公开(公告)号：US20210009046A1

公开(公告)日：2021-01-14

申请号：US16922030

申请日：2020-07-07

Applicant: DENSO CORPORATION

Inventor： Tatsuya KAMIYA ,  Itaru ISHII ,  Tomoki TANEMURA ,  Takashi AOKI ,  Tetsuya KATOH

IPC: B60R11/00 ,  G01S15/931 ,  G01S7/521

Abstract: An ultrasonic sensor includes: an ultrasonic element provided to transmit or receive an ultrasonic wave propagating along a directional axis; and an element housing case that includes a case diaphragm having a thickness direction along the directional axis. A resonant space is defined between the case diaphragm and the ultrasonic element for the propagating wave, by housing the ultrasonic element while separating the ultrasonic element from the case diaphragm. A horn shape is defined in the element housing case in which a width of the resonant space in a direction orthogonal to the directional axis is reduced as the resonant space extends in an axial direction parallel to the directional axis.

公开(公告)号：US20200322730A1

公开(公告)日：2020-10-08

申请号：US16837258

申请日：2020-04-01

Applicant: DENSO CORPORATION

Inventor： Tatsuya KAMIYA ,  Itaru ISHII ,  Tomoki TANEMURA ,  Takashi AOKI ,  Tetsuya KATOH

IPC: H04R17/02 ,  B81B7/00 ,  H04R19/00 ,  H04R19/04 ,  G01H11/08 ,  G01N29/12

Abstract: An ultrasonic sensor includes: an element storage case including a case-side diaphragm having a thickness direction along a directional axis; and an ultrasonic element accommodated in the element storage case and spaced apart from the case-side diaphragm. The ultrasonic element includes an element-side diaphragm having the thickness direction along the directional axis and provided by a thin part of a semiconductor substrate. The semiconductor substrate is arranged to provide a closed space between the case-side diaphragm and the element-side diaphragm. The semiconductor substrate is fixed and supported by the element-storage case.

公开(公告)号：US20160202132A1

公开(公告)日：2016-07-14

申请号：US14913067

申请日：2014-07-30

Applicant: DENSO CORPORATION

Inventor： Takashi INOUE ,  Kensuke HATA ,  Tetsuya KATOH ,  Kenichi SAKAI ,  Mayumi UNO ,  Junichi TAKEYA

IPC: G01L1/22 ,  H01L51/05

CPC classification number: G01L1/2293 ,  G01L1/18 ,  H01L29/22 ,  H01L29/84 ,  H01L51/057

Abstract: A load sensor is constituted by a rib and a vertical transistor including an organic semiconductor film, and a load measurement can be executed based on a change of a gap between a drain electrode and a source electrode which is a channel length of the vertical transistor. Therefore, a change of a current Ids is in a linear relationship to a load applied to the load sensor.

Abstract translation: 负载传感器由肋和包括有机半导体膜的垂直晶体管构成，并且可以基于作为垂直晶体管的沟道长度的漏电极和源电极之间的间隙的变化来执行负载测量。 因此，电流Ids的改变与施加到负载传感器的负载成线性关系。