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    Photoresist materials and photolithography processes
    3.
    发明授权
    Photoresist materials and photolithography processes 有权
    光刻胶材料和光刻工艺

    公开(公告)号：US08848163B2

    公开(公告)日：2014-09-30

    申请号：US13050251

    申请日：2011-03-17

    Applicant: Hsien-Cheng Wang ,  Chin-Hsiang Lin ,  Heng-Jen Lee ,  Ching-Yu Chang ,  Hua-Tai Lin ,  Burn Jeng Lin

    Inventor： Hsien-Cheng Wang ,  Chin-Hsiang Lin ,  Heng-Jen Lee ,  Ching-Yu Chang ,  Hua-Tai Lin ,  Burn Jeng Lin

    IPC: G03B27/52 ,  G03B27/42

    CPC classification number: G03F7/0397 ,  G03F7/0045 ,  G03F7/0392 ,  G03F7/30 ,  G03F7/38 ,  G03F7/70858 ,  Y10S430/106 ,  Y10S430/111

    Abstract: A lithography apparatus generates a tunable magnetic field to facilitate processing of photoresist. The lithography apparatus includes a chamber and a substrate stage in the chamber operable to hold a substrate. A magnetic module provides a magnetic field to the substrate on the substrate stage. The magnetic module is configured to provide the magnetic field in a tunable and alternating configuration with respect to its magnitude and frequency. The magnetic field is provided to have a gradient in magnitude along a Z-axis that is perpendicular to the substrate stage to cause magnetically-charged particles disposed over the substrate stage to move up and down along the Z-axis. The lithography apparatus also includes a radiation energy source and an objective lens configured to receive radiation energy from the radiation energy source and direct the radiation energy toward the substrate positioned on the substrate stage.

    Abstract translation: 光刻设备产生可调磁场以便于光致抗蚀剂的加工。 光刻设备包括腔室和腔室中的衬底台，其可操作以保持衬底。 磁性模块为衬底台上的衬底提供磁场。 磁模块被配置为相对于其幅度和频率提供可调和交替配置的磁场。 磁场被提供为具有沿垂直于衬底台的Z轴的幅度梯度，以使得设置在衬底台上的带磁性颗粒沿Z轴上下移动。 光刻设备还包括辐射能量源和物镜，其被配置为从辐射能量源接收辐射能量并将辐射能量引向位于衬底台上的衬底。

    Immersion lithography system using direction-controlling fluid inlets
    4.
    发明授权
    Immersion lithography system using direction-controlling fluid inlets 有权
    浸入光刻系统采用方向控制流体入口

    公开(公告)号：US08767178B2

    公开(公告)日：2014-07-01

    申请号：US13482879

    申请日：2012-05-29

    Applicant: Burn Jeng Lin ,  Ching-Yu Chang

    Inventor： Burn Jeng Lin ,  Ching-Yu Chang

    IPC: G03B27/42

    CPC classification number: G03B27/52 ,  G03F7/70341

    Abstract: Immersion lithography system and method using direction-controlling fluid inlets are described. According to one embodiment of the present disclosure, an immersion lithography apparatus includes a lens assembly having an imaging lens disposed therein and a wafer stage configured to retain a wafer beneath the lens assembly. The apparatus also includes a plurality of direction-controlling fluid inlets disposed adjacent to the lens assembly, each direction-controlling fluid inlet in the plurality of direction-controlling fluid inlets being configured to direct a flow of fluid beneath the lens assembly and being independently controllable with respect to the other fluid inlets in the plurality of direction-controlling fluid inlets.

