公开(公告)号：US20210301421A1

公开(公告)日：2021-09-30

申请号：US17263149

申请日：2019-07-24

Applicant: DENSO CORPORATION ,  TOYO TANSO CO., LTD. ,  TOYOTA TSUSHO CORPORATION

Inventor： Masatake NAGAYA ,  Takahiro KANDA ,  Takeshi OKAMOTO ,  Satoshi TORIMI ,  Satoru NOGAMI ,  Makoto KITABATAKE

IPC: C30B29/36 ,  H01L21/02 ,  C30B33/12 ,  C30B11/02 ,  C30B33/10 ,  B28D5/04

Abstract: An object is to provide a SiC wafer in which a detection rate of an optical sensor can improved and a SiC wafer manufacturing method.
The method includes: a satin finishing process S141 of satin-finishing at least a back surface 22 of a SiC wafer 20; an etching process 21 of etching at least the back surface 22 of the SiC wafer 20 by heating under Si vapor pressure after the satin finishing process S141; and a mirror surface processing process S31 of mirror-processing a main surface 21 of the SiC wafer 20 after the etching process S21. Accordingly, it is possible to obtain a SiC wafer having the mirror-finished main surface 21 and the satin-finished back surface 22.

公开(公告)号：US20220285502A1

公开(公告)日：2022-09-08

申请号：US17632727

申请日：2020-08-05

Applicant: DENSO CORPORATION ,  KWANSEI GAKUIN EDUCATIONAL FOUNDATION ,  TOYOTA TSUSHO CORPORATION

Inventor： Masatake NAGAYA ,  Tadaaki KANEKO

IPC: H01L29/16 ,  H01L21/02 ,  H01L21/304 ,  H01L21/306

Abstract: An object to be solved by the present invention is to provide a new technology for producing a SiC substrate in which strain is removed and capable of achieving a flat surface as flat as a surface that has been subjected to CMP. The present invention, which solves the above object, is a method for producing a SiC substrate, the method including an etching step of etching a SiC substrate having arithmetic average roughness (Ra) of a surface of equal to or less than 100 nm in an atmosphere containing Si element and C element.

公开(公告)号：US20220130675A1

公开(公告)日：2022-04-28

申请号：US17463243

申请日：2021-08-31

Applicant: DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation ,  DISCO Corporation

Inventor： Masatake NAGAYA ,  Teruaki KUMAZAWA ,  Yuji NAGUMO ,  Kazuya HIRATA ,  Asahi NOMOTO

IPC: H01L21/268 ,  H01L21/78 ,  H01L21/02

Abstract: A method of manufacturing a chip formation wafer includes: forming an epitaxial film on a first main surface of a silicon carbide wafer to provide a processed wafer having one side adjacent to the epitaxial film and the other side; irradiating a laser beam into the processed wafer from the other side of the processed wafer so as to form an altered layer along a surface direction of the processed wafer; and separating the processed wafer with the altered layer as a boundary into a chip formation wafer having the one side of the processed wafer and a recycle wafer having the other side of the processed wafer. The processed wafer has a beveling portion at an outer edge portion of the processed wafer, and an area of the other side is larger than an area of the one side in the beveling portion.

公开(公告)号：US20210327702A1

公开(公告)日：2021-10-21

申请号：US17229356

申请日：2021-04-13

Applicant: DENSO CORPORATION ,  HAMAMATSU PHOTONICS K.K. ,  National University Corporation Tokai National Higher Education and Research System

Inventor： Jun KOJIMA ,  Chiaki SASAOKA ,  Shoichi ONDA ,  Masatake NAGAYA ,  Kazukuni HARA ,  Daisuke KAWAGUCHI

IPC: H01L21/02

Abstract: A method for manufacturing a gallium nitride semiconductor device includes: preparing a gallium nitride wafer; forming an epitaxial growth film on the gallium nitride wafer to provide a processed wafer having chip formation regions; perform a surface side process on a one surface side of the processed wafer; removing the gallium nitride wafer and dividing the processed wafer into a chip formation wafer and a recycle wafer; and forming an other surface side element component on an other surface side of the chip formation wafer.

