公开(公告)号：US07250893B2

公开(公告)日：2007-07-31

申请号：US11271039

申请日：2005-11-12

Applicant: Brian D. Todoroff ,  Douglas A. Webb

Inventor： Brian D. Todoroff ,  Douglas A. Webb

IPC: H03M1/12

CPC classification number: G06F3/0317 ,  H03M1/50

Abstract: A signal processing circuit and processing method are provided for measuring an analog signal from a photo-detector. Generally, the method includes steps of: (i) sampling and storing a characteristic of the signal at a first predetermined time following a reset of the circuit; (ii) sampling the characteristic of the signal at a second predetermined time following a reset or initialization of the circuit; (iii) determining a difference between the stored characteristic of the signal sampled at the first predetermined time and the characteristic of the signal sampled at the second predetermined time; and (iv) converting the determined difference to a digital value and determining a slope of the signal from the digital value and the difference between the first and second predetermined times. Thus, the measurement of the slope is independent of and substantially unaffected by absolute values of the characteristics measured at the first and second predetermined times.

Abstract translation: 提供信号处理电路和处理方法，用于测量来自光检测器的模拟信号。 通常，该方法包括以下步骤：（i）在电路复位之后的第一预定时间采样和存储信号的特性; （ii）在电路的复位或初始化之后的第二预定时间采样信号的特性; （iii）确定在第一预定时间采样的信号的存储特性与在第二预定时间采样的信号的特性之间的差; 以及（iv）将所确定的差值转换为数字值，并根据数字值和第一和第二预定时间之间的差确定信号的斜率。 因此，斜率的测量与第一和第二预定时间测量的特性的绝对值无关并且基本上不受影响。

公开(公告)号：US07247832B2

公开(公告)日：2007-07-24

申请号：US11223389

申请日：2005-09-09

Applicant: Douglas A. Webb

Inventor： Douglas A. Webb

IPC: G01J1/44 ,  G01N21/86 ,  G06M7/00 ,  G09G5/08 ,  H04N3/14 ,  G01J1/32

CPC classification number: G01J1/44

Abstract: A signal processor and processing method are provided for measuring current received from a photo-detector. Generally, the processor includes a transimpedance amplifier (TIA) to integrate a current received from a photo-detector in the optical navigation system to generate a voltage signal having a slope that is proportional to the received current, and a comparator having a first input coupled to an output of the TIA to receive the voltage signal, and a second, inverting, input coupled to a threshold voltage. The comparator is configured to compare the voltage signal to the threshold voltage and to generate an output pulse having a predetermined voltage and a duration or width that is a function of the received current.

公开(公告)号：US5768007A

公开(公告)日：1998-06-16

申请号：US712042

申请日：1996-09-11

Applicant: Richard Knipe ,  Rabah Mezenner ,  Douglas A. Webb

Inventor： Richard Knipe ,  Rabah Mezenner ,  Douglas A. Webb

IPC: G02B26/08 ,  G09G3/34 ,  H04N5/74 ,  G02B26/00

CPC classification number: G02B26/0833 ,  G02B26/0841 ,  G09G3/346 ,  H04N5/7458 ,  G09G2310/0251 ,  G09G2310/061 ,  H04N2005/7466

Abstract: A method of resetting the mirrors (11, 21) of the mirror elements of a digital micro-mechanical device (DMD) (10, 20). A bias voltage is applied to the mirror elements and the surface upon which they land, but is removed after the address voltage has been switched. (FIG. 4). Immediately before the bias is removed, a reset voltage is added to the bias voltage. The reset voltage signal is comprised of a number of pulses at a frequency that matches the resonant frequency of the mirrors. The magnitude of the reset voltage results in a total applied voltage that permits vibrational energy to build but that is insufficient to cause the mirrors to become unstuck until the end of the reset signal. In other words, the magnitude of the reset voltage is small relative to that of the bias voltage.

Abstract translation: 一种复位数字微机械装置（DMD）（10,20）的镜元件的反射镜（11,21）的方法。 偏置电压被施加到镜子元件和它们着陆的表面，但是在地址电压被切换之后被去除。 （图4）。 在去除偏压之前，将偏置电压加上复位电压。 复位电压信号包括与反射镜的谐振频率匹配的频率的多个脉冲。 复位电压的大小导致允许振动能量建立的总施加电压，但是这不足以导致反射镜在解除复位信号结束之前解锁。 换句话说，复位电压的大小相对于偏置电压的幅度小。

