-
1.发明授权Method for removing electro-static discharge (EDS) noise signal in electronic system including the metal-insulator transition (MIT) 3-terminal device 有权包括金属 - 绝缘体转变（MIT）三端装置在内的电子系统中的静电放电（EDS）噪声信号的消除方法公开(公告)号：US09595673B2
公开(公告)日：2017-03-14
申请号：US14355384
申请日：2012-10-26
Inventor： Hyun-Tak Kim , Bongjun Kim , Jeong Yong Choi , Jong Chan Park
CPC classification number: H01L49/003
Abstract: The inventive concept shows the embodiment of t-switch which is a MIT 3-terminal device based on a Hole-driven MIT theory and a technology for removing an ESD noise signal which is one of applications of the t-switch. The t-switch includes three terminals of Inlet, Outlet and Control, and a metal-insulator transition (MIT) occurs at an Outlet layer by a current flowing through the Control terminal. In the t-switch, a high resistor is connected to the Control terminal and thereby an ESD noise signal of high voltage flows through the Inlet-Outlet without damaging the device.
Abstract translation: 本发明的概念示出了作为基于空穴驱动MIT理论的MIT 3端子装置和用于去除作为t开关的应用之一的ESD噪声信号的技术的t开关的实施例。 t开关包括三个入口，出口和控制端子，并且通过流过控制端子的电流在出口层处发生金属 - 绝缘体转变（MIT）。 在t开关中，高电阻连接到控制端子，从而高电压的ESD噪声信号流过入口插座而不会损坏器件。
-
公开(公告)号：US09178126B2
公开(公告)日：2015-11-03
申请号：US13905950
申请日：2013-05-30
Inventor： Hyun-Tak Kim , Jeong Yong Choi , Hyun-Woo Jeon , Jae ho Choi , Gi-wan Seo
Abstract: Provided is a thermoelectric device including a first electrode, a substrate electrically connected to the first electrode, a thin film on the substrate, and a second electrode on the thin film. The substrate and the thin film may be configured to exhibit a metallic property at a temperature over a critical temperature, thereby having a thermoelectric power of the device that is higher than that of a semiconductor junction.
Abstract translation: 提供了一种热电装置，其包括第一电极，与第一电极电连接的基板，基板上的薄膜和薄膜上的第二电极。 衬底和薄膜可以被配置为在超过临界温度的温度下表现出金属性质，由此具有比半导体结的高的热电功率。
-
3.发明授权Variable gate field-effect transistor and electrical and electronic apparatus including the same 有权可变栅场效应晶体管和包括其的电气和电子设备公开(公告)号：US08587224B1
公开(公告)日：2013-11-19
申请号：US13929831
申请日：2013-06-28
Inventor： Hyun-Tak Kim , Bongjun Kim
IPC: H05B37/02 , H01L21/8222
CPC classification number: H01L27/0629 , H01L25/16 , H01L27/0248 , H01L49/003 , H01L2924/0002 , H03K17/145 , H01L2924/00
Abstract: Provided are a variable field effect transistor (FET) designed to suppress a reduction of current between a source and a drain due to heat while decreasing a temperature of the FET, and an electrical and electronic apparatus including the variable gate FET. The variable gate FET includes a FET and a gate control device that is attached to a surface or a heat-generating portion of the FET and is connected to a gate terminal of the FET so as to vary a voltage of the gate terminal. A channel current between the source and drain is controlled by the gate control device that varies the voltage of the gate terminal when the temperature of the FET increases above a predetermined temperature.
