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公开(公告)号：US20230395760A1
公开(公告)日：2023-12-07
申请号：US18302123
申请日：2023-04-18
申请人： CreeLED, Inc.
发明人： Michael Check , Justin White , Steven Wuester , Nikolas Hall , Kevin Haberern , Colin Blakely , Jesse Reiherzer
摘要： Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly passivation structures for LED chips are disclosed. LED chips include active LED structures, typically formed of epitaxial semiconductor layers, that include mesas with mesa sidewalls. Passivation structures include a passivation layer that bounds the mesa sidewalls. The passivation layer includes a material that is robust to etchants of active LED structures when forming the mesas to reduce damage in underlying portions of the LED chip. The passivation layer effectively forms a seal along the mesa sidewalls that reduces unwanted undercutting or erosion during etching, thereby providing improved reliability, reduced moisture ingress, and the flexibility to enable additional chip structures, such as light extraction features.
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2.发明公开公开(公告)号：US20230395754A1
公开(公告)日：2023-12-07
申请号：US18302168
申请日：2023-04-18
申请人： CreeLED, Inc.
发明人： Michael Check , Justin White , Steven Wuester , Nikolas Hall , Kevin Haberern , Colin Blakely , Jesse Reiherzer
IPC分类号： H01L33/38 , H01L33/48 , H01L25/075 , H01L33/62 , H01L33/46
CPC分类号： H01L33/382 , H01L33/486 , H01L25/0753 , H01L33/62 , H01L33/46
摘要： Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly contact structures in LED chips for reducing voiding of bonding metals are disclosed. LED chips include active LED structures on carrier submounts and contact structures arranged to receive external electrical connections adjacent the active LED structures. Exemplary contact structures include contacts electrically coupled to active LED structures and dielectric structures beneath the contacts. Dielectric structures are arranged beneath portions of the contacts while still allowing electrical connections therethrough. Such dielectric structures may be provided as regions of dielectric material with spacings that control topography of underlying bonding metals to reduce voiding.
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公开(公告)号：US20210217931A1
公开(公告)日：2021-07-15
申请号：US17220051
申请日：2021-04-01
申请人： CreeLED, Inc.
发明人： Justin White
摘要： Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly contact structures for LED chips are disclosed. LED chips as disclosed herein may include contact structure arrangements that have reduced impact on areas of active LED structures within the LED chips. Electrical connections between an n-contact and an n-type layer may be arranged outside of a perimeter edge or a perimeter corner of the active LED structure. N-contact interconnect configurations are disclosed that form electrical connections between n-contacts and n-type layers of LED chips outside of lateral boundaries of the active LED structures. By electrically contacting n-type layers outside of the lateral boundaries of the active LED structures, LED chips are provided with improved current spreading and improved brightness.
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公开(公告)号：US11870009B2
公开(公告)日：2024-01-09
申请号：US17396160
申请日：2021-08-06
申请人： CreeLED, Inc.
CPC分类号： H01L33/24 , H01L33/382 , H01L33/405 , H01L33/46 , H01L33/22 , H01L33/32
摘要： Light-emitting diodes (LEDs), and more particularly edge structures for light shaping in LED chips are disclosed. Edge structures may include a repeating pattern of features that is formed along one or more mesa sidewalls of active LED structure mesas. Such active LED structure mesas may include a p-type layer, an active layer, and at least a portion of an n-type layer. Features of the repeating pattern may be configured with a size and/or shape to promote redirection of laterally propagating light from the active layer at the mesa sidewalls. In this manner, light that may otherwise escape the LED chip at the mesa sidewalls may be redirected toward an intended emission direction for the LED chip. Certain aspects include reflective structures that are provided on the active LED structures mesas and are further arranged to extend past the active LED structure mesas to cover the repeating pattern of features.
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公开(公告)号：US20230395756A1
公开(公告)日：2023-12-07
申请号：US18302106
申请日：2023-04-18
申请人： CreeLED, Inc.