公开(公告)号：US07161518B1

公开(公告)日：2007-01-09

申请号：US10809978

申请日：2004-03-26

Applicant: Douglas A. Webb ,  Stephen Gaalema

Inventor： Douglas A. Webb ,  Stephen Gaalema

IPC: H03M1/82 ,  H02N1/00

CPC classification number: H02N1/006 ,  G09G3/2011 ,  G09G3/2014 ,  G09G3/3433 ,  G09G2300/0814 ,  G09G2300/0828 ,  G09G2300/0833 ,  G09G2300/0842 ,  G09G2310/027 ,  G09G2310/063

Abstract: In one embodiment, a micro electromechanical system (MEMS) driver circuit receives a pulse-width modulated (PWM) signal and uses it to control a voltage at a MEMS cell. The driver circuit further includes a current source, a capacitor, and a reset circuit that can discharge the capacitor. The voltage at the MEMS cell can be controlled in proportion to the pulse width of the PWM signal. In another embodiment disclosed, a MEMS driver circuit receives a first PWM signal and a second PWM signal. Each PWM signal is coupled to a current source. One current source can provide a course current control and the other current source can provide fine current control. The driver circuit can further include a capacitor and a reset circuit for discharging the capacitor. The voltage at the MEMS cell can be controlled in proportion to a summation of the first and second current sources. According to another aspect of the embodiments, a method of controlling a voltage at a MEMS cell is disclosed. The method includes the steps of receiving a PWM signal, controlling a current source with the PWM signal, and adjusting the voltage at the MEMS cell in proportion to a pulse width of the PWM signal.

Abstract translation: 在一个实施例中，微机电系统（MEMS）驱动器电路接收脉冲宽度调制（PWM）信号并使用其来控制MEMS单元处的电压。 驱动器电路还包括可以放电电容器的电流源，电容器和复位电路。 可以将MEMS单元的电压与PWM信号的脉冲宽度成比例地控制。 在所公开的另一实施例中，MEMS驱动电路接收第一PWM信号和第二PWM信号。 每个PWM信号耦合到电流源。 一个电流源可以提供课程电流控制，另一个电流源可以提供精细的电流控制。 驱动器电路还可以包括用于放电电容器的电容器和复位电路。 可以按照与第一和第二电流源的总和成比例地控制MEMS单元处的电压。 根据实施例的另一方面，公开了一种控制MEMS单元电压的方法。 该方法包括以下步骤：接收PWM信号，用PWM信号控制电流源，并根据PWM信号的脉冲宽度调整MEMS单元处的电压。

公开(公告)号：US06967718B1

公开(公告)日：2005-11-22

申请号：US10377977

申请日：2003-02-28

Applicant: Clinton B. Carlisle ,  Jahja I. Trisnadi ,  Douglas A. Webb ,  David Lehoty ,  Kais Almarzouk ,  Akira Tomita

Inventor： Clinton B. Carlisle ,  Jahja I. Trisnadi ,  Douglas A. Webb ,  David Lehoty ,  Kais Almarzouk ,  Akira Tomita

IPC: G01J3/18 ,  G01J3/28 ,  G02B6/34 ,  G02B26/08

CPC classification number: G02B26/0808 ,  G01J3/021 ,  G01J3/0229 ,  G01J3/18 ,  G01J3/2803 ,  G01J2003/1828 ,  G02B6/29314 ,  G02B6/4215

Abstract: An apparatus for measuring wavelength composition and power of a dispersed spectrum of light comprises a diffractive light modulator and a detector. The diffractive light modulator comprises an array of light modulating pixels operable in a first mode and a second mode. In operation, the dispersed spectrum of light illuminates the diffractive light modulator along the array of light modulating pixels, which selectively directs a subset of the dispersed spectrum of light into the first mode while directing a remainder of the dispersed spectrum of light into the second mode. The detector is optically coupled to the diffractive light modulator. In operation, the detector detects the subset of the dispersed spectrum of light while not detecting the remainder of the dispersed spectrum of light. Each of the light modulating pixels is controlled by signals sent from a controller. The signals comprise a time division multiplex modulation, a code division multiplex modulation, or a combination thereof.