公开(公告)号：US20210047750A1

公开(公告)日：2021-02-18

申请号：US16963521

申请日：2018-12-21

Applicant: SHOWA DENKO K.K. ,  DENSO CORPORATION

Inventor： Takanori KIDO ,  Masatake NAGAYA ,  Hidetaka TAKABA

IPC: C30B29/36 ,  C30B33/00 ,  B24B7/22 ,  H01L21/02

Abstract: A seed crystal for single crystal 4H-SiC growth of the present invention is a disk-shaped seed crystal for single crystal 4H-SiC growth having a diameter of more than 150 mm and having a thickness within a range of more than or equal to 1 mm and less than or equal to 0.03 times of the diameter, in which one surface on which the single crystal 4H-SiC is grown is a mirror surface and an Ra of the other surface is more than 10 nm, and an absolute value of magnitude of waviness in a state where the seed crystal is freely deformed so that an internal stress distribution is reduced is less than or equal to 12 μm.

公开(公告)号：US20240162092A1

公开(公告)日：2024-05-16

申请号：US18489999

申请日：2023-10-19

Applicant: DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation ,  MITSUBOSHI DIAMOND INDUSTRIAL CO., LTD.

Inventor： Yuji NAGUMO ,  Masashi UECHA ,  Masaru OKUDA ,  Masatake NAGAYA ,  Mitsuru KITAICHI ,  Akira MORI ,  Naoya KIYAMA ,  Masakazu TAKEDA

IPC: H01L21/784 ,  H01L21/3205

CPC classification number: H01L21/784 ,  H01L21/32051

Abstract: A manufacturing method of a semiconductor device includes: forming a plurality of element structures in a form of matrix on a first surface of a semiconductor wafer; forming a crack extending in a thickness direction of the semiconductor wafer along a boundary between the element structures adjacent to each other by pressing a pressing member against a second surface of the semiconductor wafer opposite to the first surface along the boundary; and dividing the semiconductor wafer along the boundary by pressing a dividing member against the semiconductor wafer on a first surface side along the boundary.

公开(公告)号：US20210327710A1

公开(公告)日：2021-10-21

申请号：US17229141

申请日：2021-04-13

Applicant: DENSO CORPORATION ,  HAMAMATSU PHOTONICS K.K. ,  National University Corporation Tokai National Higher Education and Research System

Inventor： Chiaki SASAOKA ,  Jun KOJIMA ,  Shoichi ONDA ,  Masatake NAGAYA ,  Kazukuni HARA ,  Daisuke KAWAGUCHI

IPC: H01L21/02 ,  H01L29/20 ,  H01L29/45 ,  H01L21/306 ,  H01L29/40

Abstract: A gallium nitride semiconductor device includes: a chip formation substrate made of gallium nitride and having one surface and an other surface opposite to the one surface; a one surface side element component disposed on the one surface and providing a component of an one surface side of a semiconductor element; and a metal film constituting a back surface electrode in contact with the other surface. The other surface has an irregularity provided by a plurality of convex portions with a trapezoidal cross section and a plurality of concave portions located between the convex portions; and an upper base surface of the trapezoidal cross section in each of the plurality of convex portions is opposed to the one surface.

公开(公告)号：US20190035684A1

公开(公告)日：2019-01-31

申请号：US16082570

申请日：2017-05-11

Applicant: DENSO CORPORATION

Inventor： Masatake NAGAYA ,  Jun KAWAI ,  Yosuke TOMITA

IPC: H01L21/78 ,  H01L29/16 ,  H01L23/544

Abstract: In a case where a back surface of an SiC semiconductor wafer, which is provided by a C surface, is covered with a back surface electrode and a scribe line cannot be confirmed, a reference line is formed before dicing. As a result, even when a processing upper surface from which dicing is carried out is a C surface, the dicing can be performed by estimating a scribe line with reference to the reference line. Accordingly, even if the semiconductor wafer is cut at a higher speed than that in the conventional art, a high-quality SiC semiconductor device with less chipping can be manufactured. A blade abrasion can be reduced, and costs can be also reduced.