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公开(公告)号：US20030176068A1
公开(公告)日：2003-09-18
申请号：US10401405
申请日：2003-03-27
申请人： EKC Technology, Inc.
IPC分类号： H01L021/8238 , H01L021/302 , H01L021/461
CPC分类号： C09G1/02 , C09K13/00 , C09K13/06 , C23F3/00 , H01L21/02074 , H01L21/3212 , Y10S438/959
摘要： A composition for chemical mechanical polishing includes a slurry. A sufficient amount of a selectively oxidizing and reducing compound is provided in the composition to produce a differential removal of a metal and a dielectric material. A pH adjusting compound adjusts the pH of the composition to provide a pH that makes the selectively oxidizing and reducing compound provide the differential removal of the metal and the dielectric material. A composition for chemical mechanical polishing is improved by including an effective amount for chemical mechanical polishing of a hydroxylamine compound, ammonium persulfate, a compound which is an indirect source of hydrogen peroxide, a peracetic acid or periodic acid. A method for chemical mechanical polishing comprises applying a slurry to a metal and dielectric material surface to produce mechanical removal of the metal and the dielectric material. A selectively oxidizing and reducing compound is applied to produce a differential removal of the metal and the dielectric material. The pH of the slurry and the selectively oxidizing and reducing compound is adjusted to provide the differential removal of the metal and the dielectric material. A method for chemical mechanical polishing comprises applying a slurry to a metal and dielectric material surface to produce mechanical removal of the metal and the dielectric material, and an effective amount for chemical mechanical polishing of a hydroxylamine compound, ammonium persulfate, a compound which is an indirect source of hydrogen peroxide, a peracetic acid or periodic acid.
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公开(公告)号：US20020134963A1
公开(公告)日：2002-09-26
申请号：US10007134
申请日：2001-12-04
申请人： EKC Technology, Inc.
IPC分类号： H01B013/00
CPC分类号： C23C18/06 , C11D7/3218 , C11D7/3281 , C11D7/34 , C23C18/08 , C23C18/1216 , C23C18/1245 , C23C18/1295 , C23C18/14 , G03F7/425 , G03F7/426 , H01L21/02052 , H01L21/02071 , H01L21/31116 , H01L21/76807 , H01L21/76814 , H01L21/76838 , H01L21/76894 , H05K3/105 , Y10S148/903 , Y10T428/12493 , Y10T428/12903
摘要： A new cleaning chemistry based on a choline compound, such as choline hydroxide, is provided in order to address the problem of dual damascene fabrication. An etch stop inorganic layer at the bottom of a dual damascene structure protects the underlying interconnect of copper and allows a better cleaning. A two step etch process utilizing the etch stop layer is used to achieve the requirements of ULSI manufacturing in a dual damascene structure.
摘要翻译： 提供了基于胆碱化合物（例如氢氧化胆碱）的新的清洁化学品，以解决双镶嵌制造的问题。 双镶嵌结构底部的刻蚀终止无机层保护铜的底层互连，并允许更好的清洁。 使用利用蚀刻停止层的两步蚀刻工艺用于实现双镶嵌结构中ULSI制造的要求。
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公开(公告)号：US20040180292A1
公开(公告)日：2004-09-16
申请号：US10694999
申请日：2003-10-29
申请人： EKC Technology, Inc.
发明人： Wai M. Lee , David J. Maloney , Paul J. Roman , Michael A. Fury , Ross H. Hill , Clifford Henderson , Sean Barstow
IPC分类号： G03F007/00
CPC分类号： H01L21/0337 , H01L21/0332 , H01L21/3081 , H01L21/3086 , H01L21/31144 , H01L21/316 , H01L21/31691
摘要： The present invention relates generally to a method and apparatus for converting a precursor material, preferably organometallic, to a film, preferably metal-containing, that is adherent to at least a portion of a substrate. Both method and apparatus include a pre-conversion step or section, and a step or section for substantial conversion of a portion of material from the pre-conversion step or section into the form of a predetermined pattern, wherein this substantial conversion results in a metal-containing patterned layer on the substrate.
摘要翻译： 本发明一般涉及用于将前体材料（优选有机金属的）转化成粘附至基底的至少一部分的优选含金属的膜的方法和装置。 方法和装置都包括预转换步骤或部分，以及将部分材料从预转换步骤或部分实质转化为预定图案形式的步骤或部分，其中该实质转化产生金属 在基板上形成图案层。
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公开(公告)号：US20040072439A1
公开(公告)日：2004-04-15
申请号：US10683730
申请日：2003-10-10
申请人： EKC Technology, Inc.
IPC分类号： H01L021/311
CPC分类号： C09G1/02 , C09K13/00 , C09K13/06 , C23F3/00 , H01L21/02074 , H01L21/3212 , Y10S438/959
摘要： A composition for chemical mechanical polishing includes a slurry. A sufficient amount of a selectively oxidizing and reducing compound is provided in the composition to produce a differential removal of a metal and a dielectric material. A pH adjusting compound adjusts the pH of the composition to provide a pH that makes the selectively oxidizing and reducing compound provide the differential removal of the metal and the dielectric material. A composition for chemical mechanical polishing is improved by including an effective amount for chemical mechanical polishing of a hydroxylamine compound, ammonium persulfate, a compound which is an indirect source of hydrogen peroxide, a peracetic acid or periodic acid. A method for chemical mechanical polishing comprises applying a slurry to a metal and dielectric material surface to produce mechanical removal of the metal and the dielectric material. A selectively oxidizing and reducing compound is applied to produce a differential removal of the metal and the dielectric material. The pH of the slurry and the selectively oxidizing and reducing compound is adjusted to provide the differential removal of the metal and the dielectric material. A method for chemical mechanical polishing comprises applying a slurry to a metal and dielectric material surface to produce mechanical removal of the metal and the dielectric material, and an effective amount for chemical mechanical polishing of a hydroxylamine compound, ammonium persulfate, a compound which is an indirect source of hydrogen peroxide, a peracetic acid or periodic acid.
摘要翻译： 用于化学机械抛光的组合物包括浆料。 在组合物中提供足够量的选择性氧化和还原化合物以产生金属和介电材料的差别去除。 pH调节化合物调节组合物的pH以提供使得选择性氧化和还原化合物提供金属和介电材料的差异去除的pH。 用于化学机械抛光的组合物通过包括有效量的羟胺化合物，过硫酸铵，作为过氧化氢的间接来源的化合物，过乙酸或高碘酸的化学机械抛光来改善。 用于化学机械抛光的方法包括将浆料施加到金属和介电材料表面以产生金属和电介质材料的机械去除。 施加选择性氧化还原化合物以产生金属和电介质材料的微分去除。 调节浆料和选择性氧化和还原化合物的pH以提供金属和电介质材料的差别去除。 一种用于化学机械抛光的方法包括将浆料施加到金属和介电材料表面以产生金属和介电材料的机械去除，以及用于化学机械抛光羟胺化合物，过硫酸铵，化合物为 过氧化氢的间接来源，过乙酸或高碘酸。
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