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公开(公告)号：US07989255B2
公开(公告)日：2011-08-02
申请号：US12464622
申请日：2009-05-12
申请人： Craig Edward Murphy , Salvatore Cina , Timothy Butler , Matthew Roberts , Nalinkumar Lallubhai Patel , Clare Louise Foden , Mark Levence Leadbeater , Daniel Alan Forsythe , Robert Sidney Archer , Nicholas de Brissac Baynes , Nathan Luke Phillips , Anil Raj Duggal , Jie Liu
发明人： Craig Edward Murphy , Salvatore Cina , Timothy Butler , Matthew Roberts , Nalinkumar Lallubhai Patel , Clare Louise Foden , Mark Levence Leadbeater , Daniel Alan Forsythe , Robert Sidney Archer , Nicholas de Brissac Baynes , Nathan Luke Phillips , Anil Raj Duggal , Jie Liu
IPC分类号： H01L21/00
CPC分类号： H01L51/0043 , H01L51/0003 , H01L51/0035 , H01L51/0037 , H01L51/0039 , H01L51/0059 , H01L51/5012 , H01L51/5048 , H01L51/56
摘要： A method of forming an optical device comprising the steps of: providing a substrate comprising a first electrode capable of injecting or accepting charge carriers of a first type; forming over the first electrode a first layer that is at least partially insoluble in a solvent by depositing a first semiconducting material that is free of cross-linkable vinyl or ethynyl groups and is, at the time of deposition, soluble in the solvent; forming a second layer in contact with the first layer and comprising a second semiconducting material by depositing a second semiconducting material from a solution in the solvent; and forming over the second layer a second electrode capable of injecting or accepting charge carriers of a second type wherein the first layer is rendered at least partially insoluble by one or more of heat, vacuum and ambient drying treatment following deposition of the first semiconducting material.
摘要翻译： 一种形成光学器件的方法，包括以下步骤：提供包括能够注入或接受第一类型的电荷载体的第一电极的衬底; 在第一电极上形成至少部分不溶于溶剂的第一层，该第一层通过沉积不含可交联乙烯基或乙炔基的第一半导体材料，并且在沉积时可溶于溶剂; 形成与所述第一层接触的第二层，并且通过从所述溶剂中的溶液沉积第二半导体材料而包括第二半导体材料; 以及在所述第二层上形成能够注入或接受第二种类型的电荷载体的第二电极，其中在所述第一半导体材料沉积之后，通过一种或多种热，真空和环境干燥处理使所述第一层至少部分地不溶解。
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公开(公告)号：US20090227052A1
公开(公告)日：2009-09-10
申请号：US12464622
申请日：2009-05-12
申请人： Craig Edward Murphy , Salvatore Cina , Timothy Butler , Matthew Roberts , Nalinkumar Lallubhai Patel , Clare Louise Foden , Mark Levence Leadbeater , Daniel Alan Forsythe , Robert Sidney Archer , Nicholas de Brissac Baynes , Nathan Luke Phillips , Anil Raj Duggal , Jie Liu
发明人： Craig Edward Murphy , Salvatore Cina , Timothy Butler , Matthew Roberts , Nalinkumar Lallubhai Patel , Clare Louise Foden , Mark Levence Leadbeater , Daniel Alan Forsythe , Robert Sidney Archer , Nicholas de Brissac Baynes , Nathan Luke Phillips , Anil Raj Duggal , Jie Liu
CPC分类号： H01L51/0043 , H01L51/0003 , H01L51/0035 , H01L51/0037 , H01L51/0039 , H01L51/0059 , H01L51/5012 , H01L51/5048 , H01L51/56
摘要： A method of forming an optical device comprising the steps of: providing a substrate comprising a first electrode capable of injecting or accepting charge carriers of a first type; forming over the first electrode a first layer that is at least partially insoluble in a solvent by depositing a first semiconducting material that is free of cross-linkable vinyl or ethynyl groups and is, at the time of deposition, soluble in the solvent; forming a second layer in contact with the first layer and comprising a second semiconducting material by depositing a second semiconducting material from a solution in the solvent; and forming over the second layer a second electrode capable of injecting or accepting charge carriers of a second type wherein the first layer is rendered at least partially insoluble by one or more of heat, vacuum and ambient drying treatment following deposition of the first semiconducting material.
