公开(公告)号：US5449545A

公开(公告)日：1995-09-12

申请号：US006856

申请日：1993-01-21

申请人： Eiichi Toya ,  Yukio Itoh ,  Takashi Tanaka ,  Yasumi Sasaki

发明人： Eiichi Toya ,  Yukio Itoh ,  Takashi Tanaka ,  Yasumi Sasaki

IPC分类号： G03F1/22 ,  G03F1/60 ,  H01L21/027 ,  G03F9/00

CPC分类号： G03F1/22 ,  Y10T428/24322 ,  Y10T428/24331 ,  Y10T428/24355 ,  Y10T428/24917 ,  Y10T428/265 ,  Y10T428/30

摘要： A ceramic device is disclosed that has a silicon base plate, a first ceramic film formed on a first surface of the silicon base plate, a second ceramic film formed on a second surface of the silicon base plate opposite to the first surface, and an operation opening formed in the silicon base plate between the first and second surfaces. A surface portion of the first ceramic film exposed to the operation opening Is a mirror surface having 0.05 micrometers or less of center line average height Ra. A mirror surface keeping film can be formed between the first surface of the silicon base plate and the first ceramic film for keeping a mirror surface in an etching step to etch the silicon base plate, and the silicon base plate can be reduced partially in the etching step for forming an operation opening thereby exposing a corresponding portion of the mirror surface keeping film to the operation opening.

摘要翻译： 公开了一种陶瓷器件，其具有硅基板，形成在硅基板的第一表面上的第一陶瓷膜，形成在与第一表面相对的硅基板的第二表面上的第二陶瓷膜，以及操作 开口形成在第一和第二表面之间的硅基板中。 暴露于操作开口的第一陶瓷膜的表面部分是具有0.05微米或更小的中心线平均高度Ra的镜面。 在蚀刻步骤中，在硅基板的第一表面和第一陶瓷膜之间可以形成镜面保持膜，用于在蚀刻步骤中保持镜面，以蚀刻硅基板，并且可以在蚀刻中部分地减少硅基板 用于形成操作开口的步骤，从而将镜面保持膜的相应部分暴露于操作开口。

公开(公告)号：US5074017A

公开(公告)日：1991-12-24

申请号：US454782

申请日：1989-12-26

申请人： Eiichi Toya ,  Yukio Itoh ,  Tadashi Ohashi ,  Masayuki Sumiya ,  Yasumi Sasaki

发明人： Eiichi Toya ,  Yukio Itoh ,  Tadashi Ohashi ,  Masayuki Sumiya ,  Yasumi Sasaki

IPC分类号： C30B25/12 ,  C23C16/44 ,  C23C16/458 ,  H01L21/205 ,  H01L21/31

CPC分类号： C23C16/4584 ,  Y10T29/41

摘要： A susceptor for use in a vertical vapor growth apparatus includes a susceptor body (12) having an upper surface, a plurality of wafer receiving portions (17) formed in the upper surface of the susceptor body (12), and plates (16) fixed in the upper surface of the susceptor body (12) near the wafer setting portions (17). The plates (16) have an upper surface such that, when wafers (5) are mounted in the wafer setting portions (17), the upper surfaces of the plates (16) and the wafers (5) are positioned substantially in the same plane. The plates (16) are made of quartz glass or fused silica.

摘要翻译： 用于垂直气相生长装置的基座包括具有上表面的基座体（12），形成在基座体（12）的上表面中的多个晶片接收部分（17），以及固定 在靠近晶片设置部分（17）的基座主体（12）的上表面中。 板（16）具有上表面，使得当晶片（5）安装在晶片设置部分（17）中时，板（16）和晶片（5）的上表面基本上位于同一平面 。 板（16）由石英玻璃或熔融石英制成。