Abstract translation: 用于测量光分散光谱的波长成分和功率的装置包括衍射光调制器和检测器。 衍射光调制器包括可在第一模式和第二模式下操作的光调制像素的阵列。 在操作中，光的分散光线沿着光调制像素阵列照射衍射光调制器，该阵列选择性地将散射光谱的子集导入第一模式，同时将剩余的分散光谱引导到第二模式 。 检测器光耦合到衍射光调制器。 在操作中，检测器检测光的分散光谱的子集，而不检测光的分散光谱的其余部分。 每个光调制像素由从控制器发送的信号控制。 信号包括时分复用调制，码分多路调制或其组合。

公开(公告)号：US5906866A

公开(公告)日：1999-05-25

申请号：US797397

申请日：1997-02-10

Applicant: Douglas A. Webb

Inventor： Douglas A. Webb

IPC: H01L21/285 ,  C23C8/02 ,  C23C16/02 ,  C23C16/14 ,  C23C16/34 ,  C23C16/56 ,  C23C28/00 ,  H01L21/28 ,  H01L21/768 ,  C23C14/02

CPC classification number: C23C8/02 ,  C23C16/0245 ,  C23C16/14 ,  C23C16/34 ,  C23C16/56 ,  H01L21/76841 ,  H01L21/76862 ,  H01L21/76876

Abstract: A process for chemical vapor deposition of blanket tungsten thin films on titanium nitride proceeds by hydrogen reduction of tungsten hexafluoride at temperatures of 200 to 500.degree. C. Tungsten film nucleation is preferably facilitated by partial removal of the oxidized surface of titanium nitride or titanium nitride coated substrates by a sputter cleaning process prior to the tungsten CVD. The process differs in part from other processes in that deposition proceeds rapidly on titanium nitride without a significant nucleation period without the addition of other chemical compounds such as silane. The sputter cleaning process preferably takes place in an inert vacuum environment that protects the substrate from atmosphere and oxygen until the tungsten CVD step occurs. The process is particularly advantageous where the substrate has a titanium nitride surface that had been created in a separate location such as by a reactive sputter coating process from which the substrate must be transferred through ambient atmosphere containing oxygen. The advantages of the invention can be partially attained or enhanced by isolating the substrates from an oxygen containing environment between the creation of the titanium nitride surface and the initiating of the tungsten CVD.

Abstract translation: 通过在200至500℃的温度下通过氢还原六氟化钨来进行在氮化钛上的气相沉积钨薄膜的化学气相沉积的工艺。优选通过部分去除氮化钛或氮化钛涂覆的氧化表面来促进钨膜成核 在钨CVD之前通过溅射清洗工艺制造衬底。 该方法部分地与其它方法不同，因为沉积在氮化钛上快速进行而没有显着的成核期，而不添加其它化学化合物如硅烷。 溅射清洗工艺优选在惰性真空环境中进行，其保护衬底免受大气和氧气直到发生钨CVD步骤。 该方法特别有利的是，其中衬底具有已经在单独位置产生的氮化钛表面，例如通过反应性溅射涂覆工艺，衬底必须从该反应溅射涂覆工艺通过包含氧的环境气氛转移。 通过在氮化钛表面的产生和钨CVD的引发之间将衬底与含氧环境隔离来部分地获得或增强本发明的优点。

公开(公告)号：US5512374A

公开(公告)日：1996-04-30

申请号：US239497

申请日：1994-05-09

Applicant: Robert M. Wallace ,  Steven A. Henck ,  Douglas A. Webb

Inventor： Robert M. Wallace ,  Steven A. Henck ,  Douglas A. Webb

IPC: G02B26/08 ,  B81B3/00 ,  B81C1/00 ,  C08G65/00 ,  C09D171/00 ,  C09D171/02 ,  B32B27/00

CPC classification number: B81C1/0096 ,  B81B3/0005 ,  C08G65/007 ,  C09D171/02 ,  B81C2201/112 ,  Y10T428/31544 ,  Y10T428/31699

Abstract: A micro-mechanical device (10) includes relatively movable elements (11, 17) which contact or engage and which thereafter stick or adhere. A perfluoropolyether (PFPE) film (31) is applied to the contacting or engaging portions of the elements (11,17) to ameliorate or eliminate such sticking or adhesion.

Abstract translation: 微机械装置（10）包括相对可移动的元件（11,17），其接触或接合，然后粘结或粘附。 将全氟聚醚（PFPE）膜（31）施加到元件（11,17）的接触或接合部分以改善或消除这种粘附或粘附。

公开(公告)号：US07218336B2

公开(公告)日：2007-05-15

申请号：US10943364

申请日：2004-09-17

Applicant: David T. Amm ,  Douglas A. Webb ,  Gregory A. Myatt

Inventor： David T. Amm ,  Douglas A. Webb ,  Gregory A. Myatt

IPC: B41J2/47

CPC classification number: H04N1/40031

Abstract: A method of providing drive signals to an illuminator module having a plurality of channels in a printing application. Binary image data including image bits is provided from a data source to the illuminator module. Each image bit is converted to a multi-bit amplitude value within the illuminator module, wherein the conversion of each image bit to the multi-bit amplitude value depends at least on a value of the image bit and which channel is associated with the image bit. Pulse width modulation (PWM) may be applied to the drive signals using programmable transition delays. Apparatus for performing the aforementioned method are also disclosed.

