公开(公告)号：US10199360B2

公开(公告)日：2019-02-05

申请号：US15449510

申请日：2017-03-03

Applicant: CREE, INC.

Inventor： Bernd Keller ,  Ashay Chitnis ,  Nicholas W. Medendorp, Jr. ,  James Ibbetson ,  Max Batres

IPC: H01L33/00 ,  H01L25/075 ,  H01L33/58 ,  H01L33/50 ,  H01L33/38 ,  H01L33/62 ,  H01L33/08 ,  H01L33/22 ,  H01L33/48 ,  H01L33/46

Abstract: A wire-bond free semiconductor device with two electrodes both of which are accessible from the bottom side of the device. The device is fabricated with two electrodes that are electrically connected to the oppositely doped epitaxial layers, each of these electrodes having leads with bottom-side access points. This structure allows the device to be biased with an external voltage/current source, obviating the need for wire-bonds or other such connection mechanisms that must be formed at the packaging level. Thus, features that are traditionally added to the device at the packaging level (e.g., phosphor layers or encapsulants) may be included in the wafer level fabrication process. Additionally, the bottom-side electrodes are thick enough to provide primary structural support to the device, eliminating the need to leave the growth substrate as part of the finished device.

公开(公告)号：US08772792B2

公开(公告)日：2014-07-08

申请号：US13974505

申请日：2013-08-23

Applicant: Cree, Inc.

Inventor： Steven P. DenBaars ,  Shuji Nakamura ,  Max Batres

IPC: H01L27/15

CPC classification number: H01L33/42 ,  H01L33/145 ,  H01L33/22 ,  H01L33/405

Abstract: An LED having a p-type layer of material with an associated p-contact, an n-type layer of material with an associated n-contact and an active region between the p-type layer and the n-type layer, includes a roughened emitting-side surface to further enhance light extraction.

Abstract translation: 具有p型层的具有相关联的p型接触的LED，具有相关联的n型接触的n型材料层和p型层与n型层之间的有源区的LED包括粗糙化层 发光侧表面进一步增强光提取。

公开(公告)号：US20170179088A1

公开(公告)日：2017-06-22

申请号：US15449510

申请日：2017-03-03

Applicant: CREE, INC.

Inventor： Bernd Keller ,  Ashay Chitnis ,  Nicholas W. Medendorp, JR. ,  James Ibbetson ,  Max Batres

IPC: H01L25/075 ,  H01L33/50 ,  H01L33/38 ,  H01L33/08 ,  H01L33/62

CPC classification number: H01L25/0756 ,  H01L33/08 ,  H01L33/22 ,  H01L33/385 ,  H01L33/46 ,  H01L33/486 ,  H01L33/50 ,  H01L33/505 ,  H01L33/58 ,  H01L33/62 ,  H01L2224/45139 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/45099

Abstract: A wire-bond free semiconductor device with two electrodes both of which are accessible from the bottom side of the device. The device is fabricated with two electrodes that are electrically connected to the oppositely doped epitaxial layers, each of these electrodes having leads with bottom-side access points. This structure allows the device to be biased with an external voltage/current source, obviating the need for wire-bonds or other such connection mechanisms that must be formed at the packaging level. Thus, features that are traditionally added to the device at the packaging level (e.g., phosphor layers or encapsulants) may be included in the wafer level fabrication process. Additionally, the bottom-side electrodes are thick enough to provide primary structural support to the device, eliminating the need to leave the growth substrate as part of the finished device.

公开(公告)号：US20130341663A1

公开(公告)日：2013-12-26

申请号：US13974505

申请日：2013-08-23

Applicant: Cree, Inc.

Inventor： Steven P. DenBaars ,  Shuji Nakamura ,  Max Batres

IPC: H01L33/42 ,  H01L33/40

CPC classification number: H01L33/42 ,  H01L33/145 ,  H01L33/22 ,  H01L33/405

Abstract: An LED having a p-type layer of material with an associated p-contact, an n-type layer of material with an associated n-contact and an active region between the p-type layer and the n-type layer, includes a roughened emitting-side surface to further enhance light extraction.

Abstract translation: 具有p型层的具有相关联的p型接触的LED，具有相关联的n型接触的n型材料层和p型层与n型层之间的有源区的LED包括粗糙化层 发光侧表面进一步增强光提取。