公开(公告)号：US20240072099A1

公开(公告)日：2024-02-29

申请号：US17822339

申请日：2022-08-25

Applicant: CreeLED, Inc.

Inventor： Michael Check ,  Steven Wuester ,  Seth Joseph Balkey ,  Nikolas Hall

IPC: H01L27/15

CPC classification number: H01L27/156

Abstract: Light-emitting diodes (LEDs) and more particularly LED chip structures are disclosed. LED chip structures include arrangements of one or more contacts, interconnects, contact structures, and/or reflective layers that effectively route electrically conductive paths while also reducing instances of closely spaced electrically charged metals of opposing polarities. Certain LED chip structures include electrically isolated metal-containing layers in various chip locations that allow for the presence of n-contact interconnects that are vertically arranged under or proximate to a p-contact. Certain contact structures include various arrangements, including segmented contact structures, that extend laterally to electrically couple groups of n-contact interconnects across various LED chip portions.

公开(公告)号：US20230395754A1

公开(公告)日：2023-12-07

申请号：US18302168

申请日：2023-04-18

Applicant: CreeLED, Inc.

Inventor： Michael Check ,  Justin White ,  Steven Wuester ,  Nikolas Hall ,  Kevin Haberern ,  Colin Blakely ,  Jesse Reiherzer

IPC: H01L33/38 ,  H01L33/48 ,  H01L25/075 ,  H01L33/62 ,  H01L33/46

CPC classification number: H01L33/382 ,  H01L33/486 ,  H01L25/0753 ,  H01L33/62 ,  H01L33/46

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly contact structures in LED chips for reducing voiding of bonding metals are disclosed. LED chips include active LED structures on carrier submounts and contact structures arranged to receive external electrical connections adjacent the active LED structures. Exemplary contact structures include contacts electrically coupled to active LED structures and dielectric structures beneath the contacts. Dielectric structures are arranged beneath portions of the contacts while still allowing electrical connections therethrough. Such dielectric structures may be provided as regions of dielectric material with spacings that control topography of underlying bonding metals to reduce voiding.

公开(公告)号：US20230395760A1

公开(公告)日：2023-12-07

申请号：US18302123

申请日：2023-04-18

Applicant: CreeLED, Inc.

Inventor： Michael Check ,  Justin White ,  Steven Wuester ,  Nikolas Hall ,  Kevin Haberern ,  Colin Blakely ,  Jesse Reiherzer

IPC: H01L33/54 ,  H01L33/62 ,  H01L33/60

CPC classification number: H01L33/54 ,  H01L33/62 ,  H01L33/60

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly passivation structures for LED chips are disclosed. LED chips include active LED structures, typically formed of epitaxial semiconductor layers, that include mesas with mesa sidewalls. Passivation structures include a passivation layer that bounds the mesa sidewalls. The passivation layer includes a material that is robust to etchants of active LED structures when forming the mesas to reduce damage in underlying portions of the LED chip. The passivation layer effectively forms a seal along the mesa sidewalls that reduces unwanted undercutting or erosion during etching, thereby providing improved reliability, reduced moisture ingress, and the flexibility to enable additional chip structures, such as light extraction features.