Abstract translation: 提供了一种可变场效应晶体管（FET），其设计成在降低FET的温度的同时抑制源极和漏极之间的电流的降低，以及包括可变栅极FET的电气和电子设备。 可变栅极FET包括FET和栅极控制装置，其连接到FET的表面或发热部分，并连接到FET的栅极端子，以便改变栅极端子的电压。 源极和漏极之间的沟道电流由栅极控制器控制，栅极控制器件当FET的温度升高到高于预定温度时改变栅极端子的电压。
-
4.发明授权公开(公告)号：US11092623B2
公开(公告)日：2021-08-17
申请号：US16709216
申请日：2019-12-10
Inventor： Hyun-Tak Kim , Bit Na Kim , Sungwoo Jo
Abstract: The present invention relates to a current sensor which measures alternating electromagnetic wave and a current breaker using the same, and the current sensor for alternating current is characterized in that it includes a sensor part arranged at a separation distance from the power wire through which alternating current is flowing; and a means of detecting alternating current by measuring the electromagnetic wave generated across the above sensor part by the electromotive force induced by the alternating current flowing through the above power wire, and in that the above means of detecting alternating current includes an amplifier.
-
公开(公告)号：US09281812B2
公开(公告)日：2016-03-08
申请号：US14322223
申请日：2014-07-02
Inventor： Hyun-Tak Kim
IPC: H03K17/687 , H03K17/30 , H03K17/567 , H03K17/60
CPC classification number: H03K17/30 , H03K17/567 , H03K17/60 , H03K17/601 , H03K2217/0009
Abstract: Provided is a metal-insulator transition (MIT) transistor system including an MIT critical current supply device allowing MIT to occur between a control terminal and an outlet terminal of an MIT transistor for easily and conveniently driving the MIT transistor. A current supplier according to the present invention provides a critical current for allowing an MIT phenomenon to occur between the control terminal and the output terminal of the MIT transistor.
Abstract translation: 提供了一种包括MIT临界电流供应装置的金属 - 绝缘体转变（MIT）晶体管系统，其允许在控制端子和MIT晶体管的出口端子之间发生MIT，以便于和方便地驱动MIT晶体管。 根据本发明的当前供应商提供了用于允许在MIT晶体管的控制端子和输出端子之间发生MIT现象的临界电流。
-
Patent Agency Ranking
公开(公告)号：US10553381B2
公开(公告)日：2020-02-04
申请号：US15001804
申请日：2016-01-20
Inventor： Hyun-Tak Kim , Sungwoo Jo , Sun-Kyu Jung , Jin-cheol Cho
Abstract: The present disclosure discloses an electrical switchgear configured to control an electro-magnet by using the electro-magnet, a critical temperature device, and an electro-magnet control unit without using a bimetal and a mechanical contact. The electro-magnet switches power applied through a power line in response to a flow of control current to a power device connected to a load side. In a critical temperature device, an output current value varies when a temperature of a heating wire, which is connected to the power line, exceeds a critical temperature by supply current flowing to the power device. An electro-magnet control unit, which is realizable with an SCR, allows a flow of control current of the electro-magnet to be generated or cut off in response to the output current value of the critical temperature device.
-
7.发明申请METHOD FOR REMOVING ELECTRO-STATIC DISCHARGE (EDS) NOISE SIGNAL IN ELECTRONIC SYSTEM INCLUDING THE METAL-INSULATOR TRANSITION (MIT) 3-TERMINAL DEVICE 有权用于去除包括金属绝缘体过渡（MIT）3端子装置在内的电子系统中的静电放电（EDS）噪声信号的方法公开(公告)号：US20140285933A1
公开(公告)日：2014-09-25
申请号：US14355384
申请日：2012-10-26
Inventor： Hyun-Tak Kim , Bongjun Kim , Jeong Yong Choi , Jong Chan Park
CPC classification number: H01L49/003
Abstract: The inventive concept shows the embodiment of t-switch which is a MIT 3-terminal device based on a Hole-driven MIT theory and a technology for removing an ESD noise signal which is one of applications of the t-switch. The t-switch includes three terminals of Inlet, Outlet and Control, and a metal-insulator transition (MIT) occurs at an Outlet layer by a current flowing through the Control terminal. In the t-switch, a high resistor is connected to the Control terminal and thereby an ESD noise signal of high voltage flows through the Inlet-Outlet without damaging the device.
