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17 条记录 (耗时 0.03 秒)

    Photoresist materials and photolithography processes
    2.
    发明授权
    Photoresist materials and photolithography processes 有权
    光刻胶材料和光刻工艺

    公开(公告)号：US08848163B2

    公开(公告)日：2014-09-30

    申请号：US13050251

    申请日：2011-03-17

    申请人： Hsien-Cheng Wang ,  Chin-Hsiang Lin ,  Heng-Jen Lee ,  Ching-Yu Chang ,  Hua-Tai Lin ,  Burn Jeng Lin

    发明人： Hsien-Cheng Wang ,  Chin-Hsiang Lin ,  Heng-Jen Lee ,  Ching-Yu Chang ,  Hua-Tai Lin ,  Burn Jeng Lin

    IPC分类号： G03B27/52 ,  G03B27/42

    CPC分类号： G03F7/0397 ,  G03F7/0045 ,  G03F7/0392 ,  G03F7/30 ,  G03F7/38 ,  G03F7/70858 ,  Y10S430/106 ,  Y10S430/111

    摘要： A lithography apparatus generates a tunable magnetic field to facilitate processing of photoresist. The lithography apparatus includes a chamber and a substrate stage in the chamber operable to hold a substrate. A magnetic module provides a magnetic field to the substrate on the substrate stage. The magnetic module is configured to provide the magnetic field in a tunable and alternating configuration with respect to its magnitude and frequency. The magnetic field is provided to have a gradient in magnitude along a Z-axis that is perpendicular to the substrate stage to cause magnetically-charged particles disposed over the substrate stage to move up and down along the Z-axis. The lithography apparatus also includes a radiation energy source and an objective lens configured to receive radiation energy from the radiation energy source and direct the radiation energy toward the substrate positioned on the substrate stage.

    摘要翻译： 光刻设备产生可调磁场以便于光致抗蚀剂的加工。 光刻设备包括腔室和腔室中的衬底台，其可操作以保持衬底。 磁性模块为衬底台上的衬底提供磁场。 磁模块被配置为相对于其幅度和频率提供可调和交替配置的磁场。 磁场被提供为具有沿垂直于衬底台的Z轴的幅度梯度，以使得设置在衬底台上的带磁性颗粒沿Z轴上下移动。 光刻设备还包括辐射能量源和物镜，其被配置为从辐射能量源接收辐射能量并将辐射能量引向位于衬底台上的衬底。

    Structure and method for overlay marks
    6.
    发明授权
    Structure and method for overlay marks 有权
    叠加标记的结构和方法

    公开(公告)号：US09543406B2

    公开(公告)日：2017-01-10

    申请号：US13293650

    申请日：2011-11-10

    申请人： Hsien-Cheng Wang ,  Ming-Chang Wen ,  Chun-Kuang Chen ,  Yao-Ching Ku

    发明人： Hsien-Cheng Wang ,  Ming-Chang Wen ,  Chun-Kuang Chen ,  Yao-Ching Ku

    IPC分类号： H01L29/66 ,  G03F7/20 ,  H01L29/51

    CPC分类号： H01L22/32 ,  G03F7/70633 ,  H01L21/265 ,  H01L29/517 ,  H01L29/66545

    摘要： The overlay mark and method for making the same are described. In one embodiment, a semiconductor overlay structure includes gate stack structures formed on the semiconductor substrate and configured as an overlay mark, and a doped semiconductor substrate disposed on both sides of the gate stack structure that includes at least as much dopant as the semiconductor substrate adjacent to the gate stack structure in a device region. The doped semiconductor substrate is formed by at least three ion implantation steps.

