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公开(公告)号：US20240072099A1
公开(公告)日：2024-02-29
申请号：US17822339
申请日：2022-08-25
申请人： CreeLED, Inc.
IPC分类号： H01L27/15
CPC分类号： H01L27/156
摘要： Light-emitting diodes (LEDs) and more particularly LED chip structures are disclosed. LED chip structures include arrangements of one or more contacts, interconnects, contact structures, and/or reflective layers that effectively route electrically conductive paths while also reducing instances of closely spaced electrically charged metals of opposing polarities. Certain LED chip structures include electrically isolated metal-containing layers in various chip locations that allow for the presence of n-contact interconnects that are vertically arranged under or proximate to a p-contact. Certain contact structures include various arrangements, including segmented contact structures, that extend laterally to electrically couple groups of n-contact interconnects across various LED chip portions.
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公开(公告)号：US20240063344A1
公开(公告)日：2024-02-22
申请号：US17889922
申请日：2022-08-17
申请人： CreeLED, Inc.
CPC分类号： H01L33/42 , H01L33/44 , H01L33/005
摘要： Solid-state lighting devices including light-emitting diodes (LEDs) and a semi-transparent metallic layer deposited on an LED chip that can dim a light output of the LED chip are disclosed. The thickness of the semi-transparent metal layer can be adjusted based on the desired dimming level. In an embodiment, the metallic layer can be deposited on top of a passivation layer over the LED structure, so that the metallic layer is not electrically coupled to the LED. The metallic layer can additionally cover the mesa sidewalls of the LED structure. The metallic layer can be titanium, or platinum, or other suitable metals in other embodiments. In an embodiment, the metallic layer can be deposited on to the passivation layer, where a length of time the metallic layer is deposited, can be based on the amount of dimming desired.
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公开(公告)号：US11870009B2
公开(公告)日：2024-01-09
申请号：US17396160
申请日：2021-08-06
申请人： CreeLED, Inc.
CPC分类号： H01L33/24 , H01L33/382 , H01L33/405 , H01L33/46 , H01L33/22 , H01L33/32
摘要： Light-emitting diodes (LEDs), and more particularly edge structures for light shaping in LED chips are disclosed. Edge structures may include a repeating pattern of features that is formed along one or more mesa sidewalls of active LED structure mesas. Such active LED structure mesas may include a p-type layer, an active layer, and at least a portion of an n-type layer. Features of the repeating pattern may be configured with a size and/or shape to promote redirection of laterally propagating light from the active layer at the mesa sidewalls. In this manner, light that may otherwise escape the LED chip at the mesa sidewalls may be redirected toward an intended emission direction for the LED chip. Certain aspects include reflective structures that are provided on the active LED structures mesas and are further arranged to extend past the active LED structure mesas to cover the repeating pattern of features.
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公开(公告)号：US20230261157A1
公开(公告)日：2023-08-17
申请号：US17669663
申请日：2022-02-11
申请人： CreeLED, Inc.
IPC分类号： H01L33/62 , H01L33/60 , H01L25/075
CPC分类号： H01L33/62 , H01L33/60 , H01L25/0753
摘要： Light-emitting diodes (LEDs), and more particularly contact structures of LED chips for improved current injection are disclosed. Exemplary LED chips include an n-contact structure that forms part of a cathode connection. N-contact structures are provided that form a grid structure that is electrically coupled at an n-type layer across the LED chip so that current is coupled to and spread along the n-type layer. N-contact structures are provided that reside along streets formed between active LED structure mesas. N-contact structures are provided that are embedded within one or more layers of an LED chip, including reflective layers and/or dielectric layers. By providing such n-contact structures along the n-type layer, increased contact between the n-type layer and the n-contact structure may promote improved current spreading and/or current injection while also providing increased thermal spreading in LED chips. Additionally, increased edge profiles of active LED structure mesas may provide increased light extraction.
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公开(公告)号：US20230037469A1
公开(公告)日：2023-02-09
申请号：US17396160
申请日：2021-08-06
申请人： CreeLED, Inc.
摘要： Light-emitting diodes (LEDs), and more particularly edge structures for light shaping in LED chips are disclosed. Edge structures may include a repeating pattern of features that is formed along one or more mesa sidewalls of active LED structure mesas. Such active LED structure mesas may include a p-type layer, an active layer, and at least a portion of an n-type layer. Features of the repeating pattern may be configured with a size and/or shape to promote redirection of laterally propagating light from the active layer at the mesa sidewalls. In this manner, light that may otherwise escape the LED chip at the mesa sidewalls may be redirected toward an intended emission direction for the LED chip. Certain aspects include reflective structures that are provided on the active LED structures mesas and are further arranged to extend past the active LED structure mesas to cover the repeating pattern of features.
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