公开(公告)号：US11056584B2

公开(公告)日：2021-07-06

申请号：US16693598

申请日：2019-11-25

Applicant: DENSO CORPORATION

Inventor： Kensuke Hata ,  Shinichi Hoshi ,  Hideo Matsuki ,  Youngshin Eum ,  Shigeki Takahashi

IPC: H01L29/778 ,  H01L29/417 ,  H01L29/423 ,  H01L29/80

Abstract: In a semiconductor device having an active region and an inactive region, the active region includes a channel forming layer with a heterojunction structure having first and second semiconductor layers, a gate structure portion having a MOS gate electrode, a source electrode and a drain electrode disposed on the second semiconductor layer with the gate structure portion interposed therebetween, a third semiconductor layer disposed at a position away from the drain electrode between the gate structure portion and the drain electrode and not doped with an impurity, a p-type fourth semiconductor layer disposed on the third semiconductor layer, and a junction gate electrode brought into contact with the fourth semiconductor layer. The junction gate electrode is electrically connected to the source electrode to have a same potential as a potential of the source electrode, and is disposed only in the active region.

公开(公告)号：US10062747B2

公开(公告)日：2018-08-28

申请号：US15573200

申请日：2016-06-14

Applicant: DENSO CORPORATION

Inventor： Youngshin Eum ,  Kazuhiro Oyama ,  Yasushi Higuchi ,  Shinichi Hoshi

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/06 ,  H01L29/778 ,  H01L29/812 ,  H01L29/20 ,  H01L29/423 ,  H01L29/417

CPC classification number: H01L29/06 ,  H01L29/0615 ,  H01L29/2003 ,  H01L29/41725 ,  H01L29/4236 ,  H01L29/42364 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/778 ,  H01L29/7786 ,  H01L29/78 ,  H01L29/812

Abstract: In a semiconductor device, an AlGaN layer includes a first AlGaN layer and a second AlGaN layer. The second AlGaN layer is positioned between a gate structure portion and a drain electrode and is divided into multiple parts in an arrangement direction in which the gate structure portion and the drain electrode are arranged. A second Al mixed crystal ratio of the second AlGaN layer is less than a first Al mixed crystal ratio of the first AlGaN layer. Accordingly, the semiconductor device is a normally-off-type device and is capable of restricting a decrease of a breakdown voltage and an increase of an on-resistance.

公开(公告)号：US12205984B2

公开(公告)日：2025-01-21

申请号：US17829791

申请日：2022-06-01

Applicant: DENSO CORPORATION

Inventor： Jun Saito ,  Keita Kataoka ,  Yusuke Yamashita ,  Yukihiko Watanabe ,  Katsuhiro Kutsuki ,  Youngshin Eum

IPC: H01L29/06 ,  H01L29/739

Abstract: A semiconductor device includes a semiconductor substrate, a top electrode in contact with a top surface of the semiconductor substrate, a bottom electrode in contact with a bottom surface of the semiconductor substrate, and an oxide film in contact with the top surface of the semiconductor substrate. The semiconductor substrate includes an element region and an outer peripheral region. The element region is a region where the top electrode is in contact with the top surface of the semiconductor substrate. The outer peripheral region is a region where the oxide film is in contact with the top surface of the semiconductor substrate, and is located between the element region and an outer peripheral end surface of the semiconductor substrate. The element region includes a semiconductor element connected between the top electrode and the bottom electrode. The outer peripheral region includes surface high-voltage-breakdown regions, deep high-voltage-breakdown regions, and a drift region.

公开(公告)号：US10714606B2

公开(公告)日：2020-07-14

申请号：US15753342

申请日：2016-09-05

Applicant: DENSO CORPORATION

Inventor： Youngshin Eum ,  Kazuhiro Oyama ,  Yasushi Higuchi ,  Yoshinori Tsuchiya ,  Shinichi Hoshi

IPC: H01L29/778 ,  H01L29/06 ,  H01L29/812 ,  H01L29/205 ,  H01L29/872 ,  H01L29/40 ,  H01L29/20 ,  H01L29/10 ,  H01L29/423

Abstract: A semiconductor device includes a conductive substrate, a channel forming layer, a first electrode, and a second electrode. The channel forming layer is located above the conductive substrate and includes at least one hetero-junction structure. The hetero-junction structure includes a first GaN-type semiconductor layer providing a drift region and a second GaN-type semiconductor layer having a bandgap energy greater than the first GaN-type semiconductor layer. A total fixed charge quantity of charges in the first GaN-type layer and the second GaN-type layer is from 0.5×1013 to 1.5×1013 cm−2. The charges in the first GaN-type layer and the second GaN-type layer include charges generated by the polarization in the first GaN-type layer. Accordingly, the semiconductor device capable of improving a break-down voltage and decreasing an on-resistance is obtained.

公开(公告)号：US10109727B2

公开(公告)日：2018-10-23

申请号：US15531015

申请日：2015-12-08

Applicant: DENSO CORPORATION

Inventor： Kazuhiro Oyama ,  Yasushi Higuchi ,  Seigo Oosawa ,  Masaki Matsui ,  Youngshin Eum

IPC: H01L29/66 ,  H01L29/778 ,  H01L29/786 ,  H01L29/06 ,  H01L29/51 ,  H01L29/40 ,  H01L29/423 ,  H01L29/20

Abstract: A semiconductor device includes a lateral switching device having: a substrate; a channel forming layer that has a heterojunction structure made of a GaN layer and an AlGaN layer and is formed with a recessed portion, on the substrate; a gate structure part that includes a gate insulating film and a gate electrode formed in the recessed portion; and a source electrode and a drain electrode on opposite sides of the gate structure part on the channel forming layer. The AlGaN layer includes a first AlGaN layer that has an Al mixed crystal ratio determining a two dimensional electron gas density, and a second AlGaN layer that has an Al mixed crystal ratio smaller than that of the first AlGaN layer to induce negative fixed charge, and is disposed in contact with the gate structure part and spaced from the source electrode and the drain electrode.