公开(公告)号：US20230193462A1

公开(公告)日：2023-06-22

申请号：US18082215

申请日：2022-12-15

Applicant: ENTEGRIS, INC.

Inventor： MinSeok Ryu ,  SangJin Lee ,  SeongCheol Kim ,  YeRim Yeon ,  YoonHae Kim ,  KieJin Park

IPC: C23C16/455 ,  C23C16/513

CPC classification number: C23C16/45553 ,  C23C16/513

Abstract: Some embodiments relate to a precursor comprising a precursor for vapor deposition. The precursor comprises an aliphatic hydrocarbon and at least one disilylamine group. The at least one disilylamine group is attached to the aliphatic hydrocarbon. The at least one disilylamine group does not comprise a silanide group. Some embodiments relate to a method for making the precursor. The method comprises reacting a polyamine compound and a silylhalide compound in a presence of a base to form a precursor useful for vapor deposition. Some embodiments relate to a method for forming a silicon-containing film using the precursor.

公开(公告)号：US20230080718A1

公开(公告)日：2023-03-16

申请号：US17859953

申请日：2022-07-07

Applicant: ENTEGRIS, INC.

Inventor： YoonHae Kim ,  Sungsil Cho ,  HwanSoo Kim ,  KieJin Park

IPC: C01B33/027 ,  C01B33/08 ,  C07F7/02 ,  C07F7/18 ,  C23C16/40 ,  C23C16/34

Abstract: Some embodiments relate to a method for depositing a silicon precursor on a substrate. The method comprises obtaining a silicon precursor material comprising at least one siloxane linkage, and obtaining at least one co-reactant precursor material. The silicon precursor material is volatized to obtain a silicon precursor vapor. The at least one co-reactant precursor material is volatized to obtain at least one co-reactant precursor vapor. The silicon precursor vapor and the at least one co-reactant precursor vapor are contacted with the substrate, under chemical vapor deposition conditions, sufficient to form a silicon-containing film on a surface of the substrate. Some embodiments relate to silicon precursor materials for chemical vapor deposition.

公开(公告)号：US20240308856A1

公开(公告)日：2024-09-19

申请号：US18674531

申请日：2024-05-24

Applicant: ENTEGRIS, INC.

Inventor： YoonHae Kim ,  Sungsil Cho ,  HwanSoo Kim ,  KieJin Park

IPC: C01B33/027 ,  C01B33/08 ,  C07C7/00 ,  C07F7/02 ,  C07F7/18 ,  C23C16/34 ,  C23C16/40

CPC classification number: C01B33/027 ,  C01B33/08 ,  C07C7/00 ,  C07F7/025 ,  C07F7/18 ,  C23C16/345 ,  C23C16/401

Abstract: Some embodiments relate to a method for depositing a silicon precursor on a substrate. The method comprises obtaining a silicon precursor material comprising at least one siloxane linkage, and obtaining at least one co-reactant precursor material. The silicon precursor material is volatized to obtain a silicon precursor vapor. The at least one co-reactant precursor material is volatized to obtain at least one co-reactant precursor vapor. The silicon precursor vapor and the at least one co-reactant precursor vapor are contacted with the substrate, under chemical vapor deposition conditions, sufficient to form a silicon-containing film on a surface of the substrate. Some embodiments relate to silicon precursor materials for chemical vapor deposition.

公开(公告)号：US20230088079A1

公开(公告)日：2023-03-23

申请号：US17860177

申请日：2022-07-08

Applicant: ENTEGRIS, INC.

Inventor： SangJin Lee ,  MinSeok Ryu ,  Sangbum Han ,  SeongCheol Kim ,  YoonHae Kim ,  KieJin Park ,  YeRim Yeon ,  Sungsil Cho ,  HwanSoo Kim ,  JoongKi CHOI

IPC: C07F7/10 ,  H01L21/02 ,  C23C16/455

Abstract: Provided are certain silyl amine compounds useful as precursors in the vapor deposition of silicon-containing materials onto the surfaces of microelectronic devices. Such precursors can be utilized with optional co-reactants to deposit silicon-containing films such as silicon nitride, silicon oxide, silicon oxynitride, silicon oxycarbonitride (SiOCN), silicon carbonitride (SiCN), and silicon carbide.