern, and a position shift, thus making it possible to detect a more minute defect.
摘要:
A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.
摘要:
A circuit pattern inspection method and an apparatus therefore, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined changed state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.
摘要:
A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined changed state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.
摘要:
A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.
摘要:
To make possible the in-line inspection of a pattern of an insulating material.A patterned wafer 40 formed with a pattern by a resist film is placed on a specimen table 21 of a patterned wafer inspection apparatus 1 in opposed relation to a SEM 3. An electron beam 10 of a large current is emitted from an electron gun 11 and the pattern of the patterned wafer is scanned only once at a high scanning rate. The secondary electrons generated by this scanning from the patterned wafer are detected by a secondary electron detector 16 thereby to acquire an electron beam image. Using this electron beam image, the comparative inspection is conducted on the patterned wafer through an arithmetic operation unit 32 and a defect determining unit 33. Since an electron beam image of high contrast can be obtained by scanning an electron beam only once, a patterned wafer inspection method using a SEM can be implemented in the IC fabrication method.
摘要:
A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.
摘要:
A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with: the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.