    Abstract translation: 描述了使用方向控制流体入口的浸渍光刻系统和方法。 根据本公开的一个实施例，浸没式光刻设备包括具有设置在其中的成像透镜的透镜组件和被配置为将晶片保持在透镜组件下方的晶片台。 该装置还包括多个方向控制流体入口，其邻近透镜组件设置，多个方向控制流体入口中的每个方向控制流体入口构造成将透镜流体下方的流体引导到透镜组件的下方并且可独立控制 相对于多个方向控制流体入口中的其它流体入口。

    Immersion lithography system using a sealed wafer bath
    5.
    发明授权
    Immersion lithography system using a sealed wafer bath 有权
    浸没光刻系统使用密封晶圆槽

    公开(公告)号：US08208116B2

    公开(公告)日：2012-06-26

    申请号：US11670860

    申请日：2007-02-02

    Applicant: Burn Jeng Lin ,  Ching-Yu Chang

    Inventor： Burn Jeng Lin ,  Ching-Yu Chang

    IPC: G03B27/52

    CPC classification number: G03B27/52 ,  G03F7/70341

    Abstract: Immersion lithography system and method using a sealed wafer bottom are described. One embodiment is an immersion lithography apparatus including a lens assembly comprising an imaging lens and a wafer stage for retaining a wafer beneath the lens assembly and comprising a seal ring for sealing a gap between a bottom edge of a wafer retained on the wafer stage and the wafer stage. The apparatus further includes a fluid tank for retaining immersion fluid, the fluid tank situated with respect to the wafer stage for enabling full immersion of the wafer retained on the wafer stage in the immersion fluid; a cover disposed over at least a portion of the fluid tank for providing a temperature-controlled, fluid-rich environment within the fluid tank; and at least one directional flow control fluid inlet surrounding the imaging lens for directing immersion fluid toward an edge of the wafer retained on the wafer stage closest to the imaging lens.

    Abstract translation: 描述了浸没光刻系统和使用密封晶片底部的方法。 一个实施例是一种浸没光刻设备，其包括透镜组件，该透镜组件包括成像透镜和用于将晶片保持在透镜组件下方的晶片台，并且包括密封环，用于密封保留在晶片台上的晶片的底部边缘与 晶圆台。 该装置还包括用于保持浸没流体的流体箱，相对于晶片台定位的流体箱，用于使保留在晶片台上的晶片能够完全浸入浸没流体中; 设置在所述流体箱的至少一部分上的盖，用于在所述流体箱内提供温度控制的，富含流体的环境; 以及围绕成像透镜的至少一个方向流量控制流体入口，用于将浸没流体引向保持在最靠近成像透镜的晶片台上的晶片的边缘。

    Immersion Lithography System Using A Sealed Wafer Bath
    7.
    发明申请
    Immersion Lithography System Using A Sealed Wafer Bath 有权
    浸入式平版印刷系统使用密封晶片浴

    公开(公告)号：US20080106710A1

    公开(公告)日：2008-05-08

    申请号：US11670860

    申请日：2007-02-02

    Applicant: Burn Jeng Lin ,  Ching-Yu Chang

    Inventor： Burn Jeng Lin ,  Ching-Yu Chang

    IPC: G03B27/52

    CPC classification number: G03B27/52 ,  G03F7/70341

    Abstract: Immersion lithography system and method using a sealed wafer bottom are described. One embodiment is an immersion lithography apparatus including a lens assembly comprising an imaging lens and a wafer stage for retaining a wafer beneath the lens assembly and comprising a seal ring for sealing a gap between a bottom edge of a wafer retained on the wafer stage and the wafer stage. The apparatus further includes a fluid tank for retaining immersion fluid, the fluid tank situated with respect to the wafer stage for enabling full immersion of the wafer retained on the wafer stage in the immersion fluid; a cover disposed over at least a portion of the fluid tank for providing a temperature-controlled, fluid-rich environment within the fluid tank; and at least one directional flow control fluid inlet surrounding the imaging lens for directing immersion fluid toward an edge of the wafer retained on the wafer stage closest to the imaging lens.