    摘要翻译： 对覆盖标记及其制作方法进行说明。 在一个实施例中，半导体覆盖结构包括形成在半导体衬底上并被配置为覆盖标记的栅极叠层结构，以及设置在栅叠层结构两侧的掺杂半导体衬底，其至少包括与半导体衬底相邻的掺杂剂 到设备区域中的栅极堆栈结构。 掺杂半导体衬底通过至少三个离子注入步骤形成。

    METHOD AND APPARATUS FOR ENHANCED DIPOLE LITHOGRAPHY
    8.
    发明申请
    METHOD AND APPARATUS FOR ENHANCED DIPOLE LITHOGRAPHY 审中-公开
    用于增强DIPOLE LITHOGRAPHY的方法和装置

    公开(公告)号：US20110212403A1

    公开(公告)日：2011-09-01

    申请号：US12713335

    申请日：2010-02-26

    申请人： Ming-Jhih Kuo ,  Chun-Kuang Chen ,  Ya Hui Chang ,  Tommy Kuo ,  Hsien-Cheng Wang ,  Ko-Bin Kao

    发明人： Ming-Jhih Kuo ,  Chun-Kuang Chen ,  Ya Hui Chang ,  Tommy Kuo ,  Hsien-Cheng Wang ,  Ko-Bin Kao

    IPC分类号： G03F7/20 ,  G03B27/54

    CPC分类号： G03B27/54 ,  G03F7/70108

    摘要： Provided is a lithography system that includes a source for providing energy, an imaging system configured to direct the energy onto a substrate to form an image thereon, and a diffractive optical element (DOE) incorporated with the imaging system, the DOE having a first dipole located in a first direction and a second dipole located in the first direction or a second direction perpendicular the first direction. The first dipole includes a first energy-transmitting region spaced a first distance from a center of the DOE. The second dipole includes a second energy-transmitting region spaced a second distance from the center of the DOE. The first distance is greater than the second distance.

    摘要翻译： 提供了一种包括用于提供能量的源的光刻系统，被配置为将能量引导到衬底上以在其上形成图像的成像系统，以及结合有成像系统的衍射光学元件（DOE），DOE具有第一偶极子 位于第一方向上，第二偶极位于第一方向或垂直于第一方向的第二方向。 第一偶极子包括与DOE的中心间隔开第一距离的第一能量传输区域。 第二偶极子包括与DOE的中心隔开第二距离的第二能量传输区域。 第一距离大于第二距离。

    Exposure apparatus and method for photolithography process
    10.
    发明授权
    Exposure apparatus and method for photolithography process 有权
    用于光刻工艺的曝光装置和方法

    公开(公告)号：US08098364B2

    公开(公告)日：2012-01-17

    申请号：US11875471

    申请日：2007-10-19

    申请人： Vinvent Yu ,  Hsien-Cheng Wang ,  Hung-Chang Hsieh

    发明人： Vinvent Yu ,  Hsien-Cheng Wang ,  Hung-Chang Hsieh

    IPC分类号： G02F1/29 ,  G03B27/32 ,  G03B27/42 ,  G03B27/52 ,  G03B27/54 ,  G03B27/72

    CPC分类号： G03F7/70833 ,  G03F7/70258 ,  G03F7/70641 ,  G03F7/70858

    摘要： Provided is an exposure apparatus including a variable focusing device. The variable focusing device may include a transparent membrane that may be deformed in the presence of an electric field. The deformation of the transparent membrane may allow the focus length of a radiation beam to be modified. In an embodiment, the variable focusing device may be modulated such that a radiation beam having a first focus length is provided for a first position on an exposure target and a radiation beam having a second focus length is provided for a second position on the exposure target. A method and computer-readable medium are also provided.

    摘要翻译： 提供一种包括可变聚焦装置的曝光装置。 可变聚焦装置可以包括可能在存在电场的情况下变形的透明膜。 透明膜的变形可以允许改变辐射束的聚焦长度。 在一个实施例中，可调制可变聚焦装置，使得具有第一聚焦长度的辐射束用于曝光目标上的第一位置，并且为曝光目标上的第二位置提供具有第二焦距的辐射束 。 还提供了一种方法和计算机可读介质。