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公开(公告)号:US11445304B2
公开(公告)日:2022-09-13
申请号:US16837258
申请日:2020-04-01
Applicant: DENSO CORPORATION
Inventor: Tatsuya Kamiya , Itaru Ishii , Tomoki Tanemura , Takashi Aoki , Tetsuya Katoh
Abstract: An ultrasonic sensor includes: an element storage case including a case-side diaphragm having a thickness direction along a directional axis; and an ultrasonic element accommodated in the element storage case and spaced apart from the case-side diaphragm. The ultrasonic element includes an element-side diaphragm having the thickness direction along the directional axis and provided by a thin part of a semiconductor substrate. The semiconductor substrate is arranged to provide a closed space between the case-side diaphragm and the element-side diaphragm. The semiconductor substrate is fixed and supported by the element-storage case.
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公开(公告)号:US11667247B2
公开(公告)日:2023-06-06
申请号:US16922030
申请日:2020-07-07
Applicant: DENSO CORPORATION
Inventor: Tatsuya Kamiya , Itaru Ishii , Tomoki Tanemura , Takashi Aoki , Tetsuya Katoh
IPC: B60R11/00 , G01S15/931 , G01S7/524 , G01S7/521
CPC classification number: B60R11/00 , G01S7/521 , G01S15/931 , B60R2011/004 , G01S2015/938
Abstract: An ultrasonic sensor includes: an ultrasonic element provided to transmit or receive an ultrasonic wave propagating along a directional axis; and an element housing case that includes a case diaphragm having a thickness direction along the directional axis. A resonant space is defined between the case diaphragm and the ultrasonic element for the propagating wave, by housing the ultrasonic element while separating the ultrasonic element from the case diaphragm. A horn shape is defined in the element housing case in which a width of the resonant space in a direction orthogonal to the directional axis is reduced as the resonant space extends in an axial direction parallel to the directional axis.
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公开(公告)号:US09658121B2
公开(公告)日:2017-05-23
申请号:US14913067
申请日:2014-07-30
Applicant: DENSO CORPORATION
Inventor: Takashi Inoue , Kensuke Hata , Tetsuya Katoh , Kenichi Sakai , Mayumi Uno , Junichi Takeya
CPC classification number: G01L1/2293 , G01L1/18 , H01L29/22 , H01L29/84 , H01L51/057
Abstract: A load sensor is constituted by a rib and a vertical transistor including an organic semiconductor film, and a load measurement can be executed based on a change of a gap between a drain electrode and a source electrode which is a channel length of the vertical transistor. Therefore, a change of a current Ids is in a linear relationship to a load applied to the load sensor.
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