    Abstract translation: 描述了浸没光刻系统和使用密封晶片底部的方法。 一个实施例是一种浸没式光刻设备，其包括透镜组件，该透镜组件包括成像透镜和用于将晶片保持在透镜组件下方的晶片台，并且包括密封环，用于密封保留在晶片台上的晶片的底部边缘与 晶圆台。 该装置还包括用于保持浸没流体的流体箱，相对于晶片台定位的流体箱，用于使保留在晶片台上的晶片能够完全浸入浸没流体中; 设置在所述流体箱的至少一部分上的盖，用于在所述流体箱内提供温度控制的，富含流体的环境; 以及围绕成像透镜的至少一个方向流量控制流体入口，用于将浸没流体引向保持在最靠近成像透镜的晶片台上的晶片的边缘。

    APPARATUS AND METHOD FOR IMMERSION LITHOGRAPHY
    8.
    发明申请
    APPARATUS AND METHOD FOR IMMERSION LITHOGRAPHY 有权
    装置和方法

    公开(公告)号：US20080002164A1

    公开(公告)日：2008-01-03

    申请号：US11697469

    申请日：2007-04-06

    Applicant: Ching-Yu Chang ,  Burn Jeng Lin

    Inventor： Ching-Yu Chang ,  Burn Jeng Lin

    IPC: G03B27/00 ,  B08B3/12

    CPC classification number: B08B3/12 ,  G03F7/2041 ,  G03F7/70341 ,  G03F7/70925

    Abstract: A lithography apparatus includes an imaging lens module, a substrate table positioned underlying the imaging lens module and configured to hold a substrate, and a cleaning module adapted to clean the lithography apparatus. The cleaning module comprises one inlet and one outlet for providing a cleaning fluid to and from a portion of the lithography apparatus to be cleaned, and an ultrasonic unit configured to provide ultrasonic energy to the cleaning fluid.

    Abstract translation: 光刻设备包括成像透镜模块，位于成像透镜模块下方并构造成保持基板的基板台，以及适于清洁光刻设备的清洁模块。 清洁模块包括一个入口和一个出口，用于向待清洁的光刻设备的一部分提供清洁流体;以及超声波单元，被配置为向清洁流体提供超声波能量。

    Photoresist and patterning process
    9.
    发明授权
    Photoresist and patterning process 有权
    光刻胶和图案化工艺

    公开(公告)号：US08956806B2

    公开(公告)日：2015-02-17

    申请号：US12562761

    申请日：2009-09-18

    Applicant: Chien-Wei Wang ,  Ching-Yu Chang ,  Burn Jeng Lin

    Inventor： Chien-Wei Wang ,  Ching-Yu Chang ,  Burn Jeng Lin

    IPC: G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  G03F7/20 ,  G03F7/30

    CPC classification number: G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/091 ,  G03F7/11

    Abstract: A method and material layer for forming a pattern are disclosed. The method includes providing a substrate; forming a first material layer over the substrate; forming a second material layer over the first material layer, wherein the second material layer comprises a photoacid generator and a photobase generator; and exposing one or more portions of the second material layer.

    Abstract translation: 公开了用于形成图案的方法和材料层。 该方法包括提供基板; 在所述衬底上形成第一材料层; 在所述第一材料层上形成第二材料层，其中所述第二材料层包括光酸产生剂和光碱产生剂; 以及暴露所述第二材料层的一个或多个部分。

    Apparatus and method for immersion lithography
    10.
    发明授权
    Apparatus and method for immersion lithography 有权
    浸没式光刻装置及方法

    公开(公告)号：US08564759B2

    公开(公告)日：2013-10-22

    申请号：US11697469

    申请日：2007-04-06

    Applicant: Ching-Yu Chang ,  Burn Jeng Lin

    Inventor： Ching-Yu Chang ,  Burn Jeng Lin

    IPC: G03B27/42

    CPC classification number: B08B3/12 ,  G03F7/2041 ,  G03F7/70341 ,  G03F7/70925

    Abstract: A lithography apparatus includes an imaging lens module, a substrate table positioned underlying the imaging lens module and configured to hold a substrate, and a cleaning module adapted to clean the lithography apparatus. The cleaning module comprises one inlet and one outlet for providing a cleaning fluid to and from a portion of the lithography apparatus to be cleaned, and an ultrasonic unit configured to provide ultrasonic energy to the cleaning fluid.

    Abstract translation: 光刻设备包括成像透镜模块，位于成像透镜模块下方并构造成保持基板的基板台，以及适于清洁光刻设备的清洁模块。 清洁模块包括一个入口和一个出口，用于向待清洁的光刻设备的一部分提供清洁流体;以及超声波单元，被配置为向清洁流体提供超声波能量。

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