摘要:
An embodiment relates to an integrated circuit comprising measurement means for detection of a current change, wherein said measurement means comprise at least one coil.
摘要:
A method is used for testing a tunneling oxide layer of a flash memory. The method includes providing a test device. The test device includes a diffusion region, a floating gate electrode above the diffusion region, and a tunneling oxide layer disposed between the diffusion region and the floating gate electrode. Multiple contacts are disposed over the periphery of the floating gate but not over the diffusion region. Multiple contacts are disposed over the diffusion region. A first voltage is applied to the floating-gate contacts and A second voltage is applied on to the diffusion-region contacts.
摘要:
An integrated circuit memory device has a plurality of nonvolatile programmable elements which are used to store a pass/fail status bit at selected milestones in a test sequence. At selected points in the test process an element may be programmed to indicate that the device has passed the tests associated with the selected point in the process. Prior to performing further tests on the device, the element is read to verify that it passed previous tests in the test process. If the appropriate elements are not programmed, the device is rejected. A rejected device may be retested according to the previous test steps. Laser fuses, electrically programmable fuses or antifuses are used to store test results. The use of electrically writeable nonvolatile memory elements allows for programming of the elements after the device has been packaged.
摘要:
A field programmable gate array has a security antifuse which when programmed prevents readout of data indicative of how the interconnect structure is programmed but which does not prevent readout of data indicative of which other antifuses are programmed. In some embodiments, the programming control shift registers adjacent the left and right sides are the field programmable gate array are disabled when the security antifuse is programmed but the programming control shift registers adjacent the top and bottom sides of the field programmable gate array are not disabled. A second security antifuse is also provided which when programmed disables a JTAG boundary scan register but does not disable a JTAG bypass register. Information can therefore be shifted through the JTAG test circuitry without allowing the JTAG circuitry to be used to extract information indicative of how the interconnect structure is programmed. Logic module and interface cell scan paths are provided and special test instructions are supported which allow test vectors to be loaded into the logic module and interface cell scan paths.
摘要:
The present disclosure provides a method and system for creating dipole moment model. The method is applied to a tested circuit and includes: performing a near-field measurement on the tested circuit, to obtain a near-field electric field and a near-field magnetic field related to the tested circuit; performing a two-dimensional divergence calculation on the near-field electric field and the near-field magnetic field, to obtain a near-field electric divergence field and a near-field magnetic divergence field; performing a convolution calculation on the near-field electric divergence field and the near-field magnetic divergence field with a digital filter; and building a dipole moment matrix equivalent to the tested circuit according to a result of the convolution calculation.
摘要:
A method, apparatus, and product comprising: obtaining a representation of a quantum circuit; determining that a qubit is a candidate auxiliary qubit by estimating that a state of the qubit at a first cycle is identical to a state of the qubit at a second cycle; identifying a function section in the quantum circuit based on the qubit, the function section commencing at a beginning cycle, the beginning cycle is ordered before the second cycle, the function section ending at an ending cycle, the ending cycle is ordered after the first cycle, the ending cycle is ordered after the commencing cycle, the function section utilizing the qubit as an auxiliary qubit; and outputting an indication of the function section.
摘要:
A test device for testing an electronic device has a base, a first mounting plane, a first support element, a plurality of second support elements, a plurality of test elements, and a control unit. The first mounting plane is mounted on the base. The first support element is slidable on the first mounting plane, the second support elements are slidable on the first support element, and the test elements are slidable on the second support elements. The control unit electrically coupled to the test elements controls the test elements to provide impact force on the electronic device.
摘要:
A testing mechanism for testing magnetically operated microelectromechanical system (MEMS) switches at a wafer level stage of manufacture includes an electromagnetic fixture configured to be received in a standard probe ring. The electromagnetic fixture is rotatable, relative to the probe ring, to permit adjustment of orientation of a generated magnetic field relative to the MEMS devices of a subject wafer. The testing mechanism also includes a probe card with probes positioned to contact test pads on the subject wafer. During operation, the probe card is positioned over the wafer to be tested, with the test probes in electrical contact with respective contact pads of the wafer, and the electromagnetic fixture is positioned above the probe card. An electrical potential is applied across the switches on the subject wafer, and the electromagnetic fixture is energized at selected levels of power and duration. Current flow across each switch is measured to determine one or more of: open circuit contact resistance, closed circuit contact resistance, response time, response to switching magnetic field, frequency response, current capacity, critical dimensions, critical angles of magnetic field orientation, etc. Wafer level testing enables rejection of non-compliant switches before the cutting and packaging levels of manufacture.
摘要:
A method and system for testing a MEMS sensor element during operation of a MEMS sensor system in one embodiment includes a test signal generator configured to generate a broad frequency band test signal, and a verification signal substantially identical to the test signal, a microelectrical-mechanical system (MEMS) sensor element operatively connected to the test signal generator for generating a sensor output in response to the test signal, a comparison component configured to generate an evaluation signal output based upon the verification signal and the test signal, and an evaluation circuit operatively connected to the comparison component and configured to identify a mismatch between the verification signal and the sensor output based upon the evaluation signal.
摘要:
An integrated circuit memory device has a plurality of nonvolatile programmable elements which are used to store a pass/fail status bit at selected milestones in a test sequence. At selected points in the test process an element may be programmed to indicate that the device has passed the tests associated with the selected point in the process. Prior to performing further tests on the device, the element is read to verify that it passed previous tests in the test process. If the appropriate elements are not programmed, the device is rejected. A rejected device may be retested according to the previous test steps. Laser fuses, electrically programmable fuses or antifuses are used to store test results. The use of electrically writeable nonvolatile memory elements allows for programming of the elements after the device has been packaged.