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73 条记录 (耗时 0.039 秒)

    Self current limiting antifuse circuit
    7.
    发明授权
    Self current limiting antifuse circuit 失效
    自限流反熔丝电路

    公开(公告)号：US5706238A

    公开(公告)日：1998-01-06

    申请号：US783623

    申请日：1997-01-14

    申请人： Douglas J. Cutter ,  Kurt D. Beigel ,  Adrian E. Ong ,  Fan Ho ,  Patrick J. Mullarkey ,  Dien S. Luong ,  Brett Debenham ,  Kim M. Pierce

    发明人： Douglas J. Cutter ,  Kurt D. Beigel ,  Adrian E. Ong ,  Fan Ho ,  Patrick J. Mullarkey ,  Dien S. Luong ,  Brett Debenham ,  Kim M. Pierce

    IPC分类号： G11C17/18 ,  G11C17/16

    CPC分类号： G11C17/18

    摘要： An antifuse bank includes a bank of self-decoupling anti fuse circuits. The anti fuse circuits are programmed according to a pattern of address bits by blowing antifuses corresponding to bits of the address. The antifuses are blown by applying a high voltage across the antifuse. As each antifuse is blown, its resistance drops and current through the antifuse increases. The self-decoupling circuit detects the increased current flow and, when the anti fuse resistance is sufficiently low, limits current flow through the anti fuse. The antifuse thus does not load the high voltage source as other antifuses are blown.

    摘要翻译： 反熔丝库包括一组自去耦反熔丝电路。 反熔丝电路根据地址位的模式通过吹出与地址的位相对应的反熔丝来编程。 通过在反熔丝上施加高电压来吹制反熔丝。 当每个反熔丝熔断时，其电阻下降，并且通过反熔丝的电流增加。 自解耦电路检测到增加的电流，当反熔丝电阻足够低时，限制电流通过反熔丝。 因此，反熔丝因其他反熔丝被吹制而不加载高压源。

    Self current limiting antifuse circuit
    8.
    发明授权
    Self current limiting antifuse circuit 失效
    自限流反熔丝电路

    公开(公告)号：US5631862A

    公开(公告)日：1997-05-20

    申请号：US611419

    申请日：1996-03-05

    申请人： Douglas J. Cutter ,  Kurt D. Beigel ,  Adrian E. Ong ,  Fan Ho ,  Patrick J. Mullarkey ,  Dien S. Luong ,  Brett Debenham ,  Kim M. Pierce

    发明人： Douglas J. Cutter ,  Kurt D. Beigel ,  Adrian E. Ong ,  Fan Ho ,  Patrick J. Mullarkey ,  Dien S. Luong ,  Brett Debenham ,  Kim M. Pierce

    IPC分类号： G11C17/18 ,  G11C17/16

    CPC分类号： G11C17/18

    摘要： An antifuse bank includes a bank of self-decoupling antifuse circuits. The antifuse circuits are programmed according to a pattern of address bits by blowing antifuses corresponding to bits of the address. The antifuses are blown by applying a high voltage across the antifuse. As each antifuse is blown, its resistance drops and current through the antifuse increases. The self-decoupling circuit detects the increased current flow and, when the antifuse resistance is sufficiently low, limits current flow through the antifuse. The antifuse thus does not load the high voltage source as other antifuses are blown.

    摘要翻译： 反熔丝库包括一组自解耦反熔丝电路。 反熔丝电路根据地址位的模式通过吹出与地址的位相对应的反熔丝来编程。 通过在反熔丝上施加高电压来吹制反熔丝。 当每个反熔丝熔断时，其电阻下降，并且通过反熔丝的电流增加。 自解耦电路检测到增加的电流，并且当反熔丝电阻足够低时，限制了通过反熔丝的电流流动。 因此，反熔丝因其他反熔丝被吹制而不加载高压源。

    Low-current polysilicon fuse
    9.
    发明授权
    Low-current polysilicon fuse 失效
    低电流多晶硅保险丝

    公开(公告)号：US5264725A

    公开(公告)日：1993-11-23

    申请号：US986271

    申请日：1992-12-07

    申请人： Patrick J. Mullarkey ,  Kurt D. Beigel

    发明人： Patrick J. Mullarkey ,  Kurt D. Beigel

    IPC分类号： H01L23/525 ,  H01L29/40 ,  H01L23/48 ,  H01L27/02 ,  H01L29/54

    CPC分类号： H01L23/5256 ,  H01L2924/0002

    摘要： A submicron-width fuse element is disclosed that protects peripheral DRAM chip devices from low current failures below the range of metal fuse elements. In a specific application, the fuse elements are used to protect a DRAM chip from dielectric failure of voltage supply filtering capacitors. A low cross-section and length allows minimum space for the element.

    摘要翻译： 公开了一种亚微米宽度的熔丝元件，其保护外围DRAM芯片器件免于低于金属熔丝元件范围的低电流故障。 在具体应用中，熔丝元件用于保护DRAM芯片免受电压滤波电容器的介质故障。 低截面和长度允许元素的最小空间。

    Circuit for programming antifuse bits
    10.
    发明授权
    Circuit for programming antifuse bits 失效
    用于编程反熔丝位的电路

    公开(公告)号：US06826071B2

    公开(公告)日：2004-11-30

    申请号：US10098262

    申请日：2002-03-15

    申请人： Patrick J. Mullarkey ,  Casey R. Kurth ,  Jason Graalum ,  Daryl L. Habersetzer

    发明人： Patrick J. Mullarkey ,  Casey R. Kurth ,  Jason Graalum ,  Daryl L. Habersetzer

    IPC分类号： G11C1700

    CPC分类号： G11C17/18

    摘要： A method of verifying whether unprogrammed antifuses are leaky in a semiconductor memory. The method involves the steps of: connecting the antifuse in series with a node; providing current to the node, the current being sufficient to charge the node from a first to a second voltage; detecting whether the voltage at the node charges to the second voltage, or remains at the first voltage to indicate that the antifuse is leaky; outputting signals indicating the result of the detection; and detecting the voltage at the node remains at the first voltage indicates that the antifuse is leaky. In another embodiment, a method of verifying whether antifuses have been programmed properly in a semiconductor memory. The method includes the steps of: connecting the antifuse in series with a node; providing current to the node through a parallel combination of a first transistor and a second transistor that is sufficient to charge the node from a first voltage to a second voltage; and detecting whether the voltage at the node charges to the second voltage or remains at the first voltage to indicate that the antifuse is programmed properly; outputting first and second signals indicating the result of the detection; and detecting the voltage at the node remains at the first voltage indicates that the antifuse is programmed properly.

    摘要翻译： 验证半导体存储器中未编程的反熔丝是否泄漏的方法。 该方法包括以下步骤：将反熔丝与节点串联连接; 向节点提供电流，电流足以使节点从第一电压到第二电压充电; 检测节点处的电压是否充电到第二电压，或者保持在第一电压以指示反熔丝泄漏; 输出指示检测结果的信号; 并且检测节点处的电压保持在第一电压，表示反熔丝泄漏。 在另一个实施例中，验证在半导体存储器中是否正确地编程了反熔丝的方法。 该方法包括以下步骤：将反熔丝与节点串联连接; 通过第一晶体管和第二晶体管的并联组合向节点提供电流，其足以将节点从第一电压充电到第二电压; 并且检测节点处的电压是否充电到第二电压或者保持在第一电压以指示反熔丝被正确编程; 输出表示检测结果的第一和第二信号; 并且检测节点处的电压保持在第一电压，表示反熔丝被正确编程。