LIGHT-EMITTING DIODE PACKAGES WITH MATERIALS FOR REDUCING EFFECTS OF ENVIRONMENTAL INGRESS

    公开(公告)号:US20240355979A1

    公开(公告)日:2024-10-24

    申请号:US18304836

    申请日:2023-04-21

    Applicant: CreeLED, Inc.

    CPC classification number: H01L33/62 H01L33/56

    Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly LED packages with materials for reducing effects of environmental ingress are disclosed. Reactive materials are provided within LED packages that preferentially absorb environmental ingress away from other package elements, thereby extending operating lifetimes. Such reactive materials may be configured with redox potentials that are lower than the other package elements to more readily attract and react with environmental ingress that may enter LED packages under various operating environments. Arrangements of reactive materials are described relative to LED chips and corresponding electrical connections. Reactive materials may be formed as coatings, layers, pre-formed structures, and/or distributions of particles within LED packages.

    LASER ETCHING FOR LIGHT-EMITTING DIODE DEVICES AND RELATED METHODS

    公开(公告)号:US20240266462A1

    公开(公告)日:2024-08-08

    申请号:US18104966

    申请日:2023-02-02

    Applicant: CreeLED, Inc.

    CPC classification number: H01L33/007 H01L33/0093 H01L2933/0058

    Abstract: Solid-state lighting devices, and more particularly to laser etching light-emitting diode (LED) devices and related methods are disclosed. LED devices that use sapphire substrates are difficult to etch using conventional techniques, but laser etching and ablation of sapphire substrates overcomes these challenges. Laser etching a surface of the sapphire substrate can form light-extraction features that include structures formed in or on light-emitting surfaces of substrates. Light-extraction features may include repeating patterns of features with dimensions that, along with reduced substrate thicknesses, provide targeted emission profiles for flip-chip structures, such as Lambertian emission profiles. In some embodiments, laser ablation of the sapphire substrate can also be used to form trenches between active layer portions of an LED matrix to form pixels that reduce interference between the active layer portions. The trenches can further be filled with materials with light-altering properties to further refine the desired emission characteristics.

    LIGHT-EMITTING DIODE CHIP STRUCTURES
    5.
    发明公开

    公开(公告)号:US20240072099A1

    公开(公告)日:2024-02-29

    申请号:US17822339

    申请日:2022-08-25

    Applicant: CreeLED, Inc.

    CPC classification number: H01L27/156

    Abstract: Light-emitting diodes (LEDs) and more particularly LED chip structures are disclosed. LED chip structures include arrangements of one or more contacts, interconnects, contact structures, and/or reflective layers that effectively route electrically conductive paths while also reducing instances of closely spaced electrically charged metals of opposing polarities. Certain LED chip structures include electrically isolated metal-containing layers in various chip locations that allow for the presence of n-contact interconnects that are vertically arranged under or proximate to a p-contact. Certain contact structures include various arrangements, including segmented contact structures, that extend laterally to electrically couple groups of n-contact interconnects across various LED chip portions.

    LIGHT-EMITTING DIODE CHIP STRUCTURES WITH ELECTRICALLY INSULATING SUBSTRATES AND RELATED METHODS

    公开(公告)号:US20230361249A1

    公开(公告)日:2023-11-09

    申请号:US18308323

    申请日:2023-04-27

    Applicant: CreeLED, Inc.

    CPC classification number: H01L33/385 H01L33/20

    Abstract: Light-emitting diode (LED) chips and, more particularly, structures of LED chips with electrically insulating substrates and related methods are disclosed. LED chips include at least one opening that extends through a substrate to provide an electrical pathway to an active LED structure. Another electrical connection may be provided on the active LED structure in a position that forms a vertical contact arrangement. The at least one opening may extend through the substrate and into a portion of the active LED structure to provide increased surface area for the electrical connection. Additional LED chip structures include another opening on the active LED structure that is registered with the opening in the substrate, and electrical connections to a same layer of the active LED structure may be provided within each opening. Related methods include laser drilling the at least one opening in the substrate.

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