Abstract translation: 在打印应用中向具有多个通道的照明器模块提供驱动信号的方法。 从数据源向照明器模块提供包括图像位的二进制图像数据。 每个图像位在照明器模块内被转换成多位振幅值，其中每个图像比特到多比特振幅值的转换至少取决于图像比特的值，哪个信道与图像比特相关联 。 可以使用可编程转换延迟将脉宽调制（PWM）应用于驱动信号。 还公开了用于执行上述方法的装置。

公开(公告)号：US06781739B1

公开(公告)日：2004-08-24

申请号：US10366869

申请日：2003-02-14

Applicant: David T. Amm ,  Douglas A. Webb

Inventor： David T. Amm ,  Douglas A. Webb

IPC: G02F101

CPC classification number: G02B5/1828 ,  G09G3/34

Abstract: One embodiment disclosed relates to a method for driving a micro electromechanical (MEM) device. The method includes generating a high-frequency AC drive signal that is substantially greater in frequency than a resonance frequency of a movable feature in the MEM device, and modulating the amplitude of the high-frequency AC drive signal. A DC-like displacement of the movable feature in the MEM device is achieved by driving the movable feature using the amplitude modulated high-frequency AC drive signal.

Abstract translation: 公开的一个实施例涉及一种用于驱动微机电（MEM）装置的方法。 该方法包括产生频率高于MEM装置中的可移动特征的共振频率并且调制高频AC驱动信号的振幅的高频AC驱动信号。 通过使用幅度调制的高频AC驱动信号驱动可移动特征来实现MEM装置中的可移动特征的类DC位移。

公开(公告)号：US6093645A

公开(公告)日：2000-07-25

申请号：US965658

申请日：1997-11-06

Applicant: Michael S. Ameen ,  Joseph T. Hillman ,  Douglas A. Webb

Inventor： Michael S. Ameen ,  Joseph T. Hillman ,  Douglas A. Webb

IPC: H01L21/285 ,  C23C8/02 ,  C23C16/02 ,  C23C16/14 ,  C23C16/34 ,  C23C16/56 ,  C23C28/00 ,  H01L21/28 ,  H01L21/768

CPC classification number: H01L21/76856 ,  C23C16/0245 ,  C23C16/14 ,  C23C16/34 ,  C23C16/56 ,  C23C28/322 ,  C23C28/34 ,  C23C28/3455 ,  C23C8/02 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76862 ,  H01L21/76876 ,  H01L21/28518

Abstract: An effective barrier layer to chemical attack of fluorine during chemical vapor deposition of tungsten from a tungsten fluoride source gas is fabricated by the present invention. A titanium nitride conformal barrier film can be formed by in-situ nitridation of a thin titanium film. The substrate is placed in a module wherein the pressure is reduced and the temperature raised to 350.degree. C. to about 700.degree. C. A titanium film is then deposited by plasma-enhanced chemical vapor deposition of titanium tetrahalide and hydrogen. This is followed by formation of titanium nitride on the titanium film by subjecting the titanium film to an nitrogen containing plasma such as an ammonia, an N.sub.2 or an NH.sub.3 /N.sub.2 based plasma. Tungsten is then deposited on the film of titanium nitride by plasma-enhanced chemical vapor deposition. All the titanium deposition and nitridation steps may be conducted in the same processing module without removing the substrate from the module until the reaction steps are completed. The tungsten deposition step may be preformed in a separate processing module or in the module used to deposit and process the titanium.

Abstract translation: 通过本发明制造在氟化钨源气体的钨的化学气相沉积期间氟的化学侵蚀的有效阻挡层。 可以通过钛钛薄膜的原位氮化形成氮化钛保形膜。 将衬底放置在其中压力降低并且温度升高到350℃至约700℃的模块中。然后通过等离子体增强化学气相沉积四卤化钛和氢气沉积钛膜。 然后，通过使钛膜经受含氮等离子体，例如氨，N 2或NH 3 / N 2等离子体，在钛膜上形成氮化钛。 然后通过等离子体增强化学气相沉积将钨沉积在氮化钛的膜上。 所有的钛沉积和氮化步骤可以在相同的处理模块中进行，而不需要从模块中去除衬底，直到反应步骤完成。 钨沉积步骤可以在单独的处理模块中或在用于沉积和处理钛的模块中预成型。