发明人： Michael Check , Justin White , Steven Wuester , Kevin Haberern , Colin Blakely , Jesse Reiherzer
CPC分类号： H01L33/387 , H01L33/46 , H01L33/325
摘要： Solid-state lighting devices including light-emitting diode (LED) chips and more particularly interconnect structures for improved LED chip performance are disclosed. Interconnect structures are disclosed within LED chips that are structured to increase perimeter contact areas within localized LED chip areas without substantial increases to overall areas occupied by the interconnect structures. By increasing contact perimeters of interconnects within a certain area, increased current injection efficiency may be provided. Interconnect structures for increased current injection are disclosed for both n-type layers and p-type layers. Interconnect structures may include patterned dielectric materials within interconnect openings and corresponding interconnects that are formed around the patterned dielectric materials. Additional interconnect structures include nested patterns and extensions that provide enhanced adhesion along LED chip perimeters.
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公开(公告)号：US20220199589A1
公开(公告)日：2022-06-23
申请号：US17538078
申请日：2021-11-30
申请人： CreeLED, Inc.
发明人： Peter Scott Andrews , David Suich , Kevin Haberern , Justin White
IPC分类号： H01L25/075 , H01L33/00 , H01L33/50
摘要： Pixelated-LED chips include substrate sidewalls with sidewall involutions and/or increased sidewall surface area regions to affect light extraction therefrom. A LED lighting device incorporates a superstrate that supports lumiphoric material and includes sidewalls with sidewall involutions and/or increased sidewall surface area regions. Methods for fabricating sidewall features may include etching (e.g., deep etching) of substrate or superstrate materials, such as by using an etch mask having edges with non-linear shapes to produce and/or enhance sidewall involutions when an etchant is supplied through the etch mask to selectively consume substrate or superstrate material.
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公开(公告)号：US20230395747A1
公开(公告)日：2023-12-07
申请号：US18302149
申请日：2023-04-18
申请人： CreeLED, Inc.
发明人： Michael Check , Justin White , Steven Wuester , Kevin Haberern , Colin Blakely , Jesse Reiherzer
摘要： Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly current spreading layer structures for LED chips are disclosed. LED chips include active LED structures with current spreading layer arrangements relative to reflective structures that provide efficient current injection into the active LED structures while also providing improved light extraction. Current spreading layers include openings that allow portions of dielectric reflector layers to form interfaces with active LED structures adjacent the current spreading layers. Metal reflector layers are provided on the dielectric reflector layers, and reflective layer interconnects are formed through the dielectric reflector layers to contact portions of the current spreading layer.
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公开(公告)号：US20230037469A1
公开(公告)日：2023-02-09
申请号：US17396160
申请日：2021-08-06
申请人： CreeLED, Inc.
摘要： Light-emitting diodes (LEDs), and more particularly edge structures for light shaping in LED chips are disclosed. Edge structures may include a repeating pattern of features that is formed along one or more mesa sidewalls of active LED structure mesas. Such active LED structure mesas may include a p-type layer, an active layer, and at least a portion of an n-type layer. Features of the repeating pattern may be configured with a size and/or shape to promote redirection of laterally propagating light from the active layer at the mesa sidewalls. In this manner, light that may otherwise escape the LED chip at the mesa sidewalls may be redirected toward an intended emission direction for the LED chip. Certain aspects include reflective structures that are provided on the active LED structures mesas and are further arranged to extend past the active LED structure mesas to cover the repeating pattern of features.
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公开(公告)号：US11545595B2
公开(公告)日：2023-01-03
申请号：US17220051
申请日：2021-04-01
申请人： CreeLED, Inc.
发明人： Justin White
摘要： Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly contact structures for LED chips are disclosed. LED chips as disclosed herein may include contact structure arrangements that have reduced impact on areas of active LED structures within the LED chips. Electrical connections between an n-contact and an n-type layer may be arranged outside of a perimeter edge or a perimeter corner of the active LED structure. N-contact interconnect configurations are disclosed that form electrical connections between n-contacts and n-type layers of LED chips outside of lateral boundaries of the active LED structures. By electrically contacting n-type layers outside of the lateral boundaries of the active LED structures, LED chips are provided with improved current spreading and improved brightness.
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