公开(公告)号：US5178727A

公开(公告)日：1993-01-12

申请号：US831752

申请日：1992-02-10

申请人： Eiichi Toya ,  Yukio Itoh ,  Tadashi Ohashi ,  Masayuki Sumiya

发明人： Eiichi Toya ,  Yukio Itoh ,  Tadashi Ohashi ,  Masayuki Sumiya

IPC分类号： G03F1/22

CPC分类号： G03F1/22 ,  Y10T428/24322

摘要： A ceramic membrane device for a photomask is a ring-shaped base plate constituting a circumferential frame and having a flat front surface, an outer side surface and a rear surface, a front CVD coating supported on the front surface of the base plate and defining a flat surface on which a masking pattern is to be formed, and a rear CVD coating formed on the rear surface of the base plate. The front and rear CVD coatings are made of a silicon compound. The ceramic membrane device is made by providing a plate having a flat front surface, a side surface and a rear surface, forming a front CVD coating made of a silicon compound on the side surface and the front surface of the plate, forming a rear CVD coating made of a silicon compound on a partial area of the rear surface of the plate so that an uncoated area remains, removing the portion of the plate corresponding to the uncoated area by means of etching so that the remaining portion of the plate can function as a circumferential frame for the ceramic membrane formed by the front coating.

摘要翻译： 一种用于光掩模的陶瓷膜装置是构成圆周框架并具有平坦的前表面，外侧表面和后表面的环形基板，支撑在基板的前表面上的前CVD涂层， 要形成掩模图案的平坦表面和形成在基板的后表面上的后CVD涂层。 前后CVD涂层由硅化合物制成。 陶瓷膜装置通过提供具有平坦的前表面，侧表面和后表面的板制成，在板的侧表面和前表面上形成由硅化合物制成的前CVD涂层，形成后CVD 由硅化合物制成的涂层在板的后表面的局部区域上，使得未涂覆区域残留，通过蚀刻去除对应于未涂覆区域的板的部分，使得板的剩余部分可以作为 由前涂层形成的用于陶瓷膜的圆周框架。

公开(公告)号：US06452222B1

公开(公告)日：2002-09-17

申请号：US09458510

申请日：1999-12-13

申请人： Yukio Itoh

发明人： Yukio Itoh

IPC分类号： H01L2976

CPC分类号： H01L29/7816 ,  H01L29/0696 ,  H01L29/1083 ,  H01L29/41758 ,  H01L29/41775 ,  H01L29/42368 ,  H01L29/66681

摘要： A horizontal type DMISFET is remarkably improved in its endurance of an over-voltage applied to a drain electrode thereof. In this MIS type semiconductor device, an N+-type source region assuming an octagonal-shaped configuration in plan view is selectively formed in a first P-type base region in a manner such that the N+-type source region is disposed adjacent to a peripheral portion of a P+-type base region, provided that the N+-type source region is not disposed on a center line through which a center of an N+-type drain region is connected with a center of the first P-type base region.

摘要翻译： 在施加到其漏电极的过电压的耐久性方面，水平型DMISFET显着提高。 在这种MIS型半导体器件中，在第一P型基极区域中选择性地形成在平面图中呈现八角形形状的N +型源极区域，使得N +型源极区域与周边 只要N +型源极区域不配置在N +型漏极区域的中心与第一P型基极区域的中心连接的中心线上，则P +型基极区域的部分。

公开(公告)号：US4581666A

公开(公告)日：1986-04-08

申请号：US379425

申请日：1982-05-18

申请人： Yukio Itoh

发明人： Yukio Itoh

IPC分类号： G11B15/44

CPC分类号： G11B15/442

摘要： A mechanism for fast-forwarding/rewinding operations in which an intermittent gear driven by a motor is used for actuating a control member for advancing and releasing one or more of a head, pinch roller and idler for tape reproduction against the force of an elastic member while a lock means can lock the control member in the reproducing mode, the locked condition by the lock means being released by operation of one or both of the operation levers for fast-forwarding and rewinding operations.