Abstract translation: 本发明的概念示出了作为基于空穴驱动MIT理论的MIT 3端子装置和用于去除作为t开关的应用之一的ESD噪声信号的技术的t开关的实施例。 t开关包括三个入口，出口和控制端子，并且通过流过控制端子的电流在出口层处发生金属 - 绝缘体转变（MIT）。 在t开关中，高电阻连接到控制端子，从而高电压的ESD噪声信号流过入口插座而不会损坏器件。
-
8.发明申请COMPOSITE TEMPERATURE AND SMOKE ALARM DEVICE AND EQUIPPED SMOKE SENSOR THEREIN 有权复合温度和烟雾报警装置及其配备的烟雾传感器公开(公告)号：US20140111343A1
公开(公告)日：2014-04-24
申请号：US13824956
申请日：2012-06-07
Inventor： Hyun-Tak Kim , Bongjun Kim , Jong Chan Park
CPC classification number: G08B17/10 , G08B17/06 , G08B17/113
Abstract: Disclosed is a multipurpose alarm apparatus which includes a smoke sensing unit configured to sense a smoke using a first sensor and a second sensor, each of the first and second sensors including a temperature-sensitive smoke sensor portion disposed between a first electrode and a second electrode; a smoke level measuring unit configured to generate a smoke level measurement signal by comparing a difference between first and second smoke detection signals from the first and second sensors with a reference signal; and a sensing control unit configured to generate a fire alarm signal when the smoke level measurement signal corresponds to a fire generation condition.
Abstract translation: 公开了一种多用途报警装置，其包括烟感测单元，其被配置为使用第一传感器和第二传感器感测烟雾，第一和第二传感器中的每一个包括设置在第一电极和第二电极之间的温度敏感的烟雾传感器部分 ; 烟度测量单元，被配置为通过将来自第一和第二传感器的第一和第二烟雾检测信号之间的差与参考信号进行比较来产生烟度测量信号; 以及感测控制单元，被配置为当所述烟度测量信号对应于发火条件时产生火灾报警信号。
-
公开(公告)号：US11908931B2
公开(公告)日：2024-02-20
申请号：US17499736
申请日：2021-10-12
Inventor： Tae Moon Roh , Hyun-Tak Kim , Sun Ae Kim
CPC classification number: H01L29/7817 , H10N99/03
Abstract: Provided is a monolithic metal-insulator transition device. The monolithic metal-insulator transition device includes a substrate including a driving region and a switching region, first and second source/drain regions on the driving region, a gate electrode between the first and second source/drain regions, an inlet well region formed adjacent to an upper surface of the substrate on the switching region, a control well region having a different conductivity type from the inlet well region between the inlet well region and a lower surface of the substrate, a first wiring electrically connecting the first source/drain region and the control well region, and a second wiring electrically connecting the second source/drain region and the inlet well region.
-
公开(公告)号：US10243093B1
公开(公告)日：2019-03-26
申请号：US16122634
申请日：2018-09-05
Inventor： Hyun-Tak Kim , Jin Cheol Cho , Tetiana Slusar
IPC: H01L31/032 , H01L31/18 , H01L27/144 , H01L21/02
Abstract: Electromagnetic sensor of an oxygen-rich vanadium oxide and the system thereof are provided. The electromagnetic sensor of an oxygen-rich vanadium oxide according the embodiment of the present invention comprises; the first substance layer containing silicon doped with an n-type dopant; and the second substance layer arranged on the first substance layer, and containing a vanadium oxide represented by the molecular formula of VxOy. Dopant concentration of the first substance layer can be higher than 1.0×10′5 cm−3 and lower than 1.0×1019 cm−3, while the ratio of y to x in the molecular formula can be larger than 2 and smaller than 2.5.
-
-
-
-
-
-
-
-
-
Search Results
11
records
(took 0.015 seconds)