摘要翻译： 一种形成光学器件的方法，包括以下步骤：提供包括能够注入或接受第一类型的电荷载体的第一电极的衬底; 在第一电极上形成至少部分不溶于溶剂的第一层，该第一层通过沉积不含可交联乙烯基或乙炔基的第一半导体材料，并且在沉积时可溶于溶剂; 形成与所述第一层接触的第二层，并且通过从所述溶剂中的溶液沉积第二半导体材料而包括第二半导体材料; 以及在所述第二层上形成能够注入或接受第二种类型的电荷载体的第二电极，其中在所述第一半导体材料沉积之后，通过一种或多种热，真空和环境干燥处理使所述第一层至少部分地不溶解。
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公开(公告)号：US07531377B2
公开(公告)日：2009-05-12
申请号：US10526804
申请日：2003-09-03
申请人： Craig Edward Murphy , Salvatore Cina , Timothy Butler , Matthew Roberts , Nalinkumar Lallubhai Patel , Clare Louise Foden , Mark Levence Leadbeater , Daniel Alan Forsythe , Robert Sidney Archer , Nicholas de Brissac Baynes , Nathan Luke Phillips , Anil Raj Duggal , Jie Liu
发明人： Craig Edward Murphy , Salvatore Cina , Timothy Butler , Matthew Roberts , Nalinkumar Lallubhai Patel , Clare Louise Foden , Mark Levence Leadbeater , Daniel Alan Forsythe , Robert Sidney Archer , Nicholas de Brissac Baynes , Nathan Luke Phillips , Anil Raj Duggal , Jie Liu
IPC分类号： H01L21/00
CPC分类号： H01L51/0043 , H01L51/0003 , H01L51/0035 , H01L51/0037 , H01L51/0039 , H01L51/0059 , H01L51/5012 , H01L51/5048 , H01L51/56
摘要： A method of forming an optical device comprising the steps of: providing a substrate comprising a first electrode capable of injecting or accepting charge carriers of a first type; forming over the first electrode a first layer that is at least partially insoluble in a solvent by depositing a first semiconducting material that is free of cross-linkable vinyl or ethynyl groups and is, at the time of deposition, soluble in the solvent; forming a second layer in contact with the first layer and comprising a second semiconducting material by depositing a second semiconducting material from a solution in the solvent; and forming over the second layer a second electrode capable of injecting or accepting charge carriers of a second type wherein the first layer is rendered at least partially insoluble by one or more of heat, vacuum and ambient drying treatment following deposition of the first semiconducting material.
摘要翻译： 一种形成光学器件的方法，包括以下步骤：提供包括能够注入或接受第一类型的电荷载体的第一电极的衬底; 在第一电极上形成至少部分不溶于溶剂的第一层，该第一层通过沉积不含可交联乙烯基或乙炔基的第一半导体材料，并且在沉积时可溶于溶剂; 形成与所述第一层接触的第二层，并且通过从所述溶剂中的溶液沉积第二半导体材料而包括第二半导体材料; 以及在所述第二层上形成能够注入或接受第二种类型的电荷载体的第二电极，其中在所述第一半导体材料沉积之后，通过一种或多种热，真空和环境干燥处理使所述第一层至少部分地不溶解。
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公开(公告)号：US08502356B2
公开(公告)日：2013-08-06
申请号：US12987724
申请日：2011-01-10
CPC分类号： H01L51/0516 , H01L51/0541 , H01L51/0545 , H01L51/0558
摘要： A method of forming an organic thin film transistor comprising source and drain electrodes with a channel region therebetween, a gate electrode, a dielectric layer disposed between the source and drain electrodes and the gate electrode, and an organic semiconductor disposed in at least the channel region between the source and drain electrodes, said method comprising: seeding a surface in the channel region with crystallization sites prior to deposition of the organic semiconductor; and depositing the organic semiconductor onto the seeded surface whereby the organic semiconductor crystallizes at the crystallization sites forming crystalline domains in the channel region.
摘要翻译： 一种形成有机薄膜晶体管的方法，该晶体管包括其间具有沟道区的源极和漏极，栅电极，设置在源电极和漏电极之间的电介质层和栅电极，以及设置在至少沟道区中的有机半导体 在所述源极和漏极之间，所述方法包括：在所述有机半导体沉积之前，在所述沟道区中的结晶部位的表面接种; 以及将有机半导体沉积到接种的表面上，由此有机半导体在结晶位置处结晶，形成沟道区中的晶畴。
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公开(公告)号：US6108473A
公开(公告)日：2000-08-22
申请号：US120394
申请日：1998-07-22
IPC分类号： G02B6/44
CPC分类号： G02B6/4483
摘要： An optical fiber cable structure includes a central kingwire and a plurality of fibers disposed to surround the kingwire. Microbending losses are accommodated by surrounding each individual fiber with a thin gel layer. The plurality of fibers are embedded in a solid (rubbery) polymer to provide the required strength. In one embodiment, the central cable structure is further surrounded by a layer of foamed polymer to provide for an absorbing interface between the solid polymer and the steel wire strands surrounding the cable structure.
摘要翻译： 光纤电缆结构包括中心金属丝和围绕金线布置的多根纤维。 通过用薄的凝胶层围绕每个单独的纤维来容纳微弯损失。 将多根纤维嵌入固体（橡胶状）聚合物中以提供所需的强度。 在一个实施方案中，中心电缆结构进一步被发泡聚合物层包围，以提供固体聚合物和围绕电缆结构的钢丝绳之间的吸收界面。
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公开(公告)号：US08829494B2
公开(公告)日：2014-09-09
申请号：US12933675
申请日：2009-03-12
CPC分类号： H01L51/105 , C08G61/126 , C08G2261/1424 , C08G2261/3223 , C08G2261/92 , H01L51/0022 , H01L51/0037 , H01L51/0541 , H01L51/0545 , H01L51/102
摘要： An organic thin film transistor comprising source and drain electrodes, an organic semiconductor disposed in a channel region between the source and drain electrodes, a gate electrode, and a dielectric disposed between the source and drain electrodes and the gate electrode, wherein the source electrode and the drain electrode comprise at least one different physical and/or material property from each other.
摘要翻译： 一种有机薄膜晶体管，包括源极和漏极，设置在源极和漏极之间的沟道区中的有机半导体，栅电极和设置在源极和漏极之间以及栅电极之间的电介质，其中源电极和 所述漏电极彼此具有至少一种不同的物理和/或材料性质。
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