摘要翻译： 一种用于快进/倒带操作的机构，其中由马达驱动的间歇齿轮用于致动用于前进和释放头部，夹送辊和惰轮中的一个或多个的控制构件，以抵抗弹性构件的力 而锁定装置可以在再现模式下锁定控制构件，锁定装置的锁定状态由用于快进和倒带操作的一个或两个操作杆的操作而被释放。

公开(公告)号：US06373110B2

公开(公告)日：2002-04-16

申请号：US09789672

申请日：2001-02-21

申请人： Yukio Itoh ,  Takao Arai

发明人： Yukio Itoh ,  Takao Arai

IPC分类号： H01L2972

CPC分类号： H01L29/7816 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/42368 ,  H01L29/66681

摘要： A power field effect transistor includes a bulge portion and/or a constricted portion in at least one of the heavily doped drain contact region and the lightly doped channel forming region, and heavily doped source regions are formed in the lightly doped channel forming region at intervals, wherein the avalanche breakdown takes place at the bulge portion and/or the constricted portion due to the concentration of electric field in the presence of excess voltage applied to the heavily doped drain contact region, and the breakdown current flows through the gaps between the heavily doped source regions so that a emitter-base junction of a parasitic bipolar transistor is not strongly biased.

摘要翻译： 功率场效应晶体管包括在重掺杂漏极接触区域和轻掺杂沟道形成区域中的至少一个中的凸起部分和/或收缩部分，并且重掺杂源极区域以间隔形成在轻掺杂沟道形成区域中 ，其中由于在施加到重掺杂的漏极接触区域的过电压的存在下由于电场的浓度而在凸起部分和/或收缩部分处发生雪崩击穿，并且击穿电流流过重度掺杂的漏极接触区域之间的间隙 掺杂源极区，使得寄生双极晶体管的发射极 - 基极结不被强烈偏置。

公开(公告)号：USD394299S

公开(公告)日：1998-05-12

申请号：US056169

申请日：1996-06-25

申请人： Takeo Miyazaki ,  Yukio Itoh

设计人： Takeo Miyazaki ,  Yukio Itoh

公开(公告)号：USD401665S

公开(公告)日：1998-11-24

申请号：US76979

申请日：1997-09-22

申请人： Takashi Kondoh ,  Yukio Itoh ,  Shigeo Mimura

设计人： Takashi Kondoh ,  Yukio Itoh ,  Shigeo Mimura

公开(公告)号：US4519269A

公开(公告)日：1985-05-28

申请号：US387909

申请日：1982-06-11

申请人： Yukio Itoh ,  Kazuki Takai ,  Satoshi Takagi

发明人： Yukio Itoh ,  Kazuki Takai ,  Satoshi Takagi

IPC分类号： G11B15/10 ,  G11B5/54 ,  G11B21/22

CPC分类号： G11B15/10 ,  Y10T74/20238

摘要： A transmission system in a cam mechanism having a cam and a driven member to be driven by the cam which comprises an electromagnetic plunger and a control member for having said driven member be driven by said cam while said electromagnetic plunger is energized and releasing said driven member from driving force of said cam when said electromagnetic plunger is deenergized.

摘要翻译： 一种凸轮机构中的传动系统，其具有凸轮和被凸轮驱动的从动构件，所述凸轮和被驱动构件由所述凸轮驱动，所述凸轮包括电磁柱塞和用于使所述从动构件由所述凸轮驱动的控制构件，同时所述电磁柱塞通电并释放所述从动构件 当所述电磁柱塞被断电时从所述凸轮的驱动力。

公开(公告)号：US4475020A

公开(公告)日：1984-10-02

申请号：US385363

申请日：1982-06-07

申请人： Kazuki Takai ,  Yasuo Yamada ,  Satoshi Takagi ,  Yukio Itoh

发明人： Kazuki Takai ,  Yasuo Yamada ,  Satoshi Takagi ,  Yukio Itoh

IPC分类号： H01H3/16 ,  H01H15/20

CPC分类号： H01H3/166

摘要： An operating device for switching a slide switch by moving a slide member of the slide switch in response to movement of an operating member includes an acting member which is provided on the operating member, is engageable with the slide member, and is movable against elastic force of an elastic member. The elastic force is slightly larger than the force necessary for slidable movement of the slide member and the stroke of the operating member is larger than that of the slide member.

摘要翻译： 用于通过移动滑动开关的滑动构件以响应于操作构件的移动来切换滑动开关的操作装置包括设置在操作构件上的作用构件，其可与滑动构件接合，并且能够抵抗弹性力 的弹性构件。 弹性力略大于滑动构件的滑动运动所需的力，并且操作构件的行程大于滑动构件的行程。