公开(公告)号：US20040187575A1

公开(公告)日：2004-09-30

申请号：US10771461

申请日：2004-02-05

Applicant: DENSO CORPORATION

Inventor： Minoru Murata ,  Toshiya Ikezawa ,  Tetsuro Yano

IPC: G01P015/00

CPC classification number: G01P15/125 ,  G01P2015/0814 ,  Y10S414/141

Abstract: A semiconductor dynamic sensor has a displacement portion, which is composed of a movable electrode and first and second fixed electrodes, formed in a semiconductor substrate. The movable electrode is displaced in response to applied acceleration, so that capacitance between the movable electrode and each of the first and second fixed electrodes changes. Therefore,the applied acceleration can be detected based on the capacitance change. A plurality of rectangular-shaped suction portions is provided at four corners on the surface of the semiconductor substrate. By sucking the suction portions using a collet check, the semiconductor dynamic sensor such can be transported without damaging the displacement portion.

Abstract translation: 半导体动态传感器具有形成在半导体衬底中的由可动电极和第一和第二固定电极组成的位移部分。 可移动电极响应于所施加的加速度而移位，使得可动电极与第一和第二固定电极中的每一个之间的电容发生变化。 因此，可以基于电容变化来检测所施加的加速度。 在半导体基板的表面的四个角设置有多个矩形的吸引部。 通过使用夹头检查吸引吸引部，可以输送半导体动态传感器而不损害位移部。

公开(公告)号：US20010029060A1

公开(公告)日：2001-10-11

申请号：US09861535

申请日：2001-05-22

Applicant: DENSO Corporation

Inventor： Tsuyoshi Fukada ,  Minekazu Sakai ,  Minoru Murata ,  Yukihiro Takeuchi ,  Seiki Aoyama

IPC: H01L021/00

CPC classification number: B81C1/00936 ,  B81B3/0005 ,  B81B2201/0235 ,  B81B2201/025 ,  B81B2203/0136 ,  B81B2203/033 ,  B81B2203/04 ,  B81C2201/0132 ,  B81C2201/053 ,  B81C2201/112 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  G01P2015/084

Abstract: In a method for manufacturing a semiconductor acceleration sensor, a movable portion including a mass portion and movable electrodes is formed in a single crystal silicon thin film provided on a silicon wafer through an insulation film by etching both the single crystal silicon thin film and the silicon wafer. In this case, the movable portion is finally defined at a movable portion defining step that is carried out in a vapor phase atmosphere. Accordingly, the movable portion is prevented from sticking to other regions due to etchant during the manufacture thereof.

Abstract translation: 在半导体加速度传感器的制造方法中，通过蚀刻单晶硅薄膜和硅两者，通过绝缘膜在设置在硅晶片上的单晶硅薄膜中形成包括质量部分和可移动电极的可移动部分 晶圆。 在这种情况下，可移动部分最终限定在在气相气氛中进行的可动部分限定步骤。 因此，在制造过程中，由于蚀刻剂，防止可动部分粘附到其它区域。